US5753966A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with cleaved surface
Assignee: Sony Corp
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Filing: 1996-12-19
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Granted: 1998-05-19
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Expires: 2016-12-19
Abstract
Abstract A semiconductor light emitting device is prepared by the steps of forming a semiconductor layer 2 having a laminated structure containing at least a first cladding layer 6, a light emitting layer 7, and a second cladding layer 8 on a substrate 1 having {11-20} plane (plane a) as the main plane; and breaking integrally the semiconductor layer 2 and the substrate 1 under a heating condition to form a pair of facets on the above described substrate due to the plane which was cleaved in {1-102} plane (plane r) and at the same time, to form a pair of facets 3 extending along the above described pair of facets of the substrate 1 on the semiconductor layer 2.
Inventors
- 👤 Etsuo Morita
- 👤 Hiroji Kawai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/02; H01S5/0201; H01S5/0202
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
50 words
A semiconductor device, comprising: a substrate; and at least one layer composed of a semiconductor compound containing N and at least one of the elements selected from {Ga, Al, In} on said substrate; said substrate having a pair of facets within 5 degree of the {1-102} plane of said substrate.
Claim 2
Dependent Claim
50 words
A semiconductor device, comprising: a substrate; and at least one layer composed of a semiconductor compound containing N and at least one of the elements selected from {Ga, Al, In} on said substrate; said substrate having a pair of facets within 5 degree of the {1-102} plane of said substrate.
Claim 3
Dependent Claim
28 words
A semiconductor device as described in claim 1, wherein said at least one layer having a pair of facets which is parallel to said facets of said substrate.
Claim 4
Dependent Claim
28 words
A semiconductor device as described in claim 2, wherein said pair of facets of said at least one layer is a resonator of a semiconductor light emitting device.
Claim 5
Dependent Claim
14 words
A semiconductor device as described in claim 1, wherein said substrate is of sapphire.
Claim 6
Dependent Claim
18 words
A semiconductor device as described in claim 1, wherein said substrate has a main surface of {11-20} plane.
Claim 7
Dependent Claim
34 words
A semiconductor device as described in claim 2, further comprising: an insulating film on said facet of said at least one layer, having a refractive index substantially similar to that of said semiconductor compound.
Claim 8
Dependent Claim
36 words
A semiconductor device as described in claim 6, wherein said insulating film essentially consists of a material of at least one element selected from the group consisting of Al, Ga, and In in combination with N.
Claim 9
Dependent Claim
46 words
A semiconductor device, comprising: a sapphire substrate having a main surface in a {11-20} plane; and at least one layer of GaN on said main surface of said substrate; said substrate having a pair of facets within 5 degree of a {1-102} plane of the substrate.
Claim 10
Dependent Claim
46 words
A semiconductor device, comprising: a sapphire substrate having a main surface in a {11-20} plane; and at least one layer of GaN on said main surface of said substrate; said substrate having a pair of facets within 5 degree of a {1-102} plane of the substrate.
References Cited (Backward Citations)
US5604763A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-18 | 2001-11-17 | 2002-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-18 | 2005-11-17 | 2006-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-18 | 2009-11-17 | 2010-05-19 | $7700.00 | Window Closed / Lapsed |