US5732016A
Expired / Lapsed
US
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Memory cell structure in a magnetic random access memory and a method for fabricating thereof
Assignee: Everspin Technologies Inc
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Filing: 1996-07-02
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Granted: 1998-03-24
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Expires: 2016-07-02
Abstract
Abstract A magnetic random access memory (MRAM) cell structure (10) with a portion of giant magnetoresistive (GMR) material (11), around which single or multiple word line (12) is wound, is provided. Magnetic field generated by word current (13, 14) superimposed in portion of GMR material (11) so that a total strength of magnetic field increases proportionally. The same word current is passed through the portion of GMR material (11) multiple times, thus producing equivalent word field by many times as large word current in a conventional MRAM cell.
Inventors
- 👤 Eugene Chen
- 👤 Saied N. Tehrani
- 👤 Herbert Goronkin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:44
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/02; G11C11/14; H; H10; H10B; H10B61/00; H10N; H10N50/00; H10N50/10
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
50 words
A memory cell structure in a magnetic random access memory comprising: a portion of magnetic material; and a conductor, which has a first leg on one side of the portion, a second leg on another side of the portion and a connecting bight, for applying magnetic field to the portion.
Claim 2
Dependent Claim
50 words
A memory cell structure in a magnetic random access memory comprising: a portion of magnetic material; and a conductor, which has a first leg on one side of the portion, a second leg on another side of the portion and a connecting bight, for applying magnetic field to the portion.
Claim 3
Dependent Claim
21 words
The memory cell structure in said magnetic random access memory of claim 1 wherein the magnetic material includes giant magnetoresistive material.
Claim 4
Dependent Claim
28 words
The memory cell structure in said magnetic random access memory of claim 1 wherein the conductor further includes a conductor portion wound around the portion of magnetic material.
Claim 5
Dependent Claim
29 words
The memory cell structure in said magnetic random access memory of claim 1 wherein the portion of magnetic material further includes a plurality of the portions of magnetic material.
Claim 6
Dependent Claim
28 words
The memory cell structure in said magnetic random access memory of claim 4 wherein the plurality of the portions of magnetic material are arranged on the same plane.
Claim 7
Dependent Claim
28 words
The memory cell structure in said magnetic random access memory of claim 4 wherein the conductor further includes a conductor portion wound around the portion of magnetic material.
Claim 8
Dependent Claim
28 words
The memory cell structure in said magnetic random access memory of claim 6 wherein the plurality of the portions of magnetic material are arranged on the same plane.
Claim 9
Dependent Claim
40 words
The memory cell structure in said magnetic random access memory, of claim 1 further including a flux concentrators placed near the conductor on opposite side of portion of magnetic material, for concentrating magnetic flux to the portion of magnetic material.
Claim 10
Dependent Claim
29 words
The memory cell structure in said magnetic random access memory of claim 8 further including a dielectric layer inserted between the flux concentrator and the portion of magnetic material.
Claim 11
Dependent Claim
29 words
The memory cell structure in said magnetic random access memory of claim 3 further including flux concentrators, placed near the conductor on opposite side of portion of magnetic material.
Claim 12
Dependent Claim
29 words
The memory cell structure in said magnetic random access memory of claim 10 further including a dielectric layer inserted between the flux concentrator and the portion of magnetic material.
Claim 13
Dependent Claim
29 words
The memory cell structure in said magnetic random access memory of claim 7 further including flux concentrators, placed near the conductor on opposite side of portion of magnetic material.
Claim 14
Dependent Claim
29 words
The memory cell structure in said magnetic random access memory of claim 12 further including a dielectric layer inserted between the flux concentrator and the portion of magnetic material.
Claim 15
Dependent Claim
57 words
A memory cell structure in said magnetic random access memory comprising: a flux concentrator for concentrating magnetic flux; a conductor having a first leg on one side of the flux concentrator, a second leg on another side of the flux concentrator and a connecting bight; and a portion of magnetic material magnetically coupled to the flux concentrator.
Claim 16
Dependent Claim
57 words
A memory cell structure in said magnetic random access memory comprising: a flux concentrator for concentrating magnetic flux; a conductor having a first leg on one side of the flux concentrator, a second leg on another side of the flux concentrator and a connecting bight; and a portion of magnetic material magnetically coupled to the flux concentrator.
Claim 17
Dependent Claim
26 words
The memory cell structure in said magnetic random access memory of claim 14 wherein the conductor further includes a conductor portion wound around the flux concentrator.
Claim 18
Dependent Claim
25 words
The memory cell structure in said magnetic random access memory of claim 14 wherein the flux concentrator further includes a plurality of the flux concentrator.
Claim 19
Dependent Claim
26 words
The memory cell structure in said magnetic random access memory of claim 16 wherein the plurality of the flux concentrators are arranged on the same plane.
Claim 20
Dependent Claim
26 words
The memory cell structure in said magnetic random access memory of claim 17 wherein the conductor further includes a conductor portion wound around the flux concentrator.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-23 | 2001-09-22 | 2002-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-23 | 2005-09-22 | 2006-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-23 | 2009-09-22 | 2010-03-24 | $7700.00 | Window Closed / Lapsed |