← Back to Patent Explorer
US5707899A Expired / Lapsed US ⏱️ 0.0 years remaining

SOI structure with a deep thin oxide layer prepared by ION implantation at high energy followed by thermal treatment

Assignee: Istituto Guido Donegani SpA
•
Filing: 1994-09-07
•
Granted: 1998-01-13
•
Expires: 2014-09-07
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A process for preparing an SOI structure with a deep thin oxide layer which comprises, in succession, a first ion implantation at an oxygen fluence within the range of 10 15 -10 16 ions/cm 2 , thermal treatment at a temperature within the range of 600°-900° C., a second ion implantation at an oxygen fluence within the range of 2×10 17 -8×10 17 ions/cm 2 , and a final thermal treatment at a temperature within the range of 1150°-1400° C.

Inventors

  • 👤 Gianfranco Cerofolini
  • 👤 Laura Meda

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 04:52
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10W; H10W10/00; H10W10/10; H10W10/181

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 89 words
A process for preparing an SOI structure with a deep thin oxide layer, having a thickness between 80 nm and 150 nm, comprising the following stages in succession: a first ion implantation at an oxygen fluence within the range of 10 15 -10 16 ions/cm 2 ; thermal treatment at a temperature within the range of 600°-900° C.; a second ion implantation at an oxygen fluence within the range of 2×10 17 -8×10 17 ions/cm 2 ; final thermal treatment at a temperature within the range of 1150°-1400° C.
Claim 2
Dependent Claim 89 words
A process for preparing an SOI structure with a deep thin oxide layer, having a thickness between 80 nm and 150 nm, comprising the following stages in succession: a first ion implantation at an oxygen fluence within the range of 10 15 -10 16 ions/cm 2 ; thermal treatment at a temperature within the range of 600°-900° C.; a second ion implantation at an oxygen fluence within the range of 2×10 17 -8×10 17 ions/cm 2 ; final thermal treatment at a temperature within the range of 1150°-1400° C.

References Cited (Backward Citations)

US4885257A Cited
US4676841A Cited
JPS62132344A Cited
US4749660A Cited
FR2616590A1 Cited
US4975126A Cited
US5238858A Cited
US5080730A Cited
US5143858A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-01-12 2001-07-14 2002-01-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-01-12 2005-07-14 2006-01-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-01-12 2009-07-14 2010-01-13 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag