Integrated circuit fabrication method with buried oxide isolation

Claim 2

An integrated circuit fabrication method, comprising the steps of: (a.) providing substantially monolithic semiconductor material having an upper surface; (b.) selectively forming a buried dielectric layer beneath said upper surface and underlying first, but not second, monocrystalline portions of said semiconductor material; (c.) introducing dopants of a first conductivity type into said first monocrystalline portions to form source and drain regions of field effect transistors of a first conductivity type in said first monocrystalline portions, said source and drain regions extending entirely through said first monocrystalline portions to abut said buried dielectric layer; and (d.) introducing dopants of a second conductivity type into said second monocrystalline portions to form source and drain regions of field effect transistors of a second conductivity type in said second monocrystalline portions.

Claim 3

The method of claim 1, wherein said buried dielectric layer is formed by implantation of an oxidizing species followed by annealing.

Claim 4

The method of claim 1, wherein said buried dielectric is a buried oxide.

Claim 5

The method of claim 1, wherein said first conductivity type is P type and said second conductivity type is N type, whereby PMOS field effect transistors are formed in said first monocrystalline portions and NMOS transistors are formed in said second monocrystalline portions.

Claim 6

The method of claim 1, wherein said semiconductor material is silicon.

Claim 7

The method of claim 1, wherein all said transistors are insulated-gate field-effect transistors.

Claim 8

The method of claim 2 wherein said implanting step uses an ion implantation energy of at least about 100 keV.

Claim 9

The method of claim 1, wherein said semiconductor material is silicon, and said buried dielectric is a buried layer of silicon oxide.

Claim 10

The method of claim 1, further comprising the additional step, after said step (b.), of forming field dielectric regions to separate portions of said semiconductor material, wherein said field dielectric regions define active areas of said semiconductor material therebetween; said field dielectric regions extending down into said semiconductor material at least to the depth of said buried dielectric later; and wherein the portion of the monolithic semiconductor material immediately beneath said buried dielectric layer is entirely of the first conductivity type.

Claim 11

An integrated circuit fabrication method, comprising the steps of: (a.) providing substantially monolithic semiconductor material; (b.) masking a portion of said semiconductor material, and implanting an unmasked portion of said semiconductor material with an oxidizing species at a dose greater than 10 17 cm -2 ; (c.) annealing said semiconductor material under conditions that cause said oxidizing species to react with said semiconductor material to thereby form a buried dielectric layer; (d.) forming field dielectric regions to separate portions of said semiconductor material, wherein said field dielectric regions define active areas of said semiconductor material therebetween; said field dielectric regions extending down into said semiconductor material at least to the depth of said buried dielectric layer; (e.) forming lateral PMOS transistors with source and drain regions that entirely overlie and extend down to the depth of said buried dielectric layer; and (f.) forming lateral NMOS transistors with source and drain regions in portions of said active areas that do not overlie said buried dielectric layer, wherein pairs of PMOS and NMOS transistors are arranged in common active areas, the drains of each transistor pair being connected at a PN junction above said buried dielectric layer.

Claim 12

An integrated circuit fabrication method, comprising the steps of: (a.) providing substantially monolithic semiconductor material; (b.) masking a portion of said semiconductor material, and implanting an unmasked portion of said semiconductor material with an oxidizing species at a dose greater than 10 17 cm -2 ; (c.) annealing said semiconductor material under conditions that cause said oxidizing species to react with said semiconductor material to thereby form a buried dielectric layer; (d.) forming field dielectric regions to separate portions of said semiconductor material, wherein said field dielectric regions define active areas of said semiconductor material therebetween; said field dielectric regions extending down into said semiconductor material at least to the depth of said buried dielectric layer; (e.) forming lateral PMOS transistors with source and drain regions that entirely overlie and extend down to the depth of said buried dielectric layer; and (f.) forming lateral NMOS transistors with source and drain regions in portions of said active areas that do not overlie said buried dielectric layer, wherein pairs of PMOS and NMOS transistors are arranged in common active areas, the drains of each transistor pair being connected at a PN junction above said buried dielectric layer.

