US5753934A
Expired / Lapsed
US
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Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
Assignee: TDK Corp
•
Filing: 1995-09-07
•
Granted: 1998-05-19
•
Expires: 2015-09-07
Abstract
Abstract A multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.
Inventors
- 👤 Yoshihiko Yano
- 👤 Takao Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:01
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/682
Claims Analysis
Total Claims: 151
Claim 1
Independent Claim
90 words
A multilayer thin film comprising an oxide thin film formed on a semiconductor single crystal substrate, said oxide thin film comprising at least one epitaxial thin film composed mainly of zirconium oxide and an oriented thin film formed on said oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface, wherein the zirconium oxide of said oxide thin film contains at least 93 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 2
Dependent Claim
90 words
A multilayer thin film comprising an oxide thin film formed on a semiconductor single crystal substrate, said oxide thin film comprising at least one epitaxial thin film composed mainly of zirconium oxide and an oriented thin film formed on said oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface, wherein the zirconium oxide of said oxide thin film contains at least 93 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 3
Dependent Claim
41 words
The multilayer thin film of claim 1 wherein said dielectric material of perovskite or tungsten bronze type is selected from the group consisting of barium titanate, strontium titanate, lead zirconate titanate (PZT), strontium barium niobate (SBN) and lead barium niobate (PBN).
Claim 4
Dependent Claim
16 words
The multilayer thin film of claim 1 wherein said oriented thin film is an epitaxial film.
Claim 5
Dependent Claim
51 words
The multilayer thin film of claim 3 wherein said semiconductor single crystal substrate is a silicon single crystal substrate having a Si (100) plane at its surface and the crystal axis orientation relationship between said oriented thin film and the silicon single crystal substrate is perovskite or tungsten bronze 100!//Si 100!.
Claim 6
Dependent Claim
27 words
The multilayer thin film of claim 1 wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 7
Dependent Claim
38 words
The multilayer thin film of claim 1 wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 8
Dependent Claim
39 words
The multilayer thin film of claim 1 wherein said oxide thin film is an oxide thin film comprising a first epitaxial film composed mainly of zirconium oxide and a second epitaxial film formed thereon of a perovskite type material.
Claim 9
Dependent Claim
26 words
The multilayer thin film of claim 7 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or strontium titanate.
Claim 10
Dependent Claim
32 words
The multilayer thin film of claim 7 wherein the crystal axis orientation relationship between said silicon single crystal substrate and said second epitaxial film of perovskite type material is perovskite 100!//Si 100!.
Claim 11
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 1.
Claim 12
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 1.
Claim 13
Dependent Claim
138 words
A method for preparing a multilayer thin film of claim 1 comprising a semiconductor single crystal substrate, an oxide thin film formed thereon from zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a perovskite or tungsten bronze type material, said method comprising carrying out in a vacuum chamber the steps of heating a silicon single crystal substrate, introducing an oxidizing gas into the vacuum chamber, and supplying zirconium or zirconium and at least one rare earth element (inclusive of scandium and yttrium) to the single crystal substrate surface by evaporation, thereby epitaxially growing the oxide thin film on the single crystal substrate surface to form a unidirectionally oriented epitaxial film which serves as said oxide thin film.
Claim 14
Dependent Claim
70 words
The method for preparing a multilayer thin film of claim 12 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 15
Dependent Claim
61 words
The method for preparing a multilayer thin film of claim 12 wherein said semiconductor single crystal substrate is a surface treated silicon substrate which is formed of a silicon single crystal substrate and has on its surface a 1×1 surface structure formed of zirconium or zirconium and at least one rare earth metal element (inclusive of scandium and yttrium) and oxygen.
Claim 16
Dependent Claim
116 words
The method for preparing a multilayer thin film of claim 12 wherein said surface treated silicon substrate used is a silicon single crystal substrate which has been treated by forming a silicon oxide layer of 0.2 to 10 nm thick on a substrate surface, setting the substrate at a temperature of 600° to 1,200° C., introducing an oxidizing gas into the vacuum chamber to establish an atmosphere of 1×10 -4 to 1×10 -1 Torr at least in the proximity of the substrate, and in these conditions, introducing by evaporation zirconium or zirconium and at least one rare earth metal element (inclusive of scandium and yttrium) to the substrate surface having the silicon oxide layer formed thereon.
