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US5747201A Expired / Lapsed US ⏱️ 0.0 years remaining

Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method

Assignee: Hitachi Ltd
•
Filing: 1995-02-22
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Granted: 1998-05-05
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Expires: 2015-02-22
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Abstract

Abstract A method for irradiating a substrate such as a semiconductor substrate, coated with a photoresist, with light to measure variations in optical properties such as reflectivity, refractive index, transmittance, polarization, spectral transmittance, for determining an optimum photoresist coating condition, an optimum photoresist baking condition, an optimum developing condition or an optimum exposure energy quantity, and forming a photoresist pattern according to the optimum condition. A system for the exposure method, a controlling method of forming a photoresist film by use of the exposure method, and a system for the controlling method, are useful for stabilization of the formation or treatment of the photoresist film, and ensure less variations in the pattern size. Furthermore, even in the case of a thin film other than a photoresist film, the formation or treatment of the thin film can be stabilized by measuring the optical property before and during or after the formation of the thin film and using the measurement results to control the condition for forming the thin film, the etching condition or the coating condition.

Inventors

  • 👤 Yasuhiko Nakayama
  • 👤 Masataka Shiba
  • 👤 Susumu Komoriya

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 13:12
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70605; G03F7/70608; G03F7/20; G03F7/7055; G03F7/70566; G03F7/70583

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 83 words
A controlling method of forming a thin film which comprises the steps of; performing a first optical measurement of a substrate before formation of the thin film; performing a second optical measurement of a substrate during a treatment of the thin film on the substrate; correcting the second optical measurement to thereby determine an optical property of the substrate being treated; and, controlling a condition for treating the thin film based on the optical property of the thin film determined in the correcting.
Claim 2
Dependent Claim 83 words
A controlling method of forming a thin film which comprises the steps of; performing a first optical measurement of a substrate before formation of the thin film; performing a second optical measurement of a substrate during a treatment of the thin film on the substrate; correcting the second optical measurement to thereby determine an optical property of the substrate being treated; and, controlling a condition for treating the thin film based on the optical property of the thin film determined in the correcting.
Claim 3
Dependent Claim 45 words
The controlling method as set forth in claim 1, wherein the thin film is a photoresist, and the condition controlled in the controlling step is a quantity of exposure of a light energy for exposing the photoresist to said light during formation of the photoresist.
Claim 4
Dependent Claim 34 words
The controlling method as set forth in claim 1, wherein an etching is formed in the thin film, and the condition controlled in the controlling step is a condition for etching the thin film.
Claim 5
Dependent Claim 33 words
The controlling method as set forth in claim 1, wherein the first and second optical measurements are measured by measuring one of reflectivity, refractive index, transmittance, polarization property, spectral transmittance, and absorption coefficient.
Claim 6
Dependent Claim 46 words
The controlling method as set forth in claim 1, wherein the first and second optical measurements are measured by use of first light having a first exposure wavelength and at least one kind of second light having a second wavelength different from the first exposure wavelength.
Claim 7
Dependent Claim 48 words
The controlling method as set forth in claim 1, wherein the first and second optical measurements are measured based on a difference between the optical property of the thin film before an exposure of light and the optical property of the thin film after the exposure of light.
Claim 8
Dependent Claim 31 words
The controlling method as set forth in claim 1, wherein the thin film is a photoresist, and the condition controlled in the controlling step is a coating condition of the photoresist.
Claim 9
Dependent Claim 31 words
The controlling method as set forth in claim 1, wherein the thin film is a photoresist, and the condition controlled in the controlling step is a condition for baking the photoresist.
Claim 10
Dependent Claim 32 words
The controlling method as set forth in claim 1, wherein the thin film is a photoresist, and the condition controlled in the controlling step is a condition for development of the photoresist.
Claim 11
Dependent Claim 25 words
The controlling method as set forth in claim 1, wherein the condition controlled in the controlling step is a condition for forming the thin film.
Claim 12
Dependent Claim 25 words
The controlling method as set forth in claim 1, wherein the condition controlled in the controlling step is a condition for coating the thin film.
Claim 13
Dependent Claim 120 words
A controlling method of forming a thin film which comprises the steps of: performing a first optical measurement of a substrate before formation of the thin film; performing a second optical measurement of the substrate after treatment of the thin film on the substrate; correcting the second optical measurement to thereby determine an optical property of the substrate having been treated; and, controlling a condition for treating the thin film based on the optical property of the thin film determined in the correcting; wherein the first and second optical measurements are measured by use of first light having a first exposure wavelength and at least one kind of second light having a second wavelength different from the first exposure wavelength.
Claim 14
Dependent Claim 120 words
A controlling method of forming a thin film which comprises the steps of: performing a first optical measurement of a substrate before formation of the thin film; performing a second optical measurement of the substrate after treatment of the thin film on the substrate; correcting the second optical measurement to thereby determine an optical property of the substrate having been treated; and, controlling a condition for treating the thin film based on the optical property of the thin film determined in the correcting; wherein the first and second optical measurements are measured by use of first light having a first exposure wavelength and at least one kind of second light having a second wavelength different from the first exposure wavelength.
Claim 15
Independent Claim 123 words
A method comprising the steps of: measuring optical properties of a wafer to obtain a first measurement; sending the first measurement to a process control system; forming a thin film on the wafer by an apparatus under selected process conditions; treating the wafer by the apparatus under the selected process conditions; measuring the optical properties of the wafer having the thin film formed and treated thereon to obtain a second measurement; sending the second measurement to the process control system; correcting the second measurement in the process control system based on the first measurement; calculating variations in the process conditions based on the correcting; feeding the variations back to the apparatus; and, controlling the process conditions of the apparatus according to the variations.
Claim 16
Independent Claim 123 words
A method comprising the steps of: measuring optical properties of a wafer to obtain a first measurement; sending the first measurement to a process control system; forming a thin film on the wafer by an apparatus under selected process conditions; treating the wafer by the apparatus under the selected process conditions; measuring the optical properties of the wafer having the thin film formed and treated thereon to obtain a second measurement; sending the second measurement to the process control system; correcting the second measurement in the process control system based on the first measurement; calculating variations in the process conditions based on the correcting; feeding the variations back to the apparatus; and, controlling the process conditions of the apparatus according to the variations.

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