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US5723974A Expired / Lapsed US ⏱️ 0.0 years remaining

Monolithic power converter with a power switch as a current sensing element

Assignee: Elantec Semiconductor LLC
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Filing: 1995-11-21
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Granted: 1998-03-03
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Expires: 2015-11-21
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Abstract

Abstract A monolithic power control circuit is disclosed that includes a switching element and a control circuit that senses a voltage drop across the switching element and that adjusts a duty cycle of the switching element. The monolithic circuit includes a compensation circuit that adjusts a contribution of the sensed voltage drop across the switching element in response to temperature changes of the switching element.

Inventors

  • 👤 Richard L. Gray

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 14:48
CPC Classifications
H; H02; H02M; H02M3/00; H02M3/02; H02M3/04; H02M3/10; H02M3/145; H02M3/155; H02M3/156; G; G01; G01R; G01R19/00; G01R19/0092; G05; G05F; G05F1/00; G05F1/10; G05F1/46; G05F1/462; G05F1/465; H02M1/00; H02M1/0003; H02M1/0009; Y; Y10; Y10S; Y10S323/00; Y10S323/907

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 144 words
A monolithic power control circuit, comprising: a power switching transistor that provides a voltage to drive an input node of a filter circuit; a control circuit that senses a voltage drop across the power switching transistor and that provides a control signal to the power switching transistor that adjusts a duty cycle of the power switching transistor according to a contribution of the voltage drop across the power switching transistor and a difference in a voltage from an output node of the filter circuit and a predetermined voltage value; and a compensation circuit providing a compensation signal to the control circuit to enable the control circuit to adjust the contribution of the voltage drop across the power switching transistor so that the control signal modulates the duty cycle of the power switching transistor element in response to temperature changes of the power switching transistor.
Claim 2
Dependent Claim 144 words
A monolithic power control circuit, comprising: a power switching transistor that provides a voltage to drive an input node of a filter circuit; a control circuit that senses a voltage drop across the power switching transistor and that provides a control signal to the power switching transistor that adjusts a duty cycle of the power switching transistor according to a contribution of the voltage drop across the power switching transistor and a difference in a voltage from an output node of the filter circuit and a predetermined voltage value; and a compensation circuit providing a compensation signal to the control circuit to enable the control circuit to adjust the contribution of the voltage drop across the power switching transistor so that the control signal modulates the duty cycle of the power switching transistor element in response to temperature changes of the power switching transistor.
Claim 3
Dependent Claim 84 words
The monolithic power control circuit of claim 1, wherein the compensation circuit includes a dummy power switching transistor having an internal resistance that proportionally mimics changes in an internal resistance of the power switching transistor, wherein the dummy power switching transistor is coupled to provide the compensation signal to cause the control circuit to adjust the contribution of the voltage drop across the power switching transistor to compensate for changes in the internal resistance of the power switching transistor due to the temperature changes.
Claim 4
Dependent Claim 136 words
The monolithic power control circuit of claim 2, wherein the compensation circuit comprises: a first comparator having inputs receiving a voltage drop across the dummy power switching transistor, and having an output; a second comparator having connected to a voltage source, and having an output; a multiplier circuit having an input coupled to the output of the first comparator, and having a gain adjust input and an output; a summing circuit having a first input connected to the output of the second comparator, a second input connected to the output of the multiplier circuit, and an output coupled to provide the compensation signal; and a capacitor having a first terminal coupled to the gain adjust input of the multiplier circuit and to receive the compensation signal, and having a second terminal connected to a common node.
Claim 5
Dependent Claim 136 words
The monolithic power control circuit of claim 2, wherein the control circuit comprises: a first comparator having inputs receiving the voltage drop across the power switching transistor, and having an output; a multiplier circuit having an input coupled to the output of the first comparator, a gain adjust input coupled to receive the compensation signal from the compensation circuit, and having an output; a second comparator having a first input connected to the input of the filter circuit, a second input connected to a reference voltage, and having an output; and a summing circuit having a first input coupled to the output of the multiplier circuit, a second input coupled to the output of the second comparator and an output coupled to provide the control signal that adjusts the duty cycle of the power switching transistor.
