US5710438A
Expired / Lapsed
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Semiconductor device with a silicide layer
Assignee: Mitsubishi Electric Corp
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Filing: 1995-10-31
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Granted: 1998-01-20
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Expires: 2015-10-31
Abstract
Abstract To form a silicide layer excellent in flatness, uniform in film thickness, and less in junction leak, by destroying the natural oxide film which adversely affects a formation of silicide layer of cobalt or nickel. A cobalt layer (7) is formed in a film thickness of 20 nm or less on an electrode layer (4A) of a gate electrode (4) and on source/drain diffusion layers (1, 2), and a nitrogen (8) is injected by the ion implantation at a density of about 1E15/cm 3 with an injection energy of 10 keV or more. At this time, the nitrogens (8) destroy the natural oxide film existing in the interface of the cobalt layer (7) and electrode layer (4A), and in the interface of the cobalt layer (7) and the source/drain diffusion layers (1, 2), and distribute deeply into the electrode layer (4A) and the source/drain diffusion layers (1, 2). Later, by a silicide forming reaction of cobalt, a silicide layer (6) is formed. Since the natural oxide film does not exist, the silicide forming reaction proceeds uniformly. Instead of the nitrogen (8), fluorine or silicon may be also used.
Inventors
- 👤 Hidekazu Oda
- 👤 Takashi Kuroi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 04:59
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/01; H10D30/021; H10D30/0223; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/60; H10D64/62; H10D64/66; H10D64/661; H10D64/662; H10D64/663
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
112 words
A semiconductor device comprising: a semiconductor substrate of a first conductive type; an insulating film formed on a principal surface of said semiconductor substrate; an electrode layer formed on an upper surface of said insulating film; a silicide layer formed on an upper surface of said electrode layer; and an impurity layer distributed inside said silicide layer and distributed also from an interface of said silicide layer and said electrode layer toward an inside of said electrode layer, wherein said electrode layer and said silicide layer form a gate electrode of a transistor, and said silicide layer corresponds to a layer of a metal as a non-reducing diffusion seed formed as silicide.
Claim 2
Dependent Claim
112 words
A semiconductor device comprising: a semiconductor substrate of a first conductive type; an insulating film formed on a principal surface of said semiconductor substrate; an electrode layer formed on an upper surface of said insulating film; a silicide layer formed on an upper surface of said electrode layer; and an impurity layer distributed inside said silicide layer and distributed also from an interface of said silicide layer and said electrode layer toward an inside of said electrode layer, wherein said electrode layer and said silicide layer form a gate electrode of a transistor, and said silicide layer corresponds to a layer of a metal as a non-reducing diffusion seed formed as silicide.
Claim 3
Dependent Claim
141 words
A semiconductor device of claim 1, further comprising: a diffusion layer of a second conductive type of said transistor formed toward an inside of said semiconductor substrate from a part of a portion forming an interface with said insulating film and other part than said portion forming said interface with said insulating film, in said principal surface of said semiconductor substrate; a new silicide layer formed toward an inside of said diffusion layer from said principal surface of said semiconductor substrate being other than said portion forming said interface with said insulating film; and a new impurity layer distributed inside said new silicide layer, and also distributed toward an inside of said diffusion layer from an interface of said new silicide layer and said diffusion layer, wherein said new impurity layer consists essentially of a same material as said impurity layer.
Claim 4
Dependent Claim
32 words
A semiconductor device of claim 2, wherein said impurity layer and said new impurity layer consist essentially of a material smaller in activation energy than impurity ions injected in said diffusion layer.
Claim 5
Dependent Claim
19 words
A semiconductor device of claim 3, wherein said impurity layer and said new impurity layer consist essentially of nitrogen.
Claim 6
Dependent Claim
47 words
A semiconductor device of claim 4, wherein said impurity layer and said new impurity layer comprise nitrogens produced when injecting a same element as said semiconductor substrate, and the distribution density of said nitrogens produced when injecting said element ranges from 1E16/cm 3 to 1E20/cm 3 .
Claim 7
Dependent Claim
19 words
A semiconductor device of claim 3, wherein said impurity layer and said new impurity layer consist essentially of fluorine.
Claim 8
Dependent Claim
145 words
A field effect transistor comprising: a semiconductor substrate of a first conductive type; a gate oxide film formed on a principal surface of said semiconductor substrate; a gate electrode formed on an upper surface of said gate oxide film, source/drain diffusion layers of a second conductive type formed by injecting ions in said principal surface of said semiconductor substrate; a silicide layer of a metal as a non-reducing diffusion seed formed in said gate electrode; an other silicide layer of a metal as said non-reducing diffusion seed formed in said source/drain diffusion layers; an impurity layer distributed inside said silicide layer and said gate electrode, said impurity layer consisting essentially of an element smaller in activation energy than said ions; and an other impurity layer distributed inside said other silicide layer and said source/drain diffusion layers, said other impurity layer consisting essentially of said element.
Claim 9
Dependent Claim
145 words
A field effect transistor comprising: a semiconductor substrate of a first conductive type; a gate oxide film formed on a principal surface of said semiconductor substrate; a gate electrode formed on an upper surface of said gate oxide film, source/drain diffusion layers of a second conductive type formed by injecting ions in said principal surface of said semiconductor substrate; a silicide layer of a metal as a non-reducing diffusion seed formed in said gate electrode; an other silicide layer of a metal as said non-reducing diffusion seed formed in said source/drain diffusion layers; an impurity layer distributed inside said silicide layer and said gate electrode, said impurity layer consisting essentially of an element smaller in activation energy than said ions; and an other impurity layer distributed inside said other silicide layer and said source/drain diffusion layers, said other impurity layer consisting essentially of said element.
Claim 10
Dependent Claim
153 words
A field effect transistor comprising: a silicon substrate of first conductive type; a gate oxide film formed on a principal surface of said silicon substrate; a gate electrode formed on an upper surface of said gate oxide film; source/drain diffusion layers of a second conductive type formed by injecting ions into said principal surface of said silicon substrate; a silicide layer of a metal as a non-reducing diffusion seed formed in said gate electrode; an other silicide layer of a metal as said non-reducing diffusion seed formed in said source/drain diffusion layers; a nitrogen layer distributed inside said silicide layer and said gate electrode, said nitrogen layer having a density in a range from 1E16/cm 3 to 1E20/cm 3 ; and an other nitrogen layer distributed inside said other silicide layer and said source/drain diffusion layers, said other nitrogen layer having a density in a range from 1E16/cm 3 to 1E20/cm 3 .
Claim 11
Dependent Claim
153 words
A field effect transistor comprising: a silicon substrate of first conductive type; a gate oxide film formed on a principal surface of said silicon substrate; a gate electrode formed on an upper surface of said gate oxide film; source/drain diffusion layers of a second conductive type formed by injecting ions into said principal surface of said silicon substrate; a silicide layer of a metal as a non-reducing diffusion seed formed in said gate electrode; an other silicide layer of a metal as said non-reducing diffusion seed formed in said source/drain diffusion layers; a nitrogen layer distributed inside said silicide layer and said gate electrode, said nitrogen layer having a density in a range from 1E16/cm 3 to 1E20/cm 3 ; and an other nitrogen layer distributed inside said other silicide layer and said source/drain diffusion layers, said other nitrogen layer having a density in a range from 1E16/cm 3 to 1E20/cm 3 .
References Cited (Backward Citations)
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