US5700601A — Photomask, manufacture of photomask, formation of…

Claim 1

Independent Claim 143 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, and a distance D between the center or a desired center line of said main pattern and that of said auxiliary pattern satisfies the relationship of D =bλ/NAm , where NAm is a mask-side numerical aperture of a projection lens, A is a wavelength of exposure light, and <b> is a coefficient in the range of 1.35 <b≦1.9.

Claim 2

Dependent Claim 143 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, and a distance D between the center or a desired center line of said main pattern and that of said auxiliary pattern satisfies the relationship of D =bλ/NAm , where NAm is a mask-side numerical aperture of a projection lens, A is a wavelength of exposure light, and <b> is a coefficient in the range of 1.35 <b≦1.9.

Claim 3

Dependent Claim 26 words

A photomask according to claim 1, wherein said main pattern is formed in a circular shape, and said auxiliary pattern is formed in an annular shape.

Claim 4

Dependent Claim 48 words

A photomask according to claim 1, wherein the width of said auxiliary pattern is expressed by the relationship of bλ/NAm, where NAm is a mask-side numerical aperture of a projection lens, λ is a wavelength of exposure light, and <b'> is a coefficient in the range of 0.07≦b'≦0.25.

Claim 5

Dependent Claim 134 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, and said auxiliary pattern is provided on an area of said photomask corresponding to an area of the projected main pattern which is located outwardly from an intermediate point between a first sub-peak and a second sub-peak generated around said projected main pattern and inwardly from said second sub-peak.

Claim 6

Dependent Claim 134 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, and said auxiliary pattern is provided on an area of said photomask corresponding to an area of the projected main pattern which is located outwardly from an intermediate point between a first sub-peak and a second sub-peak generated around said projected main pattern and inwardly from said second sub-peak.

Claim 7

Dependent Claim 26 words

A photomask according to claim 4, wherein said main pattern is formed in a circular shape, and said auxiliary pattern is formed in an annular shape.

Claim 8

Dependent Claim 48 words

A photomask according to claim 4, wherein the width of said auxiliary pattern is expressed by the relationship of b'λ/NAm, where NAm is a mask-side numerical aperture of a projection lens, λ is a wavelength of exposure light, and <b'> is a coefficient in the range of 0.07≦b'≦0.25.

Claim 9

Independent Claim 183 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, and a distance D between the center or a desired center line of said main pattern and that of said auxiliary pattern satisfies the relationship of D =bλ/NAm , where NAm is a mask-side numerical aperture of a projection lens, λ is a wavelength of exposure light, and <b> is a coefficient in the range of 1.35 <b≦1.9; (b) exposing a thin film made of a photoresist formed on a substrate using said photomask by projection optics; and (c) forming a pattern by development.

Claim 10

Independent Claim 183 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, and a distance D between the center or a desired center line of said main pattern and that of said auxiliary pattern satisfies the relationship of D =bλ/NAm , where NAm is a mask-side numerical aperture of a projection lens, λ is a wavelength of exposure light, and <b> is a coefficient in the range of 1.35 <b≦1.9; (b) exposing a thin film made of a photoresist formed on a substrate using said photomask by projection optics; and (c) forming a pattern by development.

Claim 11

Dependent Claim 32 words

A method of forming a pattern according to claim 7, wherein said exposure is performed under a condition that a coherence factor σ of said projection optics satisfies the relationship of σ≦0.3.

Claim 12

Independent Claim 174 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, and said auxiliary pattern is provided on an area of said photomask corresponding to an area of the projected main pattern which is located outwardly from an intermediate point between a first sub-peak and a second sub-peak generated around said projected main pattern and inwardly from said second sub-peak; (b) exposing a thin film made of a photoresist formed on a substrate using said photomask by projection optics; and (c) forming a pattern by development.

Claim 13

Independent Claim 174 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, and said auxiliary pattern is provided on an area of said photomask corresponding to an area of the projected main pattern which is located outwardly from an intermediate point between a first sub-peak and a second sub-peak generated around said projected main pattern and inwardly from said second sub-peak; (b) exposing a thin film made of a photoresist formed on a substrate using said photomask by projection optics; and (c) forming a pattern by development.

Claim 14

Dependent Claim 32 words

A method of forming a pattern according to claim 9, wherein said exposure is performed under a condition that a coherence factor σ of said projection optics satisfies the relationship of σ≦0.3.

Claim 15

Dependent Claim 110 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at an area of said photomask corresponding to a position where interference light beams from different two sides of a main pattern formed of said transparent area overlap each other.

Claim 16

Dependent Claim 110 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at an area of said photomask corresponding to a position where interference light beams from different two sides of a main pattern formed of said transparent area overlap each other.

Claim 17

Dependent Claim 64 words

A photomask according to claim 11, wherein the center of said auxiliary pattern is located at a position in which a distance D from said two sides of said main pattern satisfies the relationship of D=dλ/NAm, where NAm is a mask-side numerical aperture of a projection lens, λ is a wavelength of exposure light, and <d> is a coefficient in the range of 0.4≦d≦0.7.