Claim 6
Dependent Claim 43 words
The monolithic power control circuit of claim 2, wherein the dummy power switching transistor is contained within an area of a substrate containing the power switching transistor such that temperature in the power switching transistor matches temperature in the dummy power switching transistor.
Claim 7
Dependent Claim 155 words
A monolithic power control circuit, comprising: a power switching transistor having a source to drain path connected to an input node of a filter circuit, and having a gate; a control circuit having an input that receives the voltage from an output node of the filter circuit and provides a control signal to the gate of the power switching transistor, the control signal adjusting a duty cycle of the power switching transistor according to a variation of the voltage at the output node of the filter circuit from a predetermined voltage value; and compensation circuit comprising: a dummy power switching transistor having a source to drain path coupled to provide a compensation signal to the control circuit so that the control circuit further adjusts the control signal so that the duty cycle of the power switching transistor is adjusted to compensate for changes in internal resistance of the power switching transistor due to temperature changes.
Claim 8
Dependent Claim 155 words
A monolithic power control circuit, comprising: a power switching transistor having a source to drain path connected to an input node of a filter circuit, and having a gate; a control circuit having an input that receives the voltage from an output node of the filter circuit and provides a control signal to the gate of the power switching transistor, the control signal adjusting a duty cycle of the power switching transistor according to a variation of the voltage at the output node of the filter circuit from a predetermined voltage value; and compensation circuit comprising: a dummy power switching transistor having a source to drain path coupled to provide a compensation signal to the control circuit so that the control circuit further adjusts the control signal so that the duty cycle of the power switching transistor is adjusted to compensate for changes in internal resistance of the power switching transistor due to temperature changes.
Claim 9
Dependent Claim 87 words
The monolithic power control circuit of claim 6 wherein the control circuit further has inputs connected to the source and the drain of the power switching transistor to receive a voltage drop across the power switching transistor, wherein the voltage drop across the power switching transistor is adjusted by the compensation signal and summed with the difference between the voltage received from the output node of the filter circuit and the predetermined voltage value to provide the control signal to the gate of the power switching transistor.
Claim 10
Dependent Claim 150 words
The monolithic power control circuit of claim 7, wherein the control circuit comprises: a first comparator having inputs connected to the source and the drain of the power switching transistor to receive the voltage drop across the power switching transistor, and having an output; a multiplier circuit having an input coupled to the output of the first comparator, a gain adjust input coupled to receive the compensation signal from the compensation circuit, and having an output; a second comparator having a first input coupled to the output node of the filter circuit, a second input connected to receive the predetermined voltage value, and having an output; and a summing circuit having a first input coupled to the output of the multiplier circuit, a second input coupled to the output of the second comparator and an output coupled to provide the control signal to the gate of the power switching transistor.
Claim 11
Dependent Claim 141 words
The monolithic power control circuit of claim 8 wherein the compensation circuit further comprises: a first comparator having inputs connected to the source and the drain of the dummy power switching transistor, and having an output; a second comparator having inputs connected to a voltage source, and having an output; a multiplier circuit having an input coupled to the output of the first comparator, and having a gain adjust input and an output; a summing circuit having a first input connected to the output of the second comparator, a second input connected to the output of the multiplier circuit, and an output coupled to provide the compensation signal; and a capacitor having a first terminal coupled to the gain adjust input of the multiplier circuit and to receive the compensation signal, and having a second terminal connected to a common node.
Claim 12
Dependent Claim 43 words
The monolithic power control circuit of claim 9, wherein the dummy power switching transistor is contained within an area of a substrate containing the power switching transistor such that temperature in the power switching transistor matches temperature in the dummy power switching transistor.

References Cited (Backward Citations)

US3961208A Cited
US5229709A Cited
US5237262A Cited
US5488288A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-03-02 2001-09-01 2002-03-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-03-02 2005-09-01 2006-03-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-03-02 2009-09-01 2010-03-03 $7700.00 Window Closed / Lapsed

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