US5766988A
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Fabricating method for a thin film transistor with a negatively sloped gate
Assignee: SK Hynix Inc
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Filing: 1996-08-02
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Granted: 1998-06-16
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Expires: 2016-08-02
Abstract
Abstract A thin film transistor and a fabricating method for a thin film transistor is disclosed which may be suitable for memory cells of a static random access memory (SRAM) or other devices. A thin film transistor according to this invention may include an insulation substrate, a gate electrode formed to have a negative slope at one side thereof on the insulation substrate, an insulation film side wall formed at the other side of the gate electrode, a gate insulation film formed on the insulation substrate, gate electrode and side wall, a semiconductor layer formed on the gate insulation film, impurity diffusion regions selectively formed within the semiconductor layer over the gate electrode, the side wall and the insulation substrate on the other side of the gate electrode, and a channel region formed within the semiconductor layer at the side of the gate electrode having the negative slope. A method for fabricating a thin film transistor in accordance with this invention may include processes for forming a gate electrode on an insulation substrate, forming a side wall at a side of the gate electrode, etching the other side of the gate electrode selectively to have a negative slope, depositing a gate insulation film and a semiconductor layer successively on the overall surface, forming a source and a drain regions by an vertical ion injunction. Transistors having a negative slope at both sides of the gate electrode also are disclosed.
Inventors
- 👤 Seok Won Cho
- 👤 Jong Moon Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6757; H10B; H10B10/00; H10B10/12; H10B10/125; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0318; H10D30/0321; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6717; H10D30/6728; H10D30/6729; H10D30/673; H10D30/6732
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
123 words
A method for fabricating a thin film transistor comprising the steps of: forming a conduction layer on an insulation substrate; forming a first side of a gate electrode by patterning the conduction layer; forming an insulation film side wall at the first side of the gate electrode; forming a second side of the gate electrode by etching the conduction layer, wherein the second side of the gate electrode has a negative slope; and forming an insulation film and a semiconductor layer on the gate electrode; and injecting impurity ions into the semiconductor layer, wherein a channel region is formed at the second side of the gate electrode, and source and drain regions are formed in the semiconductor layer adjacent to the channel region.
Claim 2
Independent Claim
123 words
A method for fabricating a thin film transistor comprising the steps of: forming a conduction layer on an insulation substrate; forming a first side of a gate electrode by patterning the conduction layer; forming an insulation film side wall at the first side of the gate electrode; forming a second side of the gate electrode by etching the conduction layer, wherein the second side of the gate electrode has a negative slope; and forming an insulation film and a semiconductor layer on the gate electrode; and injecting impurity ions into the semiconductor layer, wherein a channel region is formed at the second side of the gate electrode, and source and drain regions are formed in the semiconductor layer adjacent to the channel region.
Claim 3
Dependent Claim
32 words
The method of claim 1, wherein the step of forming the second side of the gate electrode to have a negative slope comprises a dry etching using SF 6 +F 123 chemicals.
Claim 4
Dependent Claim
50 words
The method of claim 1, wherein the thin film transistor comprises a p channel transistor, and the injection of impurity ions comprises injecting p type impurity ions with an energy of about 5 KeV to 20 KeV and a density of about 1×10 14 to 1×10 16 atoms/cm 2 .
Claim 5
Dependent Claim
50 words
The method of claim 1, wherein the thin film transistor comprises an n channel transistor, and the injection of impurity ions comprises injecting n type impurity ions with an energy of about 10 KeV to 50 Kev and a density of about 1×10 14 to 1×10 6 atoms/cm 2 .
Claim 6
Dependent Claim
11 words
The method of claim 1, wherein the semiconductor layer comprises polysilicon.
Claim 7
Dependent Claim
21 words
The method of claim 1, wherein the semiconductor layer is formed to have a thickness of about 200 to 500 Angstroms.
Claim 8
Independent Claim
108 words
A method for fabricating a thin film transistor comprising the steps of: forming a conduction layer on an insulation substrate; patterning the conduction layer to form a gate electrode having first and second sides, wherein the first and second sides each have a negative slope; forming a gate insulation film on the gate electrode and the insulation substrate; forming a semiconductor layer on the gate insulation film; and injecting impurity ions into the semiconductor layer at an inclination angle, wherein a channel region is formed at the first side of the gate electrode, wherein source and drains are formed in the semiconductor layer adjacent to the channel region.
Claim 9
Independent Claim
108 words
A method for fabricating a thin film transistor comprising the steps of: forming a conduction layer on an insulation substrate; patterning the conduction layer to form a gate electrode having first and second sides, wherein the first and second sides each have a negative slope; forming a gate insulation film on the gate electrode and the insulation substrate; forming a semiconductor layer on the gate insulation film; and injecting impurity ions into the semiconductor layer at an inclination angle, wherein a channel region is formed at the first side of the gate electrode, wherein source and drains are formed in the semiconductor layer adjacent to the channel region.
Claim 10
Dependent Claim
33 words
The method of claim 7, wherein the patterning of the gate electrode to have negative slopes at the first and second sides thereof comprises a dry etching using SF 6 +F 123 chemicals.
Claim 11
Dependent Claim
50 words
The method of claim 7, wherein the thin film transistor comprises a p channel transistor, and the injection of impurity ions comprises injecting p type impurity ions with an energy of about 5 KeV to 20 KeV and a density of about 1×10 14 to 1×10 6 atoms/cm 2 .
Claim 12
Dependent Claim
50 words
The method of claim 7, wherein the thin film transistor comprises an n channel transistor, and the injection of impurity ions comprises injecting n type impurity ions with an energy of about 10 KeV to 50 KeV and a density of about 1×10 4 to 1×10 16 atoms/cm 2 .
Claim 13
Dependent Claim
11 words
The method of claim 7, wherein the semiconductor layer comprises polysilicon.
Claim 14
Independent Claim
105 words
A method for fabricating a thin film transistor comprising the steps of: forming a conduction layer on an insulation substrate; patterning the conduction layer to form a gate electrode having first and second sides, wherein the first and second sides each have a negative slope; forming a gate insulation film on the gate electrode and the insulation substrate; forming a semiconductor layer on the gate insulation film; and injecting impurities into the semiconductor layer, wherein channel regions are formed at the first and second sides of the gate electrode, wherein source and drain regions are formed in the semiconductor layer adjacent to the channel regions.
Claim 15
Independent Claim
105 words
A method for fabricating a thin film transistor comprising the steps of: forming a conduction layer on an insulation substrate; patterning the conduction layer to form a gate electrode having first and second sides, wherein the first and second sides each have a negative slope; forming a gate insulation film on the gate electrode and the insulation substrate; forming a semiconductor layer on the gate insulation film; and injecting impurities into the semiconductor layer, wherein channel regions are formed at the first and second sides of the gate electrode, wherein source and drain regions are formed in the semiconductor layer adjacent to the channel regions.
Claim 16
Dependent Claim
33 words
The method of claim 12, wherein the patterning of the gate electrode to have negative slopes at the first and second sides thereof comprises a dry etching using SF 6 +F 123 chemicals.
Claim 17
Dependent Claim
21 words
The method of claim 12, wherein the semiconductor layer is formed to have a thickness of about 200 to 500 Angstroms.
Claim 18
Dependent Claim
11 words
The method of claim 12, wherein the semiconductor layer comprises polysilicon.
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