Process of exactly patterning layer to target configuration by using photo-resist mask formed with dummy pattern

Claim 2

A process for etching a given pattern in a first layer, comprising the steps of: a) depositing a resist layer on said first layer; b) transferring a mask pattern to said resist layer, said mask pattern having a main pattern image corresponding to said given pattern and a stress-relief pattern image corresponding to a stress-relief pattern comprising at least one recess to be formed in said resist layer; c) developing said main pattern image and said stress-relief pattern image in said resist layer so as to form said resist layer into a resist mask having said at least one recess spaced from said first layer by a bottom portion of said photo-resist mask; d) baking said resist mask so as to increase an adhesion; and e) etching said given pattern into said first layer by using said resist mask.

Claim 3

The process as set forth in claim 1, in which said step b) includes the sub-steps of: b-1) covering said resist layer with a photo-mask having said mask pattern, and b-2) radiating light through said photo-mask to said resist layer so as to make said resist layer partially soluble in a developing solution, a first portion of said resist layer radiated through said main pattern image being soluble over a thickness of said resist layer, a second portion of said resist layer radiated through said stress-relief pattern being soluble to a depth less than said thickness.

Claim 4

The process as set forth in claim 2, in which said stress-relief pattern image has an open area transferring an amount of said light onto said resist layer insufficient to render the resist layer soluble over said thickness.

Claim 5

The process as set forth in claim 3, in which said open area is narrower than a limit of resolution capable of proportionally transferring an image.

Claim 6

The process as set forth in claim 1, in which said main pattern image has a plurality of first slits arranged in parallel at intervals, and said stress-relief pattern image has a second slit narrower than said plurality of first slit located in the vicinity of said plurality of first slits.

Claim 7

The process as set forth in claim 5, in which a distance between adjacent two of said plurality of first slits is equal to a distance between one of said plurality of first slits and said second slit.

Claim 8

The process as set forth in claim 1, in which said main pattern image has a rectangular open area, and said stress-relief pattern image has a frame-like open area provided outside of said rectangular open area.

Claim 9

A process of forming an etched pattern on a first layer, said etched pattern having a given configuration, comprising the steps of: a) forming the first layer; b) coating said layer with a photo-resist layer; c) covering said photo-resist layer with a photo-mask, the photo-mask having a main pattern image corresponding to said given configuration, and having a stress-relief pattern image corresponding to a pattern of stress relief recesses to be formed on said photo-resist layer; d) radiating a light through said photo-mask to said photo-resist layer so as to make a first portion of said photo-resist layer radiated through said main pattern image soluble, in a developing solution, over a thickness of said photo-resist layer, and a second portion of said photo-resist layer radiated through said stress-relief pattern image soluble to a depth less than said thickness; e) developing said main pattern image and said stress-relief pattern image in said photo-resist layer so as to form said photo-resist layer into a photo-resist mask having an open area exposing a portion of said first layer in said first portion, and having at least one recess in said second portion, said recess spaced from said first layer by a bottom portion of said photo-resist mask; f) baking said photo-resist mask so as to increase an adhesion between said first layer and said photo-resist mask; and g) etching the exposed portion of said first layer so as to form said pattern in said first layer to said given configuration.

Claim 10

A process of forming an etched pattern on a first layer, said etched pattern having a given configuration, comprising the steps of: a) forming the first layer; b) coating said layer with a photo-resist layer; c) covering said photo-resist layer with a photo-mask, the photo-mask having a main pattern image corresponding to said given configuration, and having a stress-relief pattern image corresponding to a pattern of stress relief recesses to be formed on said photo-resist layer; d) radiating a light through said photo-mask to said photo-resist layer so as to make a first portion of said photo-resist layer radiated through said main pattern image soluble, in a developing solution, over a thickness of said photo-resist layer, and a second portion of said photo-resist layer radiated through said stress-relief pattern image soluble to a depth less than said thickness; e) developing said main pattern image and said stress-relief pattern image in said photo-resist layer so as to form said photo-resist layer into a photo-resist mask having an open area exposing a portion of said first layer in said first portion, and having at least one recess in said second portion, said recess spaced from said first layer by a bottom portion of said photo-resist mask; f) baking said photo-resist mask so as to increase an adhesion between said first layer and said photo-resist mask; and g) etching the exposed portion of said first layer so as to form said pattern in said first layer to said given configuration.

Claim 11

A process of forming a layer to a given pattern, comprising the steps of: a) forming a conductive layer on a substrate; b) coating said conductive layer with a photo-resist layer; c) covering said photo-resist layer with a photo-mask, the photo-mask having a main pattern image corresponding to said given configuration, and having a stress-relief pattern image corresponding to a pattern of stress relief recesses to be formed on said photo-resist layer; d) radiating a light through said photo-mask to said photo-resist layer so as to make a first portion of said photo-resist layer radiated through said main pattern image soluble, in a developing solution, over a thickness of said photo-resist layer, and a second portion of said photo-resist layer radiated through said stress-relief pattern image soluble to a depth less than said thickness; e) developing said main pattern image and said stress-relief pattern image in said photo-resist layer so as to form said photo-resist layer into a photo-resist mask having an open area located within said first portion exposing a part of said conductive layer, and having at least one recess located within said second portion, said recess spaced from said first layer by a bottom portion of said photo-resist mask; f) baking said photo-resist mask so as to increase an adhesion between said conductive layer and said photo-resist mask; g) depositing a substance on said part of said conductive layer so as to form at least one column of said substance; h) removing said photo-resist mask; and l) forming said conductive layer to said given configuration by using said at least one column of said substance as a mask.

Claim 12

A process of forming a layer to a given pattern, comprising the steps of: a) forming a conductive layer on a substrate; b) coating said conductive layer with a photo-resist layer; c) covering said photo-resist layer with a photo-mask, the photo-mask having a main pattern image corresponding to said given configuration, and having a stress-relief pattern image corresponding to a pattern of stress relief recesses to be formed on said photo-resist layer; d) radiating a light through said photo-mask to said photo-resist layer so as to make a first portion of said photo-resist layer radiated through said main pattern image soluble, in a developing solution, over a thickness of said photo-resist layer, and a second portion of said photo-resist layer radiated through said stress-relief pattern image soluble to a depth less than said thickness; e) developing said main pattern image and said stress-relief pattern image in said photo-resist layer so as to form said photo-resist layer into a photo-resist mask having an open area located within said first portion exposing a part of said conductive layer, and having at least one recess located within said second portion, said recess spaced from said first layer by a bottom portion of said photo-resist mask; f) baking said photo-resist mask so as to increase an adhesion between said conductive layer and said photo-resist mask; g) depositing a substance on said part of said conductive layer so as to form at least one column of said substance; h) removing said photo-resist mask; and l) forming said conductive layer to said given configuration by using said at least one column of said substance as a mask.