US5770260A
Expired / Lapsed
US
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Process for forming silicon dioxide film
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1997-06-30
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Granted: 1998-06-23
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Expires: 2017-06-30
Abstract
Abstract A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O 2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.
Inventors
- 👤 Shun-ichi Fukuyama
- 👤 Daitei Shin
- 👤 Yuki Komatsu
- 👤 Hideki Harada
- 👤 Yoshihiro Nakata
- 👤 Michiko Kobayashi
- 👤 Yoshiyuki Okura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 19:29
CPC Classifications
C; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/122; C23C18/1208; C23C18/1212; C23C18/125; C23C18/1283; C23C18/1295; C23C18/14; C23C18/143; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6534; H10P14/6536; H10P14/6538; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
41 words
A process for forming a silicon dioxide film comprising applying a mixture of polysilazane and a compound containing a phenolic hydroxyl group on a base to form a coated film, and converting the resulting coated film to said silicon dioxide film.
Claim 2
Dependent Claim
41 words
A process for forming a silicon dioxide film comprising applying a mixture of polysilazane and a compound containing a phenolic hydroxyl group on a base to form a coated film, and converting the resulting coated film to said silicon dioxide film.
Claim 3
Dependent Claim
33 words
A process according to claim 1, wherein the conversion of the coated film to said silicon dioxide film is carried out by subjecting said coated film to heat treatment in an oxidizing atmosphere.
Claim 4
Dependent Claim
16 words
A process according to claim 2, wherein said oxidizing atmosphere is an oxygen-containing or steam-containing atmospheres.
Claim 5
Dependent Claim
42 words
A process according to claim 2, wherein heat treatment for drying a solvent in said coated film and/or for melting and flattening said coated film is carried out before said heat treatment for converting said coated film to said silicon dioxide film.
Claim 6
Dependent Claim
51 words
A process according to claim 4, wherein said coated film is subjected to water absorption treatment before said heat treatment for converting said coated film to said silicon dioxide film and after said heat treatment for drying said solvent in said coated film and/or for melting and flattening said coated film.
Claim 7
Dependent Claim
34 words
A process according to claim 4, wherein said heat treatment for drying said solvent in said coated film and/or for melting and flattening said coated film is carried out under irradiation with ultraviolet rays.
Claim 8
Dependent Claim
18 words
A process according to claim 1, wherein said silicon dioxide film is further subjected to oxygen plasma treatment.
References Cited (Backward Citations)
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