Claim 13

The method of claim 10, wherein all said transistors are self-aligned insulated-gate field-effect transistors.

Claim 14

The method of claim 10, wherein said implanting step uses an ion energy of at least about 100 keV.

Claim 15

The method of claim 10, wherein said masking step uses at least one patterned inorganic masking layer.

Claim 16

The method of claim 10, wherein said buried dielectric is a buried oxide.

Claim 17

The method of claim 10, wherein said lateral PMOS transistors are each formed in a layer of N type material over said buried dielectric layer, and the source and drain regions of each of said lateral PMOS transistors extend entirely through said layer of N type material to abut said buried dielectric layer.

Claim 18

The method of claim 10, wherein said semiconductor material is silicon.

Claim 19

The method of claim 10, wherein said semiconductor material is silicon, and said buried dielectric is a buried layer of silicon oxide.

Claim 20

An integrated circuit fabrication method, comprising the steps of: (a.) providing substantially monolithic semiconductor material; (b.) masking a portion of said semiconductor material, and implanting an unmasked portion of said semiconductor material with an oxidizing species at a dose greater than 10 17 cm -2 ; (c.) annealing said semiconductor material under conditions that cause said oxidizing species to react with said semiconductor material to thereby form a buried dielectric layer; (d.) forming field dielectric regions to separate portions of said semiconductor material, wherein said field dielectric regions define active areas of said semiconductor material therebetween; said field dielectric regions extending down into said semiconductor material at least to the depth of said buried dielectric layer; (e.) forming first transistors, each having source and drain regions of a first conductivity type, said source and drain regions extending entirely through said monolithic semiconductor material to abut said buried dielectric layer; and (f.) forming second transistors, each having source and drain regions of a second conductivity type, said active areas including pairs of first and second transistors connected to form SRAM memory cells, wherein said first transistor of each pair entirely overlies said buried dielectric layer and said second transistor of each pair is substantially laterally removed from over said buried dielectric layer; wherein at least some drain regions of said second transistors abut drain region regions of said first transistors at ohmic contact locations.

Claim 21

An integrated circuit fabrication method, comprising the steps of: (a.) providing substantially monolithic semiconductor material; (b.) masking a portion of said semiconductor material, and implanting an unmasked portion of said semiconductor material with an oxidizing species at a dose greater than 10 17 cm -2 ; (c.) annealing said semiconductor material under conditions that cause said oxidizing species to react with said semiconductor material to thereby form a buried dielectric layer; (d.) forming field dielectric regions to separate portions of said semiconductor material, wherein said field dielectric regions define active areas of said semiconductor material therebetween; said field dielectric regions extending down into said semiconductor material at least to the depth of said buried dielectric layer; (e.) forming first transistors, each having source and drain regions of a first conductivity type, said source and drain regions extending entirely through said monolithic semiconductor material to abut said buried dielectric layer; and (f.) forming second transistors, each having source and drain regions of a second conductivity type, said active areas including pairs of first and second transistors connected to form SRAM memory cells, wherein said first transistor of each pair entirely overlies said buried dielectric layer and said second transistor of each pair is substantially laterally removed from over said buried dielectric layer; wherein at least some drain regions of said second transistors abut drain region regions of said first transistors at ohmic contact locations.

Claim 22

The method of claim 18, wherein said buried dielectric is a buried oxide.

Claim 23

The method of claim 18, wherein said first conductivity type is P type and said second conductivity type is N type.

Claim 24

The method of claim 18, wherein said semiconductor material is silicon.

Claim 25

The method of claim 18, wherein all said transistors are self-aligned insulated-gate field-effect transistors.

Claim 26

The method of claim 18, wherein said implanting step uses an ion energy of at least about 100 keV.

Claim 27

The method of claim 18, wherein said semiconductor material is silicon, and said buried dielectric is a buried layer of silicon oxide.

Claim 28

The method of claim 18, wherein said first and second transistors of each pair have their drain regions adjoin to form PN junctions above said buried dielectric layer.