Abstract Methods for improving adhesion between various materials utilized in the fabrication of integrated circuits. A first method relates to improving adhesion between a silicon nitride layer and a silicon dioxide layer. The method includes treating a surface of the silicon dioxide layer with a nitrogen plasma in a reactive ion etching process prior to depositing the silicon nitride film on the surface of the silicon dioxide layer. A second method relates to improving adhesion between a silicon nitride layer and a polyimide layer. The method includes the step of treating a surface of the silicon nitride layer with a oxygen/argon plasma in a reactive ion etching process prior to depositing the polyimide layer film on the surface of the silicon nitride layer. A third method relates to improving adhesion between a photoresist layer and a metal. The method includes the step of treating a surface of the photoresist layer with a oxygen/argon plasma in a reactive ion etching process prior to depositing the metal on the surface of the photoresist layer.
A method for improving adhesion between a silicon nitride layer and a silicon dioxide layer comprising a step of treating a surface of the silicon dioxide layer with a nitrogen plasma in an etching process prior to depositing the silicon nitride layer on said surface of the silicon dioxide layer.
Claim 2
Independent Claim
50 words
A method for improving adhesion between a silicon nitride layer and a silicon dioxide layer comprising a step of treating a surface of the silicon dioxide layer with a nitrogen plasma in an etching process prior to depositing the silicon nitride layer on said surface of the silicon dioxide layer.
Claim 3
Dependent Claim
15 words
The method of claim 1, wherein said etching process is a reactive ion etching process.
Claim 4
Dependent Claim
22 words
The method of claim 2, wherein a plurality of nitrogen ions are embedded in said silicon dioxide layer by said etching process.
Claim 5
Dependent Claim
24 words
The method of claim 2, wherein said reactive ion process utilizes a plasma etcher operating at a DC bias of at least 800 volts.
Claim 6
Dependent Claim
12 words
The method of claim 1, wherein said nitrogen plasma comprises 100% nitrogen.
Claim 7
Dependent Claim
17 words
The method of claim 1, wherein said nitrogen plasma has a flow rate ranging from 5-500 sccm.