US5769951A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
Assignee: Novellus Systems Inc
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Filing: 1996-01-17
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Granted: 1998-06-23
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Expires: 2016-01-17
Abstract
Abstract A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.
Inventors
- 👤 Everhardus P. van de Ven
- 👤 Eliot K. Broadbent
- 👤 Jeffrey C. Benzing
- 👤 Barry L. Chin
- 👤 Christopher W. Burkhart
- 👤 Lawrence C. Lane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:22
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45519; C23C16/04; C23C16/45521; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4585; C23C16/4586; C23C16/54; H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0431; H10P72/0434; H10P72/70; H10P72/76; H10P72/7604; H10P72/7611; H10P72/7618; H10P72/7621; H10P72/7624; H10P72/78
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
142 words
A method for chemical vapor deposition, comprising: providing a platen in a chemical deposition chamber, said platen having a substantially planar upper surface; securing a wafer to said planar upper surface; aligning an exclusion body disposed in the chamber with the platen such that a protecting portion of the exclusion body projects over a frontside peripheral region of the wafer, said protecting portion being uniformly spaced from said frontside peripheral region so as to form a restrictive passage connecting a first volume of the chamber proximate the wafer frontside deposition surface to a second volume proximate the wafer edge, said restrictive passage extending along an entire periphery of the wafer; providing a process gas to the first volume; and providing a deposition control gas to the second volume at a pressure equal to or greater than the pressure of the process gas.
Claim 2
Independent Claim
142 words
A method for chemical vapor deposition, comprising: providing a platen in a chemical deposition chamber, said platen having a substantially planar upper surface; securing a wafer to said planar upper surface; aligning an exclusion body disposed in the chamber with the platen such that a protecting portion of the exclusion body projects over a frontside peripheral region of the wafer, said protecting portion being uniformly spaced from said frontside peripheral region so as to form a restrictive passage connecting a first volume of the chamber proximate the wafer frontside deposition surface to a second volume proximate the wafer edge, said restrictive passage extending along an entire periphery of the wafer; providing a process gas to the first volume; and providing a deposition control gas to the second volume at a pressure equal to or greater than the pressure of the process gas.
Claim 3
Dependent Claim
28 words
A method as in claim 1, wherein said step of aligning comprises positioning said exclusion body such that said projecting portion does not contact said frontside peripheral region.
Claim 4
Dependent Claim
33 words
A method as in claim 1 further comprising venting a gas uniformly around the first volume to create a venturi effect that draws the process gas toward the projecting portion during wafer processing.
Claim 5
Dependent Claim
19 words
A method as in claim 3 wherein the venting gas is the same gas as the deposition control gas.
Claim 6
Dependent Claim
25 words
A method as in claim 4 wherein said step of venting comprises venting said venting gas through a plurality of orifices in said exclusion body.
Claim 7
Dependent Claim
45 words
A method as in claim 5 wherein said step of venting comprises venting approximately 99% of total flow of said deposition control gas through said plurality of orifices, a remaining approximately 1% of said total flow of deposition control gas passing through said restrictive opening.
Claim 8
Dependent Claim
58 words
A method as in claim 1 wherein a width of the restrictive passage, measured vertically between said projecting portion and said frontside peripheral region, is greater than or equal to a minimum dimension approximately equal to the wafer thickness tolerance and less than or equal to a maximum dimension approximately equal to three times the wafer thickness tolerance.
Claim 9
Dependent Claim
25 words
A method as in claim 1 wherein said step of securing a wafer to said planar upper surface comprises securing said wafer with a vacuum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-22 | 2001-12-22 | 2002-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-22 | 2005-12-22 | 2006-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-22 | 2009-12-22 | 2010-06-23 | $7700.00 | Window Closed / Lapsed |