Claim 17
Dependent Claim
74 words
The method for preparing a multilayer thin film of claim 15 wherein the step of forming a silicon oxide layer includes heating a silicon single crystal substrate at 300° to 700° C. in the vacuum chamber having an oxidizing gas introduced therein while establishing an oxygen partial pressure of not lower than 1×10 -4 Torr at least in the atmosphere proximate to the substrate in the vacuum chamber, thereby forming the silicon oxide layer.
Claim 18
Dependent Claim
53 words
The method for preparing a multilayer thin film of claim 12 wherein an oxidizing gas is injected toward the surface of said silicon single crystal substrate from the proximity thereof, thereby creating only in the vicinity of said single crystal substrate an atmosphere having a higher oxidizing gas partial pressure than the remainder.
Claim 19
Dependent Claim
66 words
The method for preparing a multilayer thin film of claim 12 wherein said silicon single crystal substrate has a surface area of at least 10 square centimeter and is rotated within its plane, thereby providing an atmosphere of high partial pressure oxidizing gas entirely over said single crystal substrate for forming a substantially uniform oxide thin film over the entire surface of said single crystal substrate.
Claim 20
Dependent Claim
30 words
The method for preparing a multilayer thin film of claim 12 wherein said silicon single crystal substrate is heated to at least 750° C. during formation of said epitaxial film.
Claim 21
Dependent Claim
34 words
The multilayer thin film of claim 1, wherein the zirconium oxide of said oxide thin film contains at least 95 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 22
Dependent Claim
34 words
The multilayer thin film of claim 1, wherein the zirconium oxide of said oxide thin film contains at least 98 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 23
Dependent Claim
112 words
A multilayer thin film comprising on a silicon single crystal substrate having a Si (100) plane at its surface a conductive oriented thin film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface and an oxide thin film interposed between said silicon single crystal substrate and said epitaxial conductive thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide, wherein the zirconium oxide of said oxide thin film contains at least 93 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 24
Dependent Claim
112 words
A multilayer thin film comprising on a silicon single crystal substrate having a Si (100) plane at its surface a conductive oriented thin film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface and an oxide thin film interposed between said silicon single crystal substrate and said epitaxial conductive thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide, wherein the zirconium oxide of said oxide thin film contains at least 93 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 25
Dependent Claim
43 words
The multilayer thin film of claim 22 wherein said metal is a metal containing at least one member selected from the group consisting of Pt, Ir, Os, Re, Pd, Rh, and Ru, and said conductive oxide is an indium-containing oxide or perovskite oxide.
Claim 26
Dependent Claim
27 words
The multilayer thin film of claim 22 wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 27
Dependent Claim
37 words
The multilayer thin film of claim 22 wherein said oxide thin film has a ten point mean-roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 28
Dependent Claim
41 words
The multilayer thin film of claim 22 wherein said oxide thin film is an oxide thin film comprising at least a first epitaxial film composed mainly of zirconium oxide and a second epitaxial film formed thereon of a perovskite type material.
Claim 29
Dependent Claim
27 words
The multilayer thin film of claim 26 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or type strontium titanate.
Claim 30
Dependent Claim
32 words
The multilayer thin film of claim 26 wherein the crystal axis orientation relationship between said silicon single crystal substrate and said second epitaxial film of perovskite type material is perovskite 100!//Si 100!.
Claim 31
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 22.
Claim 32
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 22.
Claim 33
Dependent Claim
34 words
The multilayer thin film of claim 22, wherein the zirconium oxide of said oxide thin film contains at least 95 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 34
Dependent Claim
34 words
The multilayer thin film of claim 31, wherein the zirconium oxide of said oxide thin film contains at least 98 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 35
Dependent Claim
38 words
The multilayer thin film of claim 31 wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 36
Dependent Claim
130 words
A multilayer thin film comprising on a silicon single crystal substrate of silicon single crystal having a Si (100) plane at its surface a conductive oriented film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface, an oriented thin film formed on said conductive oriented film from a perovskite or tungsten bronze type material, and an oxide thin film interposed between said silicon single crystal substrate and said conductive oriented thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide, wherein the zirconium oxide of said oxide thin film contains at least 93 mol % of Zr based on the amount of only constituted elements excluding oxygen.
Claim 37
Dependent Claim
130 words
A multilayer thin film comprising on a silicon single crystal substrate of silicon single crystal having a Si (100) plane at its surface a conductive oriented film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface, an oriented thin film formed on said conductive oriented film from a perovskite or tungsten bronze type material, and an oxide thin film interposed between said silicon single crystal substrate and said conductive oriented thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide, wherein the zirconium oxide of said oxide thin film contains at least 93 mol % of Zr based on the amount of only constituted elements excluding oxygen.
