Spin valve magnetoresistive transducers having permanent magnets

Claim 1

A magnetoresistive sensor comprising: a substrate; a dielectric layer disposed on said substrate; a first shield layer of high permeability for slimming isolated pulses sensed by the magnetoresistive sensor; a first dielectric gap layer deposited on said dielectric layer; a high coercivity first permanent magnetic layer formed above said dielectric gap layer; a first underlayer disposed between said dielectric gap layer and said first permanent magnet layer for providing an orientation to said first permanent magnet layer; a first magnetoresistive layer deposited over said first permanent magnet layer, said first magnetoresistive layer being pinned by said first permanent magnet layer; a first enhancing layer of cobalt formed on said first magnetoresistive layer for improving the ΔR/R of said magnetoresistive sensor; a conductive spacer disposed on said first enhancing layer; a second enhancing layer of cobalt formed on said conductive spacer; a second magnetoresistive layer deposited over said second enhancing layer; a second underlayer having spaced segments disposed over said second magnetoresistive layer, said segments of said second underlayer having inner and outer ends; a second permanent magnet layer having spaced portions formed over said spaced segments of said second underlayer, said spaced portions of said second permanent magnet layer having inner and outer ends in alignment with said ends of said segments of said second underlayer, said second permanent magnet means having a lower coercivity than that of said first permanent magnet layer and providing longitudinal bias to said second magnetoresistive layer; spaced conductive leads deposited over said portions of said second permanent magnet layer and adjacent to said inner ends of said second underlayer segments and said inner ends of said spaced portions of said second permanent magnet; a second dielectric gap formed over and adjacent to said conductive leads; and a second shield layer deposited over said second dielectric gap; wherein changes in the resistivity of the sensor are produced as a result of rotation of the direction of magnetization in said second magnetoresistive layer.