US5787104A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor light emitting element and method for fabricating the same
Assignee: Panasonic Corp
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Filing: 1996-01-19
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Granted: 1998-07-28
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Expires: 2016-01-19
Abstract
Abstract The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
Inventors
- 👤 Satoshi Kamiyama
- 👤 Masakatsu Suzuki
- 👤 Takeshi Uenoyama
- 👤 Kiyoshi Ohnaka
- 👤 Akira Takamori
- 👤 Masaya Mannoh
- 👤 Isao Kidoguchi
- 👤 Hideto Adachi
- 👤 Akihiko Ishibashi
- 👤 Toshiya Fukuhisa
- 👤 Yasuhito Kumabuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:53
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2201; H01S5/30; H01S5/34; H01S5/343; H01S5/34333; H01S2301/00; H01S2301/17; H01S2301/173; H01S2304/00; H01S2304/04; H01S2304/12; H01S5/02; H01S5/0206; H01S5/0207; H01S5/0213; H01S5/022; H01S5/0235; H01S5/02355; H01S5/0237; H01S5/2054; H01S5/2059; H01S5/2068; H01S5/223; H01S5/2232; H01S5/2237; H01S5/24; H01S5/32; H01S5/3201; H01S5/3202; H01S5/320225; H01S5/3203; H01S5/323; H01S5/32308; H01S5/32341; H01S5/3403; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/817; H10H20/822; H10H20/824; H10H20/825; Y; Y10; Y10S; Y10S257/00; Y10S257/918; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
36 words
A semiconductor laser comprising an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
Claim 2
Dependent Claim
36 words
A semiconductor laser comprising an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
Claim 3
Independent Claim
41 words
A method for fabricating a semiconductor laser comprising the step of forming an active layer made of a hexagonal-system compound semiconductor in a c-axis direction, wherein the active layer is formed so that anisotropic strain is generated in a c plane.
Claim 4
Independent Claim
41 words
A method for fabricating a semiconductor laser comprising the step of forming an active layer made of a hexagonal-system compound semiconductor in a c-axis direction, wherein the active layer is formed so that anisotropic strain is generated in a c plane.
Claim 5
Dependent Claim
17 words
A semiconductor laser according to claim 1, wherein the hexagonal-system compound semiconductor is of a wurtzite type.
Claim 6
Dependent Claim
17 words
A semiconductor laser according to claim 1, wherein the hexagonal-system compound semiconductor is of a 4H type.
Claim 7
Dependent Claim
17 words
A semiconductor laser according to claim 1, wherein the hexagonal-system compound semiconductor is of a 6H type.
Claim 8
Dependent Claim
14 words
A semiconductor laser according to claim 1, wherein the anisotropic strain is uniaxial strain.
Claim 9
Dependent Claim
14 words
A semiconductor laser according to claim 1, wherein the anisotropic strain is shearing strain.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-27 | 2002-01-26 | 2002-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-27 | 2006-01-26 | 2006-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-27 | 2010-01-26 | 2010-07-28 | $7700.00 | Window Closed / Lapsed |