US5792706A
Expired / Lapsed
US
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Interlevel dielectric with air gaps to reduce permitivity
Assignee: GlobalFoundries Inc
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Filing: 1996-06-05
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Granted: 1998-08-11
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Expires: 2016-06-05
Abstract
Abstract A reduced permittivity interlevel dielectric is provided. The interlevel dielectric is formed between two levels of interconnect. The interlevel dielectric comprises a first dielectric layer formed from a TEOS source deposited on a first level interconnect. The first dielectric contains air gaps at spaced intervals across the first dielectric. A second dielectric, preferably from a silane source is deposited upon said first dielectric. A second interconnect level is then placed on the second dielectric.
Inventors
- 👤 Mark W. Michael
- 👤 Robert Dawson
- 👤 Fred N. Hause
- 👤 Basab Bandyopadhyay
- 👤 H. Jim Fulford, Jr.
- 👤 William S. Brennan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:41
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/072; H10W20/40; H10W20/45; H10W20/46; H10W20/495
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
108 words
A method for forming two levels of interconnect upon a semiconductor topography, comprising: depositing a first layer of metal upon the semiconductor topography; removing portions of said first layer of metal to form a spaced set of first conductors; forming a first dielectric upon and between said first conductors; substantially planarizing an upper surface of said first dielectric; removing portions of said first dielectric at spaced intervals across said first dielectric to form trenches, wherein at least a portion of said trenches are formed a spaced distance from said first conductors; and forming a second dielectric upon said first dielectric and a second conductor upon said second dielectric.
Claim 2
Independent Claim
108 words
A method for forming two levels of interconnect upon a semiconductor topography, comprising: depositing a first layer of metal upon the semiconductor topography; removing portions of said first layer of metal to form a spaced set of first conductors; forming a first dielectric upon and between said first conductors; substantially planarizing an upper surface of said first dielectric; removing portions of said first dielectric at spaced intervals across said first dielectric to form trenches, wherein at least a portion of said trenches are formed a spaced distance from said first conductors; and forming a second dielectric upon said first dielectric and a second conductor upon said second dielectric.
Claim 3
Dependent Claim
36 words
The method as recited in claim 1, wherein the step of forming said first dielectric comprises depositing SiO 2 from a TEOS source in a plasma enhanced chemical vapor deposition chamber maintained at approximately 375° C.
Claim 4
Dependent Claim
38 words
The method as recited in claim 1, wherein the step of forming said second dielectric comprises depositing SiO 2 from a silane source in a chemical vapor deposition chamber maintained approximately at atmospheric pressure or below atmospheric pressure.
Claim 5
Dependent Claim
31 words
The method as recited in claim 1, wherein the step of removing portions of said first dielectric comprises selectively etching said first dielectric to a first distance from the semiconductor topography.
Claim 6
Dependent Claim
22 words
The method as recited in claim 4, wherein said first distance is greater than a height of said first layer of interconnect.
Claim 7
Dependent Claim
27 words
The method as recited in claim 1, wherein the step of removing portions of said first dielectric comprises selectively etching said first dielectric to the semiconductor topography.
Claim 8
Dependent Claim
17 words
The method as recited in claim 6, wherein said trenches are laterally displaced from said first conductors.
Claim 9
Dependent Claim
26 words
The method as recited in claim 1, further comprising forming contact openings through said first and second dielectrics to at least one of said first conductors.
Claim 10
Dependent Claim
21 words
The method as recited in claim 8, wherein said contact openings are spaced from the removed portions of said first dielectric.
Claim 11
Dependent Claim
31 words
The method as recited in claim 1, wherein said spaced set of first conductors comprise one level of interconnect, and wherein portions of the second conductor comprise another level of interconnect.
Claim 12
Dependent Claim
62 words
An interlevel dielectric structure, comprising: a plurality of trenches spaced from each other across a first dielectric configured upon and between a set of substantially coplanar first conductors, wherein at least a portion of said trenches are spaced from said first conductors; a second dielectric arranged over said trenches; and a set of substantially coplanar second conductors formed upon said second dielectric.
Claim 13
Dependent Claim
62 words
An interlevel dielectric structure, comprising: a plurality of trenches spaced from each other across a first dielectric configured upon and between a set of substantially coplanar first conductors, wherein at least a portion of said trenches are spaced from said first conductors; a second dielectric arranged over said trenches; and a set of substantially coplanar second conductors formed upon said second dielectric.
Claim 14
Dependent Claim
19 words
The interlevel dielectric as recited in claim 11, further comprising a contact formed through said first and second dielectrics.
Claim 15
Dependent Claim
19 words
The interlevel dielectric as recited in claim 12, wherein said contact is configured a spaced distance from said trenches.
Claim 16
Dependent Claim
24 words
The interlevel dielectric as recited in claim 11, wherein each of said trenches comprise a depth less than the thickness of said first dielectric.
Claim 17
Dependent Claim
25 words
The interlevel dielectric as recited in claim 11, wherein each of said trenches comprise a depth substantially equal to the thickness of said second dielectric.
Claim 18
Independent Claim
79 words
A method for forming an interlevel dielectric structure, comprising: depositing a dielectric upon a set of first conductors arranged within a first elevation level; forming trenches within said dielectric a spaced distance apart such that at least a portion of said trenches are formed a distance from said first conductors; depositing a capping dielectric upon said trenches to cover said trenches and retain a region void of dielectric; and forming a set of second conductors upon said capping dielectric.
Claim 19
Independent Claim
79 words
A method for forming an interlevel dielectric structure, comprising: depositing a dielectric upon a set of first conductors arranged within a first elevation level; forming trenches within said dielectric a spaced distance apart such that at least a portion of said trenches are formed a distance from said first conductors; depositing a capping dielectric upon said trenches to cover said trenches and retain a region void of dielectric; and forming a set of second conductors upon said capping dielectric.
Claim 20
Dependent Claim
30 words
The method as recited in claim 16, wherein said set of first conductors and said set of second conductors each comprise a level of interconnect patterned across a semiconductor wafer.
Claim 21
Dependent Claim
19 words
The method as recited in claim 17, wherein said region void of dielectric extends the thickness of said dielectric.
Claim 22
Dependent Claim
13 words
The method as recited in claim 1, wherein said spaced intervals are equal.
Claim 23
Dependent Claim
18 words
The method as recited in claim 11, wherein said plurality of trenches are spaced an equal distance apart.
References Cited (Backward Citations)
US5407860A
Cited
US5559055A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-10 | 2002-02-09 | 2002-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-10 | 2006-02-09 | 2006-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-10 | 2010-02-09 | 2010-08-11 | $7700.00 | Window Closed / Lapsed |