Claim 38
Dependent Claim
43 words
The multilayer thin film of claim 34 wherein said metal is a metal containing at least one member selected from the group consisting of Pt, Ir, Os, Re, Pd, Rh, and Ru, and said conductive oxide is an indium-containing oxide or perovskite oxide.
Claim 39
Dependent Claim
39 words
The multilayer thin film of claim 34 wherein said perovskite or tungsten bronze type material is selected from the group consisting of barium titanate, strontium titanate, lead zirconate titanate (PZT), strontium barium niobate (SBN) and lead barium niobate (PBN).
Claim 40
Dependent Claim
16 words
The multilayer thin film of claim 34 wherein said oriented thin film is an epitaxial film.
Claim 41
Dependent Claim
29 words
The multilayer thin film of claim 34 wherein the crystal axis orientation relationship between said silicon substrate and said oriented thin film is perovskite or tungsten bronze 100!//Si 100!.
Claim 42
Dependent Claim
36 words
The multilayer thin film of claim 34 wherein the plane orientation relationship among said silicon single crystal substrate, said metal oriented thin film, and said oriented thin film is perovskite or tungsten bronze (100)//metal (100)//Si (100).
Claim 43
Dependent Claim
27 words
The multilayer thin film of claim 34 wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 44
Dependent Claim
38 words
The multilayer thin film of claim 34 wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 45
Dependent Claim
56 words
The multilayer thin film of claim 34 wherein said oxide thin film is an oxide thin film comprising at least a first epitaxial film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) and a second epitaxial film formed thereon of a perovskite type material.
Claim 46
Dependent Claim
26 words
The multilayer thin film of claim 42 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or strontium titante.
Claim 47
Dependent Claim
32 words
The multilayer thin film of claim 42 wherein the crystal axis orientation relationship between said silicon single crystal substrate and said second epitaxial film of perovskite type material is perovskite 100!//Si 100!.
Claim 48
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 34.
Claim 49
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 34.
Claim 50
Dependent Claim
34 words
The laminate thin film of claim 34, wherein the zirconium oxide of said oxide thin film contains at least 95 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 51
Dependent Claim
34 words
The laminate thin film of claim 47, wherein the zirconium oxide of said oxide thin film contains at least 98 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 52
Dependent Claim
98 words
A multilayer thin film comprising an oxide thin film formed on a semiconductor single crystal substrate, said oxide thin film comprising at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface, wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 53
Dependent Claim
98 words
A multilayer thin film comprising an oxide thin film formed on a semiconductor single crystal substrate, said oxide thin film comprising at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface, wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 54
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 49.
Claim 55
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 49.
Claim 56
Dependent Claim
138 words
A method for preparing a multilayer thin film comprising a semiconductor single crystal substrate, an oxide thin film formed thereon from zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a perovskite or tungsten bronze type material of claim 49, said method comprising carrying out in a vacuum chamber the steps of heating a silicon single crystal substrate, introducing an oxidizing gas into the vacuum chamber, and supplying zirconium or zirconium and at least one rare earth element (inclusive of scandium and yttrium) to the single crystal substrate surface by evaporation, thereby epitaxially growing the oxide thin film on the single crystal substrate surface to form a unidirectionally oriented epitaxial film which serves as said oxide thin film.
Claim 57
Dependent Claim
70 words
The method for preparing a multilayer thin film of claim 52 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 58
Dependent Claim
61 words
The method for preparing a multilayer thin film of claim 52 wherein said semiconductor single crystal substrate is a surface treated silicon substrate which is formed of a silicon single crystal substrate and has on its surface a 1×1 surface structure formed of zirconium or zirconium and at least one rare earth metal element (inclusive of scandium and yttrium) and oxygen.
Claim 59
Dependent Claim
116 words
The method for preparing a multilayer thin film of claim 52 wherein said surface treated silicon substrate used is a silicon single crystal substrate which has been treated by forming a silicon oxide layer of 0.2 to 10 nm thick on a substrate surface, setting the substrate at a temperature of 600° to 1,200° C., introducing an oxidizing gas into the vacuum chamber to establish an atmosphere of 1×10 -4 to 1×10 -1 Torr at least in the proximity of the substrate, and in these conditions, introducing by evaporation zirconium or zirconium and at least one rare earth metal element (inclusive of scandium and yttrium) to the substrate surface having the silicon oxide layer formed thereon.
