US5711998A
Expired / Lapsed
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Method of polycrystalline silicon hydrogenation
Assignee: Lam Research Corp
•
Filing: 1996-05-31
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Granted: 1998-01-27
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Expires: 2016-05-31
Abstract
Abstract A method of hydrogenating poly-Si in an electrical device including the step of placing a substrate having a poly-Si component in a radio frequency induced low pressure, high density plasma reactor. The method further includes the step of introducing into the radio frequency induced low pressure, high density plasma reactor a gas including at least hydrogen or deuterium. The hydrogenation of the poly-Si component is accomplished by striking a plasma in the radio frequency induced low pressure, high density plasma reactor under conditions that promote hydrogenation of the poly-Si component.
Inventors
- 👤 Paul Kevin Shufflebotham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 20:24
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/94
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
77 words
A method of hydrogenating silicon in an electrical device, said method comprising the following steps: placing a substrate having a silicon component in a radio frequency induced low pressure, inductively coupled plasma reactor; introducing into said radio frequency induced low pressure, inductively coupled plasma reactor a gas including at least hydrogen or deuterium; and striking a plasma in said radio frequency induced low pressure, inductively coupled plasma reactor under conditions that promote hydrogenation of said silicon component.
Claim 2
Independent Claim
77 words
A method of hydrogenating silicon in an electrical device, said method comprising the following steps: placing a substrate having a silicon component in a radio frequency induced low pressure, inductively coupled plasma reactor; introducing into said radio frequency induced low pressure, inductively coupled plasma reactor a gas including at least hydrogen or deuterium; and striking a plasma in said radio frequency induced low pressure, inductively coupled plasma reactor under conditions that promote hydrogenation of said silicon component.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein said radio frequency induced low pressure, inductively coupled plasma reactor is a high density plasma reactor.
Claim 4
Dependent Claim
29 words
The method of claim 1, wherein said step of striking the plasma is conducted under conditions such that the substrate's temperature is maintained at a temperature to promote hydrogenation.
Claim 5
Dependent Claim
30 words
The method of claim 3, further comprising a step of striking the plasma is conducted under conditions such that the substrate's temperature is maintained between about 100° and 350° C.
Claim 6
Dependent Claim
29 words
The method of claim 4, wherein the step of striking the plasma is conducted under conditions such that the substrate's temperature is maintained between about 250° and 350° C.
Claim 7
Dependent Claim
27 words
The method of claim 5, wherein the step of striking the plasma is conducted under conditions such that the substrate's temperature is maintained at about 300° C.
Claim 8
Dependent Claim
27 words
The method of claim 1, wherein the step of introducing a gas into the inductively coupled plasma reactor is accomplished with the assistance of a turbomolecular pump.
Claim 9
Dependent Claim
32 words
The method of claim 1 wherein the step of introducing a gas into the inductively coupled plasma reactor provides a gas pressure in the reactor of between about 0.1 and 50 milliTorr.
Claim 10
Dependent Claim
32 words
The method of claim 8 wherein the step of introducing a gas into the inductively coupled plasma reactor provides a gas pressure in the reactor of between about 1 and 30 milliTorr.
Claim 11
Dependent Claim
29 words
The method of claim 9 wherein the step of introducing a gas into the inductively coupled plasma reactor provides a gas pressure in the reactor of about 5 milliTorr.
Claim 12
Dependent Claim
35 words
The method of claim 1, wherein said step of striking a plasma involves supplying radio frequency power to a inductively coupled plasma reactor coil electrode at a power of between about 300 and 2000 Watts.
Claim 13
Dependent Claim
31 words
The method of claim 11, wherein said step of striking a plasma involves supplying radio frequency power to the coil electrode at a power of between about 500 and 2000 Watts.
Claim 14
Dependent Claim
28 words
The method of claim 12, wherein said step of striking a plasma involves supplying radio frequency power to the coil electrode at a power of about 1000 Watts.
Claim 15
Dependent Claim
30 words
The method of claim 1, further comprising a step of applying a bias to an electrode located below said substrate to increase the momentum of charged species striking the substrate.
Claim 16
Dependent Claim
23 words
The method of claim 14 wherein said electrode located below said substrate is provided with power at between about 0 and 500 Watts.
Claim 17
Dependent Claim
23 words
The method of claim 15 wherein said electrode located below said substrate is provided with power at between about 50 and 200 Watts.
Claim 18
Dependent Claim
20 words
The method of claim 16 wherein said electrode located below said substrate is provided with power at about 100 Watts.
Claim 19
Dependent Claim
33 words
The method of claim 1, wherein said substrate is exposed to a plasma containing at least energetic hydrogen or deuterium species for a period of time equal to at least about 10 minutes.
Claim 20
Dependent Claim
33 words
The method of claim 18, wherein said substrate is exposed to the plasma containing at least energetic hydrogen or deuterium species for a period of time equal to at least about 45 minutes.
Claim 21
Dependent Claim
26 words
The method of claim 1, wherein said step of striking a plasma is performed after the electrical device has been completely fabricated except for hydrogenating silicon.
Claim 22
Independent Claim
136 words
A method of hydrogenating silicon in an electrical device, said method comprising the following steps: placing a substrate having a silicon element in an inductive plasma reactor; introducing into the inductive plasma reactor a gas including at least hydrogen or deuterium; and striking a plasma in said inductive plasma reactor under conditions that promote hydrogenation of said silicon element, wherein said step of striking the plasma comprises a step of heating the substrate to a temperature of between about 100° and 350° C., said step of introducing a gas into the inductive plasma reactor provides a gas pressure in the reactor of between about 0.1 and 50 milliTorr and said substrate is exposed to the plasma containing at least energetic hydrogen or deuterium species for a period of time equal to at least about 10 minutes.
