US5700722A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming silicide plugs in semiconductor devices
Assignee: Sony Corp
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Filing: 1996-01-25
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Granted: 1997-12-23
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Expires: 2016-01-25
Abstract
Abstract A process for forming a uniform silicide plug inside an opening in a semiconductor to form fine contacts is disclosed wherein a silicon based material which is inserted into a hole formed in a substrate is reacted with a metal layer to form the contacts.
Inventors
- 👤 Hirofumi Sumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
144 words
A process for forming a silicide plug in a semiconductor device, which comprises the steps of: forming an opening in an interlayer insulating layer formed on a lower connection layer; depositing a single layer of a silicon based material on the interlayer insulating layer and inside said opening and then removing any of said silicon based material located above a top pane of said interlayer insulating layer; and depositing a metal layer from the group of metals consisting of zirconium, nickel, palladium, copper, gold and silver on the silicon based material deposited inside the opening while maintaining the silicon based material at a temperature at which said silicon based material reacts with said metal to diffuse the metal into the silicon based material, and thereby form a uniform silicide plug inside the opening through the reaction of said silicon based material and said metal.
Claim 2
Dependent Claim
144 words
A process for forming a silicide plug in a semiconductor device, which comprises the steps of: forming an opening in an interlayer insulating layer formed on a lower connection layer; depositing a single layer of a silicon based material on the interlayer insulating layer and inside said opening and then removing any of said silicon based material located above a top pane of said interlayer insulating layer; and depositing a metal layer from the group of metals consisting of zirconium, nickel, palladium, copper, gold and silver on the silicon based material deposited inside the opening while maintaining the silicon based material at a temperature at which said silicon based material reacts with said metal to diffuse the metal into the silicon based material, and thereby form a uniform silicide plug inside the opening through the reaction of said silicon based material and said metal.
Claim 3
Dependent Claim
37 words
A process for forming a silicide plug in a semiconductor device as claimed in claim 1, which further comprises the additional steps of: removing an unreacted portion of the metal layer; and heat treating the silicide plug.
Claim 4
Dependent Claim
24 words
The process of forming a silicide plug in a semiconductor device of claim 1, wherein the group of metals further comprises cobalt and hafnium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-22 | 2001-06-23 | 2001-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-22 | 2005-06-23 | 2005-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-22 | 2009-06-23 | 2009-12-23 | $7700.00 | Window Closed / Lapsed |