Claim 60
Dependent Claim
74 words
The method for preparing a multilayer thin film of claim 55 wherein the step of forming a silicon oxide layer includes heating a silicon single crystal substrate at 300° to 700° C. in the vacuum chamber having an oxidizing gas introduced therein while establishing an oxygen partial pressure of not lower than 1×10 -4 Torr at least in the atmosphere proximate to the substrate in the vacuum chamber, thereby forming the silicon oxide layer.
Claim 61
Dependent Claim
53 words
The method for preparing a multilayer thin film of claim 52 wherein an oxidizing gas is injected toward the surface of said silicon single crystal substrate from the proximity thereof, thereby creating only in the vicinity of said single crystal substrate an atmosphere having a higher oxidizing gas partial pressure than the remainder.
Claim 62
Dependent Claim
66 words
The method for preparing a multilayer thin film of claim 52 wherein said silicon single crystal substrate has a surface area of at least 10 square centimeter and is rotated within its plane, thereby providing an atmosphere of high partial pressure oxidizing gas entirely over said single crystal substrate for forming a substantially uniform oxide thin film over the entire surface of said single crystal substrate.
Claim 63
Dependent Claim
30 words
The method for preparing a multilayer thin film of claim 52 wherein said silicon single crystal substrate is heated to at least 750° C. during formation of said epitaxial film.
Claim 64
Dependent Claim
41 words
The multilayer thin film of claim 49 wherein said dielectric material of perovskite or tungsten bronze type is selected from the group consisting of barium titanate, strontium titanate, lead zirconate titanate (PZT), strontium barium niobate (SEN) and lead barium niobate (PBN).
Claim 65
Dependent Claim
16 words
The multilayer thin film of claim 49 wherein said oriented thin film is an epitaxial film.
Claim 66
Dependent Claim
51 words
The multilayer thin film of claim 61 wherein said semiconductor single crystal substrate is a silicon single crystal substrate having a Si (100) plane at its surface and the crystal axis orientation relationship between said oriented thin film and the silicon single crystal substrate is perovskite or tungsten bronze 100!//Si 100!.
Claim 67
Dependent Claim
71 words
The multilayer thin film of claim 49 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) of said oxide thin film has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 68
Dependent Claim
38 words
The multilayer thin film of claim 49 wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 69
Dependent Claim
54 words
The multilayer thin film of claim 49 wherein said oxide thin film is an oxide thin film comprising a first epitaxial film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) and a second epitaxial film formed thereon of a perovskite type material.
Claim 70
Dependent Claim
26 words
The multilayer thin film of claim 65 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or strontium titanate.
Claim 71
Dependent Claim
32 words
The multilayer thin film of claim 65 wherein the crystal axis orientation relationship between said silicon single crystal substrate and said second epitaxial film of perovskite type material is perovskite 100!//Si 100!.
Claim 72
Dependent Claim
213 words
A method for preparing a multilayer thin film comprising a semiconductor single crystal substrate, an oxide thin film formed thereon from zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a perovskite or tungsten bronze type material of claim 49, said method comprising carrying out in a vacuum chamber the steps of heating a silicon single crystal substrate having the oxide thin film formed thereon, introducing an oxidizing gas into the vacuum chamber, and supplying by evaporation constituent metals of the perovskite or tungsten bronze type material to the silicon single crystal substrate surface having the oxide oriented film formed thereon, wherein in an initial stage when a film is being formed to a thickness of 0 to 1 nm, an A site metal and a B site metal of the perovskite or tungsten bronze composition are supplied such that the feed ratio A/B in molar ratio may range from 0 to 1 for the perovskite type material and from 0 to 0.5 for the tungsten bronze type material, thereby epitaxially growing the oriented film on the oxide thin film to form a c-plane unidirectionally oriented film which serves as said oriented film.
Claim 73
Dependent Claim
30 words
The method for preparing a multilayer thin film of claim 68 wherein said silicon single crystal substrate is heated to at least 800° C. during formation of said epitaxial film.
Claim 74
Dependent Claim
109 words
A multilayer thin film comprising an oxide thin film formed on a semiconductor single crystal substrate, said oxide thin film comprising at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface, wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 75
Dependent Claim
109 words
A multilayer thin film comprising an oxide thin film formed on a semiconductor single crystal substrate, said oxide thin film comprising at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface, wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 76
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 70.
Claim 77
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 70.
