US5792569A
Expired / Lapsed
US
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Magnetic devices and sensors based on perovskite manganese oxide materials
Assignee: HGST Netherlands BV
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Filing: 1996-03-19
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Granted: 1998-08-11
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Expires: 2016-03-19
Abstract
Abstract A tri-layer thin film magnetoresistive device using doped perovskite manganate thin films as ferromagnetic elements, wherein a current is transported through the tri-layer structure, is disclosed. A large magnetoresistance change of about a factor of two is obtained in a low magnetic field, less than 150 Oe, which is close to the coercivity of the material of the elements. This device demonstrates that low-field spin-dependent transport in the manganates can be accomplished and that the magnitude of the resulting magnetoresistance is suitable for magnetoresistive field sensor applications.
Inventors
- 👤 Jonathan Zanhong Sun
- 👤 Arunava Gupta
- 👤 Gang Xiao
- 👤 Philip Louis Trouilloud
- 👤 Philippe P. Lecoeur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:14
CPC Classifications
B; B82; B82Y; B82Y25/00; H; H10; H10N; H10N50/00; H10N50/10; B82Y10/00; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11C; G11C11/00; G11C11/02; G11C11/16; G11C11/161; G11C11/165; G11C11/1675; H01; H01F; H01F10/00; H01F10/32; H01F10/3213; H10N50/80; H10N50/85; G11B2005/3996; G11B5/332; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10T; Y10T428/00; Y10T428/11; Y10T428/1171
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
110 words
A tri-layer thin film magnetoresistive device comprising: a first or bottom thin film magnetic layer; a second or intermediate layer; a third or top thin film magnetic layer; wherein said second or intermediate layer is one selected from the group comprising a metal and an insulator which disrupts the magnetic exchange coupling between said first and third layers while allowing the passage of electrical current thereacross and wherein at least one of said first or third layers is a doped manganese perovskite and wherein if only one of said first and third layers is a doped perovskite then the other is a ferromagnetic element or compound which exhibits spin polarization.
Claim 2
Dependent Claim
110 words
A tri-layer thin film magnetoresistive device comprising: a first or bottom thin film magnetic layer; a second or intermediate layer; a third or top thin film magnetic layer; wherein said second or intermediate layer is one selected from the group comprising a metal and an insulator which disrupts the magnetic exchange coupling between said first and third layers while allowing the passage of electrical current thereacross and wherein at least one of said first or third layers is a doped manganese perovskite and wherein if only one of said first and third layers is a doped perovskite then the other is a ferromagnetic element or compound which exhibits spin polarization.
Claim 3
Dependent Claim
14 words
The device of claim 1 wherein said second layer is an insulating tunneling barrier.
Claim 4
Dependent Claim
16 words
The device of claim 1 wherein said second layer is the perovskite oxide SrTiO 3 .
Claim 5
Dependent Claim
19 words
The device of claim 1 wherein said first and third layers are LCMO and said second layer is STO.
Claim 6
Dependent Claim
19 words
The device of claim 1 wherein said first and third layers are LSMO and said second layer is STO.
Claim 7
Dependent Claim
15 words
The device of claim 1 wherein said first magnetic layer is situate on a substrate.
Claim 8
Dependent Claim
10 words
The device of claim 6 wherein said substrate is silicon.
Claim 9
Dependent Claim
12 words
The device of claim 6 wherein said substrate is SrTiO 3 .
Claim 10
Dependent Claim
119 words
A tri-layer thin film magnetoresistive device comprising: a first contact electrode; a first or bottom thin film magnetic layer; a second or intermediate layer; a third or top thin film magnetic layer; and a second contact electrode; wherein said second or intermediate layer is one selected from the group comprising a metal and an insulator which disrupts the magnetic exchange coupling between said first and third layers while allowing the passage of electrical current thereacross and wherein at least one of said first or third layers is a doped manganese perovskite and wherein if only one of said first and third layers is a doped perovskite then the other is a ferromagnetic element or compound which exhibits spin polarization.
Claim 11
Dependent Claim
119 words
A tri-layer thin film magnetoresistive device comprising: a first contact electrode; a first or bottom thin film magnetic layer; a second or intermediate layer; a third or top thin film magnetic layer; and a second contact electrode; wherein said second or intermediate layer is one selected from the group comprising a metal and an insulator which disrupts the magnetic exchange coupling between said first and third layers while allowing the passage of electrical current thereacross and wherein at least one of said first or third layers is a doped manganese perovskite and wherein if only one of said first and third layers is a doped perovskite then the other is a ferromagnetic element or compound which exhibits spin polarization.
Claim 12
Dependent Claim
14 words
The device of claim 9 wherein said second layer is an insulating tunneling barrier.
Claim 13
Dependent Claim
16 words
The device of claim 9 wherein said second layer is the perovskite oxide SrTiO 3 .
Claim 14
Dependent Claim
19 words
The device of claim 9 wherein said first and third layers are LCMO and said second layer is STO.
Claim 15
Dependent Claim
19 words
The device of claim 9 wherein said first and third layers are LSMO and said second layer is STO.
Claim 16
Dependent Claim
20 words
The device of claim 9 further including a protective layer inbetween said third magnetic layer and said second contact electrode.
Claim 17
Dependent Claim
15 words
The device of claim 9 wherein said first magnetic layer is situate on a substrate.
Claim 18
Dependent Claim
10 words
The device of claim 9 wherein said substrate is silicon.
Claim 19
Dependent Claim
12 words
The device of claim 9 wherein said substrate is SrTiO 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-10 | 2002-02-09 | 2002-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-10 | 2006-02-09 | 2006-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-10 | 2010-02-09 | 2010-08-11 | $7700.00 | Window Closed / Lapsed |