Claim 23
Independent Claim
136 words
A method of hydrogenating silicon in an electrical device, said method comprising the following steps: placing a substrate having a silicon element in an inductive plasma reactor; introducing into the inductive plasma reactor a gas including at least hydrogen or deuterium; and striking a plasma in said inductive plasma reactor under conditions that promote hydrogenation of said silicon element, wherein said step of striking the plasma comprises a step of heating the substrate to a temperature of between about 100° and 350° C., said step of introducing a gas into the inductive plasma reactor provides a gas pressure in the reactor of between about 0.1 and 50 milliTorr and said substrate is exposed to the plasma containing at least energetic hydrogen or deuterium species for a period of time equal to at least about 10 minutes.
Claim 24
Dependent Claim
82 words
The method of claim 21 wherein said step of striking the plasma comprises a step of heating the substrate to a temperature of between about 250° and 350° C., said step of introducing a gas into the inductive plasma reactor provides a gas pressure in the reactor of between about 1 and 30 milliTorr and said substrate is exposed to the plasma containing at least energetic hydrogen or deuterium species for a period of time equal to at least about 45 minutes.
Claim 25
Dependent Claim
82 words
A method of claim 22 wherein said step of striking the plasma comprises a step of heating the substrate to a temperature of between about 100° and 350° C., said step of introducing a gas into the inductive plasma reactor provides a gas pressure in the reactor of between about 1 and 30 milliTorr and said substrate is exposed to the plasma containing at least energetic hydrogen or deuterium species for a period of time equal to at least about 45 minutes.
Claim 26
Dependent Claim
72 words
A method of claim 23 wherein said step of striking the plasma comprises a step of heating the substrate to a temperature of between about 250° and 350° C. and supplying radio frequency power to a coil at a power of about 1000 Watts and said substrate is exposed to the plasma containing at least energetic hydrogen or deuterium species for a period of time equal to at least about 45 minutes.
Claim 27
Independent Claim
100 words
A method of preparing an electronic device having multiple thin film transistors, each having a silicon gate electrode, the method comprising the following steps: forming said multiple transistors on a substrate; providing said substrate with multiple transistors to a radio frequency induced low pressure, inductively coupled plasma reactor; introducing into the radio frequency induced low pressure, inductively coupled plasma reactor a gas including at least hydrogen or deuterium; striking a plasma in said radio frequency induced low pressure, inductively coupled plasma reactor under high density, low pressure conditions that promote hydrogenation of said silicon gate electrodes of the multiple transistors.
Claim 28
Independent Claim
100 words
A method of preparing an electronic device having multiple thin film transistors, each having a silicon gate electrode, the method comprising the following steps: forming said multiple transistors on a substrate; providing said substrate with multiple transistors to a radio frequency induced low pressure, inductively coupled plasma reactor; introducing into the radio frequency induced low pressure, inductively coupled plasma reactor a gas including at least hydrogen or deuterium; striking a plasma in said radio frequency induced low pressure, inductively coupled plasma reactor under high density, low pressure conditions that promote hydrogenation of said silicon gate electrodes of the multiple transistors.
Claim 29
Dependent Claim
14 words
The method of claim 25, wherein said electronic device is a flat panel display.
Claim 30
Dependent Claim
13 words
The method of claim 25, wherein said electronic device is a light valve.
Claim 31
Dependent Claim
26 words
The method of claim 25, wherein said substrate includes one or more materials selected from the group consisting of glass, quartz, silicon, gallium arsenide, and polyimide.
Claim 32
Dependent Claim
33 words
The method of claim 25, further comprising a step of striking a plasma is conducted under conditions such that the substrate is heated to a temperature of between about 100° and 350° C.
Claim 33
Dependent Claim
32 words
The method of claim 25 wherein the step of introducing a gas into the inductively coupled plasma reactor provides a gas pressure in the reactor of between about 0.1 and 50 milliTorr.
Claim 34
Dependent Claim
34 words
The method of claim 25, wherein said step of striking a plasma involves supplying radio frequency power to said inductively coupled plasma reactor electrode at a power of between about 300 and 2000 Watts.
Claim 35
Dependent Claim
33 words
The method of claim 25, wherein said substrate is exposed to a plasma containing at least energetic hydrogen or deuterium species for a period of time equal to at least about 10 minutes.
Claim 36
Dependent Claim
33 words
The method of claim 32, wherein said substrate is exposed to the plasma containing at least energetic hydrogen or deuterium species for a period of time equal to at least about 45 minutes.
Claim 37
Dependent Claim
28 words
The method of claim 32, wherein said step of striking a plasma is performed after the electrical device has been completely fabricated except for hydrogenation of the polysilicon.
Claim 38
Dependent Claim
27 words
The method of claim 32, wherein said steps of striking a plasma is performed after substantially all other high temperature steps have been performed on said substrate.
Claim 39
Dependent Claim
11 words
The method of claim 1, wherein said silicon component includes polysilicon.
Claim 40
Dependent Claim
11 words
The method of claim 21, wherein said silicon element includes polysilicon.
Claim 41
Dependent Claim
12 words
The method of claim 25, wherein said silicon gate electrode includes polysilicon.
References Cited (Backward Citations)
US5314603A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-26 | 2001-07-28 | 2002-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-26 | 2005-07-28 | 2006-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-26 | 2009-07-28 | 2010-01-27 | $7700.00 | Window Closed / Lapsed |