Claim 78
Dependent Claim
138 words
A method for preparing a multilayer thin film comprising a semiconductor single crystal substrate, an oxide thin film formed thereon from zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a perovskite or tungsten bronze type material of claim 70, said method comprising carrying out in a vacuum chamber the steps of heating a silicon single crystal substrate, introducing an oxidizing gas into the vacuum chamber, and supplying zirconium or zirconium and at least one rare earth element (inclusive of scandium and yttrium) to the single crystal substrate surface by evaporation, thereby epitaxially growing the oxide thin film on the single crystal substrate surface to form a unidirectionally oriented epitaxial film which serves as said oxide thin film.
Claim 79
Dependent Claim
70 words
The method for preparing a multilayer thin film of claim 73 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 80
Dependent Claim
61 words
The method for preparing a multilayer thin film of claim 73 wherein said semiconductor single crystal substrate is a surface treated silicon substrate which is formed of a silicon single crystal substrate and has on its surface a 1×1 surface structure formed of zirconium or zirconium and at least one rare earth metal element (inclusive of scandium and yttrium) and oxygen.
Claim 81
Dependent Claim
116 words
The method for preparing a multilayer thin film of claim 73 wherein said surface treated silicon substrate used is a silicon single crystal substrate which has been treated by forming a silicon oxide layer of 0.2 to 10 nm thick on a substrate surface, setting the substrate at a temperature of 600° to 1,200° C., introducing an oxidizing gas into the vacuum chamber to establish an atmosphere of 1×10 -4 to 1×10 -1 Torr at least in the proximity of the substrate, and in these conditions, introducing by evaporation zirconium or zirconium and at least one rare earth metal element (inclusive of scandium and yttrium) to the substrate surface having the silicon oxide layer formed thereon.
Claim 82
Dependent Claim
74 words
The method for preparing a multilayer thin film of claim 76 wherein the step of forming a silicon oxide layer includes heating a silicon single crystal substrate at 300° to 700° C. in the vacuum chamber having an oxidizing gas introduced therein while establishing an oxygen partial pressure of not lower than 1×10 -4 Torr at least in the atmosphere proximate to the substrate in the vacuum chamber, thereby forming the silicon oxide layer.
Claim 83
Dependent Claim
53 words
The method for preparing a multilayer thin film of claim 73 wherein an oxidizing gas is injected toward the surface of said silicon single crystal substrate from the proximity thereof, thereby creating only in the vicinity of said single crystal substrate an atmosphere having a higher oxidizing gas partial pressure than the remainder.
Claim 84
Dependent Claim
66 words
The method for preparing a multilayer thin film of claim 73 wherein said silicon single crystal substrate has a surface area of at least 10 square centimeter and is rotated within its plane, thereby providing an atmosphere of high partial pressure oxidizing gas entirely over said single crystal substrate for forming a substantially uniform oxide thin film over the entire surface of said single crystal substrate.
Claim 85
Dependent Claim
30 words
The method for preparing a multilayer thin film of claim 73 wherein said silicon single crystal substrate is heated to at least 750° C. during formation of said epitaxial film.
Claim 86
Dependent Claim
41 words
The multilayer thin film of claim 70 wherein said dielectric material of perovskite or tungsten bronze type is selected from the group consisting of barium titanate, strontium titanate, lead zirconate titanate (PZT), strontium barium niobate (SBN) and lead barium niobate (PEN).
Claim 87
Dependent Claim
16 words
The multilayer thin film of claim 70 wherein said oriented thin film is an epitaxial film.
Claim 88
Dependent Claim
51 words
The multilayer thin film of claim 82 wherein said semiconductor single crystal substrate is a silicon single crystal substrate having a Si (100) plane at its surface and the crystal axis orientation relationship between said oriented thin film and the silicon single crystal substrate is perovskite or tungsten bronze 100!//Si 100!.
Claim 89
Dependent Claim
71 words
The multilayer thin film of claim 70 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) of said oxide thin film has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 90
Dependent Claim
54 words
The multilayer thin film of claim 70 wherein said oxide thin film is an oxide thin film comprising a first epitaxial film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) and a second epitaxial film formed thereon of a perovskite type material.
Claim 91
Dependent Claim
26 words
The multilayer thin film of claim 85 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or strontium titanate.
Claim 92
Dependent Claim
32 words
The multilayer thin film of claim 85 wherein the crystal axis orientation relationship between said silicon single crystal substrate and said second epitaxial film of perovskite type material is perovskite 100!//Si 100!.
