US5740099A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device having peripheral circuit and interface circuit fabricated on bulk region out of silicon-on-insulator region for memory cells
Assignee: Renesas Electronics Corp
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Filing: 1996-02-05
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Granted: 1998-04-14
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Expires: 2016-02-05
Abstract
Abstract A semiconductor dynamic random access memory device has a memory cell array fabricated on a silicon-on-insulator region and peripheral and interface circuits fabricated on a bulk region; even if the circuit components of the peripheral circuit are increased together with the memory cells, the bulk region effectively radiates the heat generated by the peripheral and interface circuits, thereby preventing the memory cells from a temperature rise.
Inventors
- 👤 Takaho Tanigawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:53
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10D; H10D86/00; H10D86/201
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
104 words
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer from a second semiconductor layer, comprising: a memory cell array fabricated on said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information; an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device; and a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information therebetween and having first logic circuits fabricated on said bulk region.
Claim 2
Dependent Claim
104 words
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer from a second semiconductor layer, comprising: a memory cell array fabricated on said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information; an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device; and a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information therebetween and having first logic circuits fabricated on said bulk region.
Claim 3
Dependent Claim
115 words
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer of about 10 nanometers to 100 nanometers thick from a second semiconductor layer, said device comprising: a memory cell array fabricated on said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information; an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device; and a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information there between and having first logic circuits fabricated on said bulk region.
Claim 4
Dependent Claim
115 words
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer of about 10 nanometers to 100 nanometers thick from a second semiconductor layer, said device comprising: a memory cell array fabricated on said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information; an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device; and a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information there between and having first logic circuits fabricated on said bulk region.
Claim 5
Dependent Claim
27 words
The semiconductor memory device as set forth in claim 1, in which said memory cell array is formed by a plurality of dynamic random access memory cells.
Claim 6
Dependent Claim
114 words
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer from a second semiconductor layer, said device comprising: a memory cell array fabricated on said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information; an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device; and a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information therebetween and having address decoders, selectors, controllers for an addressing system and sense amplifiers fabricated on said bulk region.
Claim 7
Dependent Claim
114 words
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer from a second semiconductor layer, said device comprising: a memory cell array fabricated on said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information; an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device; and a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information therebetween and having address decoders, selectors, controllers for an addressing system and sense amplifiers fabricated on said bulk region.
Claim 8
Dependent Claim
142 words
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer from a second semiconductor layer, said first semiconductor layer having a thin portion ranging between about 10 nanometers thick and 100 nanometers thick and a thick portion ranging between about 100 nanometers thick and 150 nanometers thick, said device comprising: a memory cell array fabricated on said thin portion of said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information; an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device; and a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information therebetween and having first logic circuits fabricated on said bulk region.
Claim 9
Dependent Claim
142 words
A semiconductor memory device fabricated on a semiconductor substrate including a bulk region and a semiconductor-on-insulator region having an insulating layer isolating a first semiconductor layer from a second semiconductor layer, said first semiconductor layer having a thin portion ranging between about 10 nanometers thick and 100 nanometers thick and a thick portion ranging between about 100 nanometers thick and 150 nanometers thick, said device comprising: a memory cell array fabricated on said thin portion of said first semiconductor layer in said semiconductor-on-insulator region for storing pieces of data information; an interface circuit fabricated on said bulk region for transferring said pieces of data information to an external device; and a peripheral circuit coupled between said memory cell array and said interface circuit for selectively transferring said pieces of data information therebetween and having first logic circuits fabricated on said bulk region.
Claim 10
Dependent Claim
29 words
The semiconductor memory device as set forth in claim 5, in which said peripheral circuit further has second logic circuits fabricated on said thick portion in said semiconductor-on-insulator region.
Claim 11
Dependent Claim
34 words
The semiconductor memory device as set forth in claim 6, in which said first logic circuits include address decoders, selectors and controllers for an addressing system, and said second logic circuits include sense amplifiers.
Claim 12
Dependent Claim
52 words
The semiconductor memory device as set forth in claim 6, in which said second logic circuits includes at least one field effect transistor having source and drain regions deeper than source and drain regions of a field effect transistor forming a part of a memory cell incorporated in said memory cell array.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-04-13 | 2001-10-13 | 2002-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-13 | 2005-10-13 | 2006-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-13 | 2009-10-13 | 2010-04-14 | $7700.00 | Window Closed / Lapsed |