US5789310A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming shallow junctions by entrapment of interstitial atoms
Assignee: Advanced Micro Devices Inc
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Filing: 1996-12-10
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Granted: 1998-08-04
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Expires: 2016-12-10
Abstract
Abstract In the formation of shallow depth junctions, atoms of inner elements, such as helium, argon, xenon or krypton are implanted at a chosen energy and concentration to create microvoids in the epitaxial layer at a chosen depth. Then, upon implantation of boron ions, the implantation of which creates interstitial silicon atoms, during an anneal step the interstitial atoms fill the voids and determine the junction depth.
Inventors
- 👤 Shekhar Pramanick
- 👤 Igor C. Ivanov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:43
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10P30/208; H10P30/21; H10P30/28
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
92 words
A method of fabricating a source/drain of a semiconductor device comprising: providing a crystalline silicon body; implanting into the silicon body atoms of inert gas, so as to create voids in the silicon body at a chosen depth; implanting boron ions in the silicon body, and creating interstitial silicon atoms in the silicon body; annealing the resulting structure at a temperature equal or less than 500° C., the voids and interstitial silicon atoms acting together so that interstitial silicon atoms are placed in voids to determine the junction depth of the source/drain.
Claim 2
Independent Claim
92 words
A method of fabricating a source/drain of a semiconductor device comprising: providing a crystalline silicon body; implanting into the silicon body atoms of inert gas, so as to create voids in the silicon body at a chosen depth; implanting boron ions in the silicon body, and creating interstitial silicon atoms in the silicon body; annealing the resulting structure at a temperature equal or less than 500° C., the voids and interstitial silicon atoms acting together so that interstitial silicon atoms are placed in voids to determine the junction depth of the source/drain.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein said inert gas atoms comprise argon atoms.
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein said inert gas atoms comprise Helium atoms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-03 | 2002-02-02 | 2002-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-03 | 2006-02-02 | 2006-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-03 | 2010-02-02 | 2010-08-04 | $7700.00 | Window Closed / Lapsed |