Claim 93
Dependent Claim
213 words
A method for preparing a multilayer thin film comprising a semiconductor single crystal substrate, an oxide thin film formed thereon from zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a perovskite or tungsten bronze type material of claim 70, said method comprising carrying out in a vacuum chamber the steps of heating a silicon single crystal substrate having the oxide thin film formed thereon, introducing an oxidizing gas into the vacuum chamber, and supplying by evaporation constituent metals of the perovskite or tungsten bronze type material to the silicon single crystal substrate surface having the oxide oriented film formed thereon, wherein in an initial stage when a film is being formed to a thickness of 0 to 1 nm, an A site metal and a B site metal of the perovskite or tungsten bronze composition are supplied such that the feed ratio A/B in molar ratio may range from 0 to 1 for the perovskite type material and from 0 to 0.5 for the tungsten bronze type material, thereby epitaxially growing the oriented film on the oxide thin film to form a c-plane unidirectionally oriented film which serves as said oriented film.
Claim 94
Dependent Claim
30 words
The method for preparing a multilayer thin film of claim 88 wherein said silicon single crystal substrate is heated to at least 800° C. during formation of said epitaxial film.
Claim 95
Dependent Claim
117 words
A multilayer thin film comprising on a silicon single crystal substrate having a Si (100) plane at its surface a conductive oriented thin film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane and unidirectionally oriented parallel to the substrate surface and an oxide thin film interposed between said silicon single crystal substrate and said conductive oriented thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth element (inclusive of scandium and yttrium), wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 96
Dependent Claim
117 words
A multilayer thin film comprising on a silicon single crystal substrate having a Si (100) plane at its surface a conductive oriented thin film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane and unidirectionally oriented parallel to the substrate surface and an oxide thin film interposed between said silicon single crystal substrate and said conductive oriented thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth element (inclusive of scandium and yttrium), wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 97
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 90.
Claim 98
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 90.
Claim 99
Dependent Claim
43 words
The multilayer thin film of claim 90 wherein said metal is a metal containing at least one member selected from the group consisting of Pt, Ir, Os, Re, Pd, Rh, and Ru, and said conductive oxide is an indium-containing oxide or perovskite oxide.
Claim 100
Dependent Claim
71 words
The multilayer thin film of claim 90 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) of said oxide thin film has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 101
Dependent Claim
56 words
The multilayer thin film of claim 90 wherein said oxide thin film is an oxide thin film comprising at least a first epitaxial film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) and a second epitaxial film formed thereon of a perovskite type material.
Claim 102
Dependent Claim
26 words
The multilayer thin film of claim 95 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or strontium titanate.
Claim 103
Dependent Claim
32 words
The multilayer thin film of claim 95 wherein the crystal axis orientation relationship between said silicon single crystal substrate and said second epitaxial film of perovskite type material is perovskite 100!//Si 100!.
Claim 104
Dependent Claim
127 words
A multilayer thin film comprising on a silicon single crystal substrate having a Si (100) plane at its surface a conductive oriented thin film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface and an oxide thin film interposed between said silicon single crystal substrate and said conductive oriented thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth element (inclusive of scandium and yttrium), wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 105
Dependent Claim
127 words
A multilayer thin film comprising on a silicon single crystal substrate having a Si (100) plane at its surface a conductive oriented thin film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface and an oxide thin film interposed between said silicon single crystal substrate and said conductive oriented thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth element (inclusive of scandium and yttrium), wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 106
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 98.
Claim 107
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 98.
Claim 108
Dependent Claim
43 words
The multilayer thin film of claim 98 wherein said metal is a metal containing at least one member selected from the group consisting of Pt, Ir, Os, Re, Pd, Rh, and Ru, and said conductive oxide is an indium-containing oxide or perovskite oxide.
Claim 109
Dependent Claim
71 words
The multilayer thin film of claim 98 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) of said oxide thin film has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 110
Dependent Claim
56 words
The multilayer thin film of claim 98 wherein said oxide thin film is an oxide thin film comprising at least a first epitaxial film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) and a second epitaxial film formed thereon of a perovskite type material.
Claim 111
Dependent Claim
26 words
The multilayer thin film of claim 103 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or strontium titanate.
Claim 112
Dependent Claim
32 words
The multilayer thin film of claim 103 wherein the crystal axis orientation relationship between said silicon single crystal substrate and said second epitaxial film of perovskite type material is perovskite 100!//Si 100!.
