US5773345A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical link amplifier and a wavelength multiplex laser oscillator
Assignee: Fujifilm Business Innovation Corp
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Filing: 1995-04-07
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Granted: 1998-06-30
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Expires: 2015-04-07
Abstract
Abstract The present invention provides an optical link amplifier which reduces the attenuation of the optical signal passing through optical an link amplifier so as to have a fail-safe function to ensure the communication path of an optical signal even if abnormality occurs at an optical amplifier, and an wavelength multiplex laser oscillator in which the spectrum width of the laser beam is narrow and coupling coefficient with an optical fiber is increased.
Inventors
- 👤 Takeshi Ota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:56
CPC Classifications
H; H04; H04B; H04B10/00; H04B10/27; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/125; G02B6/24; G02B6/26; G02B6/28; G02B6/2804; G02B6/42; G02B6/4201; G02B6/4246; G02B6/4249; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4062; H04B10/11; H04B10/118; H04B10/272; G02B2006/12133; G02B2006/1215; H01S5/0268; H01S5/4087; Y; Y10; Y10S; Y10S117/00; Y10S117/918
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
61 words
A method of manufacturing a monolithic wavelength multiplex laser oscillator comprising the steps of: forming a semiconductor laser active layer on a substrate; forming an optical waveguide by mixed-crystallizing a part of said semiconductor laser active layer; and forming a diffraction grating by removing a part of the region of said semiconductor laser active layer into which a impurity is diffused.
Claim 2
Independent Claim
61 words
A method of manufacturing a monolithic wavelength multiplex laser oscillator comprising the steps of: forming a semiconductor laser active layer on a substrate; forming an optical waveguide by mixed-crystallizing a part of said semiconductor laser active layer; and forming a diffraction grating by removing a part of the region of said semiconductor laser active layer into which a impurity is diffused.
Claim 3
Dependent Claim
24 words
A method of manufacturing a monolithic wavelength multiplex laser oscillator according to claim 1, in which the semiconductor laser active layer comprises Al-Ga-As material.
Claim 4
Dependent Claim
25 words
A method of manufacturing a monolithic wavelength multiplex laser oscillator according to claim 1, in which said mixed-crystallization is carried out by diffusing said impurity.
Claim 5
Dependent Claim
25 words
A method of manufacturing a monolithic wavelength multiplex laser oscillator according to claim 1, in which said removal operation is carried out by etching process.
Claim 6
Dependent Claim
22 words
A method of manufacturing a monolithic wavelength laser oscillator according to claim 1, wherein the optical waveguide is a slab optical waveguide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-29 | 2001-12-29 | 2002-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-29 | 2005-12-29 | 2006-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-29 | 2009-12-29 | 2010-06-30 | $7700.00 | Window Closed / Lapsed |