Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
231 words
An optical semiconductor device, comprising: (a) a first semiconductor layer; (b) a first insulating layer formed on said first semiconductor layer, said first insulating layer having a different index of refraction from that of said first semiconductor layer; (c) a highly doped, second semiconductor layer having a first conductivity and formed on said first insulating layer; (d) a third semiconductor layer having a first conductivity and formed on said second semiconductor layer; (e) a device isolation region having a depth starting at an upper surface of said third semiconductor layer and terminating at an upper surface of said first insulating layer, said device isolation region defining a device formation region therein, said device formation region being formed with a recess starting at an upper surface of said third semiconductor layer and terminating at an upper surface of said second semiconductor layer; (f) a multi-layered structure formed within said recess, said multi-layered structure having at least a quantum well layer and a contact layer formed on said quantum well layer and having a second conductivity; (g) a connection region having a depth starting at an upper surface of said third semiconductor layer and terminating at an upper surface of said second semiconductor layer; (h) a first electrode formed on and in electrical connection with said connection region; and (i) a second electrode formed on and in electrical connection with said contact layer.
Claim 2
Dependent Claim
231 words
An optical semiconductor device, comprising: (a) a first semiconductor layer; (b) a first insulating layer formed on said first semiconductor layer, said first insulating layer having a different index of refraction from that of said first semiconductor layer; (c) a highly doped, second semiconductor layer having a first conductivity and formed on said first insulating layer; (d) a third semiconductor layer having a first conductivity and formed on said second semiconductor layer; (e) a device isolation region having a depth starting at an upper surface of said third semiconductor layer and terminating at an upper surface of said first insulating layer, said device isolation region defining a device formation region therein, said device formation region being formed with a recess starting at an upper surface of said third semiconductor layer and terminating at an upper surface of said second semiconductor layer; (f) a multi-layered structure formed within said recess, said multi-layered structure having at least a quantum well layer and a contact layer formed on said quantum well layer and having a second conductivity; (g) a connection region having a depth starting at an upper surface of said third semiconductor layer and terminating at an upper surface of said second semiconductor layer; (h) a first electrode formed on and in electrical connection with said connection region; and (i) a second electrode formed on and in electrical connection with said contact layer.
Claim 3
Dependent Claim
42 words
The optical semiconductor device as set forth in claim 1, wherein said first insulating layer has a thickness determined in dependence on reflectance against said second semiconductor layer with respect to a light having a wavelength associated with said quantum well layer.
Claim 4
Dependent Claim
29 words
The optical semiconductor device as set forth in claim 1, wherein said first insulating layer has a thickness in the range of 0.15 μm to 0.30 μm both inclusive.
Claim 5
Dependent Claim
29 words
The optical semiconductor device as set forth in claim 1, wherein said first insulating layer has a thickness in the range of 0.20 μm to 0.25 μm both inclusive.
Claim 6
Dependent Claim
23 words
The optical semiconductor device as set forth in claim 1, wherein said first insulating layer is formed all over said first semiconductor layer.
Claim 7
Dependent Claim
23 words
The optical semiconductor device as set forth in claim 1, wherein said first insulating layer is formed at least below said multi-layered structure.
Claim 8
Dependent Claim
24 words
The optical semiconductor device as set forth in claim 1 further comprising a second insulating layer covering an inner sidewall of said recess therewith.
Claim 9
Dependent Claim
47 words
The optical semiconductor device as set forth in claim 1 further comprising a light-impermeable region having a depth starting at an upper surface of said third semiconductor layer and terminating at an upper surface of said first insulating layer, said light-impermeable region being formed outside said recess.
Claim 10
Dependent Claim
21 words
The optical semiconductor device as set forth in claim 8, wherein said light-impermeable region is formed outside said device formation region.
Claim 11
Dependent Claim
21 words
The optical semiconductor device as set forth in claim 8, wherein said light-impermeable region is formed inside said device formation region.
Claim 12
Dependent Claim
33 words
The optical semiconductor device as set forth in claim 10, wherein said light-impermeable region is made of metal to act as a connection region, in which case said connection region is not formed.
Claim 13
Dependent Claim
19 words
The optical semiconductor device as set forth in claim 11, wherein said light-impermeable region is made of refractory metal.
Claim 14
Dependent Claim
16 words
The optical semiconductor device as set forth in claim 12, wherein said refractory metal is tungsten.
Claim 15
Dependent Claim
32 words
The optical semiconductor device as set forth in claim 1 further comprising a third insulating layer covering a resultant therewith, said first and second electrodes appearing outside through said third insulating layer.
Claim 16
Dependent Claim
29 words
The optical semiconductor device as set forth in claim 14, wherein said third insulating layer has a thickness in the range of 0.15 μm to 0.30 μm both inclusive.
Claim 17
Dependent Claim
29 words
The optical semiconductor device as set forth in claim 15, wherein said third insulating layer has a thickness in the range of 0.20 μm to 0.25 μm both inclusive.