Claim 113
Dependent Claim
137 words
A multilayer thin film comprising on a silicon single crystal substrate of silicon single crystal having a Si (100) plane at its surface a conductive oriented film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface, an oriented thin film formed on said conductive oriented film from a perovskite or tungsten bronze type material, and an oxide thin film interposed between said silicon single crystal substrate and said epitaxial conductive thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth element (inclusive of scandium and yttrium), wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 114
Dependent Claim
137 words
A multilayer thin film comprising on a silicon single crystal substrate of silicon single crystal having a Si (100) plane at its surface a conductive oriented film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface, an oriented thin film formed on said conductive oriented film from a perovskite or tungsten bronze type material, and an oxide thin film interposed between said silicon single crystal substrate and said epitaxial conductive thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth element (inclusive of scandium and yttrium), wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 115
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 106.
Claim 116
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 106.
Claim 117
Dependent Claim
43 words
The multilayer thin film of claim 106 wherein said metal is a metal containing at least one member selected from the group consisting of Pt, Ir, Os, Re, Pd, Rh, and Ru, and said conductive oxide is an indium-containing oxide or perovskite oxide.
Claim 118
Dependent Claim
39 words
The multilayer thin film of claim 106 wherein said perovskite or tungsten bronze type material is selected from the group consisting of barium titanate, strontium titanate, lead zirconate titanate (PZT), strontium barium niobate (SBN) and lead barium niobate (PBN).
Claim 119
Dependent Claim
16 words
The multilayer thin film of claim 106 wherein said oriented thin film is an epitaxial film.
Claim 120
Dependent Claim
36 words
The multilayer thin film of claim 106 wherein the plane orientation relationship among said silicon single crystal substrate, said metal oriented thin film, and said oriented thin film is perovskite or tungsten bronze (100)/metal (100)//Si (100).
Claim 121
Dependent Claim
71 words
The multilayer thin film of claim 106 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) of said oxide thin film has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 122
Dependent Claim
38 words
The multilayer thin film of claim 106 wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 123
Dependent Claim
56 words
The multilayer thin film of claim 106 wherein said oxide thin film is an oxide thin film comprising at least a first epitaxial film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) and a second epitaxial film formed thereon of a perovskite type material.
Claim 124
Dependent Claim
26 words
The multilayer thin film of claim 115 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or strontium titanate.
Claim 125
Dependent Claim
149 words
A multilayer thin film comprising on a silicon single crystal substrate of silicon single crystal having a Si (100) plane at its surface a conductive oriented thin film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface, an oriented thin film formed on said conductive oriented film from a perovskite or tungsten bronze type material, and an oxide thin film interposed between said silicon single crystal substrate and said epitaxial conductive thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth element (inclusive of scandium and yttrium), wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 126
Dependent Claim
149 words
A multilayer thin film comprising on a silicon single crystal substrate of silicon single crystal having a Si (100) plane at its surface a conductive oriented thin film which is an epitaxial film formed of a metal or a conductive oxide with its c-plane or a-plane unidirectionally oriented parallel to the substrate surface, an oriented thin film formed on said conductive oriented film from a perovskite or tungsten bronze type material, and an oxide thin film interposed between said silicon single crystal substrate and said epitaxial conductive thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth element (inclusive of scandium and yttrium), wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 127
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 117.
Claim 128
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 117.
Claim 129
Dependent Claim
43 words
The multilayer thin film of claim 117 wherein said metal is a metal containing at least one member selected from the group consisting of Pt, Ir, Os, Re, Pd, Rh, and Ru, and said conductive oxide is an indium-containing oxide or perovskite oxide.
Claim 130
Dependent Claim
39 words
The multilayer thin film of claim 117 wherein said perovskite or tungsten bronze type material is selected from the group consisting of barium titanate, strontium titanate, lead zirconate titanate (PZT), strontium barium niobate (SBN) and lead barium niobate (PBN).
Claim 131
Dependent Claim
16 words
The multilayer thin film of claim 117 wherein said oriented thin film is an epitaxial film.
Claim 132
Dependent Claim
36 words
The multilayer thin film of claim 117 wherein the plane orientation relationship among said silicon single crystal substrate, said metal oriented thin film, and said oriented thin film is perovskite or tungsten bronze (100)//metal (100)//Si (100).
Claim 133
Dependent Claim
71 words
The multilayer thin film of claim 117 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) of said oxide thin film has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 134
Dependent Claim
56 words
The multilayer thin film of claim 117 wherein said oxide thin film is an oxide thin film comprising at least a first epitaxial film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) and a second epitaxial film formed thereon of a perovskite type material.
Claim 135
Dependent Claim
26 words
The multilayer thin film of claim 125 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or strontium titanate.
