US5774327A
Expired / Lapsed
US
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High dielectric capacitors
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-11-27
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Granted: 1998-06-30
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Expires: 2016-11-27
Abstract
Abstract Capacitors and methods of fabricating high dielectric capacitors which do not create a step difference where the high dielectric material is formed are provided. These methods include forming a first electrode layer on an integrated circuit device substrate and a layer of high dielectric material on the first electrode layer opposite the integrated circuit device substrate. A second electrode layer is formed on the layer of high dielectric material opposite the first electrode layer. The first electrode layer, the high dielectric layer and the second electrode layer are patterned to form a capacitor cell unit having a sidewall which extends from the first electrode beyond the layer of high dielectric material and to the second electrode layer. An insulating spacer is formed on the sidewall of the capacitor cell unit extending from the first electrode layer to the second electrode layer.
Inventors
- 👤 Soon-oh Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 04:19
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
131 words
A high dielectric capacitor comprising: an integrated circuit substrate; a first electrode layer on the integrated circuit substrate; a layer of high dielectric material on the first electrode layer opposite the integrated circuit substrate; a second electrode layer on the layer of high dielectric material opposite the first electrode layer; wherein said first electrode layer, said high dielectric layer and said second electrode layer define a capacitor cell unit having a continuous sidewall which extends from the first electrode layer beyond the layer of high dielectric material and to the second electrode layer; and an insulating spacer on said sidewall and extending at least from the first electrode layer to the second electrode layer and ending before a surface of the second electrode layer opposite the layer of high dielectric material.
Claim 2
Dependent Claim
131 words
A high dielectric capacitor comprising: an integrated circuit substrate; a first electrode layer on the integrated circuit substrate; a layer of high dielectric material on the first electrode layer opposite the integrated circuit substrate; a second electrode layer on the layer of high dielectric material opposite the first electrode layer; wherein said first electrode layer, said high dielectric layer and said second electrode layer define a capacitor cell unit having a continuous sidewall which extends from the first electrode layer beyond the layer of high dielectric material and to the second electrode layer; and an insulating spacer on said sidewall and extending at least from the first electrode layer to the second electrode layer and ending before a surface of the second electrode layer opposite the layer of high dielectric material.
Claim 3
Dependent Claim
40 words
A high dielectric capacitor according to claim 1, further comprising: a diffusion barrier layer formed between said integrated circuit substrate and said first electrode layer; and wherein said sidewalls of said capacitor cell unit extend to said diffusion barrier layer.
Claim 4
Dependent Claim
29 words
A high dielectric capacitor according to claim 2, wherein said diffusion barrier layer is formed of a material selected from the group consisting of TiN and RnO 2 .
Claim 5
Dependent Claim
33 words
A high dielectric capacitor according to claim 1, further comprising a third electrode formed on said second electrode layer of said unit cell and extending onto the sidewall of said second electrode layer.
Claim 6
Dependent Claim
19 words
A high dielectric capacitor according to claim 1, wherein said first electrode layer is formed of an oxidation-resistant material.
Claim 7
Dependent Claim
43 words
A high dielectric capacitor according to claim 1, wherein said layer of high dielectric material is formed of a material selected from the group consisting of BaTiO 3 , PbTiO 3 , SrTiO 3 , Pb(Zr, Ti)O 3 and (Ba, Sr)TiO 3 .
References Cited (Backward Citations)
US5382817A
Cited
US5559733A
Cited
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