Claim 136
Dependent Claim
111 words
A multilayer thin film comprising an oriented thin film which is formed on a silicon single crystal substrate of silicon single crystal having a Si (100) plane at its surface from a perovskite or tungsten bronze type material and an oxide thin film interposed between said silicon single crustal substrate and said oriented thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), a crystal axis orientation relationship being perovskite or tungsten bronze 100!//oxide 100!//Si 100! and a plane orientation relationship being perovskite or tungsten bronze (100)//oxide (001)//Si (100).
Claim 137
Dependent Claim
111 words
A multilayer thin film comprising an oriented thin film which is formed on a silicon single crystal substrate of silicon single crystal having a Si (100) plane at its surface from a perovskite or tungsten bronze type material and an oxide thin film interposed between said silicon single crustal substrate and said oriented thin film, said oxide thin film comprising at least one thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), a crystal axis orientation relationship being perovskite or tungsten bronze 100!//oxide 100!//Si 100! and a plane orientation relationship being perovskite or tungsten bronze (100)//oxide (001)//Si (100).
Claim 138
Dependent Claim
71 words
The multilayer thin film of claim 127 wherein the zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) of said oxide thin film has the composition: Zr 1-x R x O 2- δ wherein R is a rare earth metal element inclusive of scandium and yttrium, x is a number of 0 to 0.75, and δ is a number of 0 to 0.5.
Claim 139
Dependent Claim
34 words
The multilayer thin film of claim 127 wherein the zirconium oxide of said oxide thin film contains at least 93 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 140
Dependent Claim
27 words
The multilayer thin film of claim 127 wherein a rocking curve of (002) reflection of said oxide thin film has a half-value width of up to 1.5°.
Claim 141
Dependent Claim
38 words
The multilayer thin film of claim 127 wherein said oxide thin film has a ten point mean roughness Rz of up to 2 nm across a reference length of 500 nm over at least 80% of its surface.
Claim 142
Dependent Claim
56 words
The multilayer thin film of claim 127 wherein said oxide thin film is an oxide thin film comprising at least a first epitaxial film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium) and a second epitaxial film formed thereon of a perovskite type material.
Claim 143
Dependent Claim
27 words
The multilayer thin film of claim 132 wherein the perovskite type material of said second epitaxial film is composed mainly of barium titanate or type strontium titanate.
Claim 144
Dependent Claim
36 words
The multilayer thin film of claim 132 wherein the crystal axis orientation relationship between said silicon single crystal substrate and said second epitaxial film of perovskite type material is perovskite 100!//Si 100! and perovskite (001)//Si (001).
Claim 145
Dependent Claim
213 words
A method for preparing a multilayer thin film of claim 127 comprising a semiconductor single crystal substrate, an oxide thin film formed thereon from zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium), and an oriented thin film formed on said oxide thin film from a perovskite or tungsten bronze type material, said method comprising carrying out in a vacuum chamber the steps of heating a silicon single crystal substrate having the oxide thin film formed thereon, introducing an oxidizing gas into the vacuum chamber, and supplying by evaporation constituent metals of the perovskite or tungsten bronze type material to the silicon single crystal substrate surface having the oxide oriented film formed thereon, wherein in an initial stage when a film is being formed to a thickness of 0 to 1 nm, an A site metal and a B site metal of the perovskite or tungsten bronze composition are supplied such that the feed ratio A/B in molar ratio may range from 0 to 1 for the perovskite type material and from 0 to 0.5 for the tungsten bronze type material, thereby epitaxially growing the oriented film on the oxide thin film to form a c-plane unidirectionally oriented film which serves as said oriented film.
Claim 146
Dependent Claim
30 words
The method for preparing a multilayer thin film of claim 135 wherein said silicon single crystal substrate is heated to at least 800° C. during formation of said epitaxial film.
Claim 147
Dependent Claim
14 words
A substrate for an electronic device comprising the multilayer thin film of claim 127.
Claim 148
Dependent Claim
11 words
An electronic device comprising the multilayer thin film of claim 127.
Claim 149
Dependent Claim
34 words
The multilayer thin film of claim 127, wherein the zirconium oxide of said oxide thin film contains at least 95 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 150
Dependent Claim
34 words
The multilayer thin film of claim 139, wherein the zirconium oxide of said oxide thin film contains at least 98 mol % of Zr based on the amount of only constituent elements excluding oxygen.
Claim 151
Dependent Claim
39 words
The multilayer thin film of claim 127 wherein said perovskite or tungsten bronze type material is selected from the group consisting of barium titanate, strontium titanate, lead zirconate titanate (PZT), strontium barium niobate (SBN) and lead barium niobate (PBN).
References Cited (Backward Citations)
US5185829A
Cited
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