Claim 18

Dependent Claim 148 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and one or a plurality of transparent auxiliary patterns having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position in which a distance S from the centers of said two main patterns satisfies the relationship of S=sλ/NAm, where NAm is a mask-side numerical aperture of a projection lens, λ is a wavelength of exposure light, and <s> is a coefficient in the range of 0.8≦s≦1.1.

Claim 19

Dependent Claim 148 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and one or a plurality of transparent auxiliary patterns having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position in which a distance S from the centers of said two main patterns satisfies the relationship of S=sλ/NAm, where NAm is a mask-side numerical aperture of a projection lens, λ is a wavelength of exposure light, and <s> is a coefficient in the range of 0.8≦s≦1.1.

Claim 20

Dependent Claim 125 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and one or a plurality of transparent auxiliary patterns having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position of said photomask corresponding to a position where first sub-peaks around main peaks of the projected main patterns are overlapped to each other.

Claim 21

Dependent Claim 125 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and one or a plurality of transparent auxiliary patterns having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position of said photomask corresponding to a position where first sub-peaks around main peaks of the projected main patterns are overlapped to each other.

Claim 22

Dependent Claim 127 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and one or a plurality of transparent auxiliary patterns having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position of said photomask corresponding to a position where diffraction light beams from said main patterns are overlapped to each other at the same phase angle.

Claim 23

Dependent Claim 127 words

A photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and one or a plurality of transparent auxiliary patterns having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position of said photomask corresponding to a position where diffraction light beams from said main patterns are overlapped to each other at the same phase angle.

Claim 24

Independent Claim 136 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of light as that of a main pattern is disposed at an area where an angle formed by intersections of desired two sides or extension lines thereof of said main pattern formed of said transparent area is less than 180° in said semitransparent area; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 25

Independent Claim 136 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of light as that of a main pattern is disposed at an area where an angle formed by intersections of desired two sides or extension lines thereof of said main pattern formed of said transparent area is less than 180° in said semitransparent area; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 26

Independent Claim 145 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of light as that of a main pattern and having a dimension being a resolution limit of projection optics or less is disposed at an area of said photomask corresponding to a position where interference light beams from different two sides of said main pattern formed of said transparent area overlap each other; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 27

Independent Claim 145 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of light as that of a main pattern and having a dimension being a resolution limit of projection optics or less is disposed at an area of said photomask corresponding to a position where interference light beams from different two sides of said main pattern formed of said transparent area overlap each other; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 28

Independent Claim 179 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and a transparent auxiliary pattern having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position in which a distance S from the centers of said two main patterns satisfies the relationship of S=sλ/NAm, where NAm is a mask-side numerical aperture of a projection lens, λ is a wavelength of exposure light, and <s> is a coefficient in the range of 0.8≦s≦1.1; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 29

Independent Claim 179 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and a transparent auxiliary pattern having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position in which a distance S from the centers of said two main patterns satisfies the relationship of S=sλ/NAm, where NAm is a mask-side numerical aperture of a projection lens, λ is a wavelength of exposure light, and <s> is a coefficient in the range of 0.8≦s≦1.1; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 30

Independent Claim 156 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and a transparent auxiliary pattern having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position of said photomask corresponding to a position where first sub-peaks around main peaks of the projected main patterns are overlapped to each other; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 31

Independent Claim 156 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and a transparent auxiliary pattern having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position of said photomask corresponding to a position where first sub-peaks around main peaks of the projected main patterns are overlapped to each other; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 32

Independent Claim 158 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and a transparent auxiliary pattern having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position of said photomask corresponding to a position where diffraction light beams from said main patterns are overlapped to each other at the same phase angle; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 33

Independent Claim 158 words

A method of forming a pattern comprising the steps of: (a) preparing a photomask, said photomask including a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein at least two main patterns each being formed of said transparent area are disposed, and a transparent auxiliary pattern having the same phase angle of light as that of said main pattern and having a dimension being a resolution limit of projection optics or less is disposed at a position of said photomask corresponding to a position where diffraction light beams from said main patterns are overlapped to each other at the same phase angle; (b) exposing a photoresist formed on a substrate by projection optics using said photomask; and (c) forming a pattern by development.

Claim 34

Independent Claim 284 words

A method of forming a pattern of a photomask comprising a semitransparent area and a transparent area for at least exposure light, in which a phase angle of a light beam passing through said semitransparent area is different from a phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having a same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, comprising the steps of: (a) determining said auxiliary pattern of the photomask used for pattern printing by projection optics using a mask pattern design system, said process of determining said auxiliary pattern comprising the steps of: (1) calculating, on the basis of data of at least two of the main patterns formed in said photomask and parameters representing an optical condition of said projection optics, a light intensity distribution of a projected image of said main pattern obtained by said projection optics, (2) determining an area where a light intensity is more than a specified value, excluding an area corresponding to said main pattern, on the basis of said light intensity distribution of the projected image and said main patterns, and (3) determining one or a plurality of auxiliary patterns on an area of said photomask corresponding to said area where the light intensity is more than said specified value when said area is determined, and (b) forming said main pattern and said determined auxiliary patterns on said photomask; and (c) projecting and exposing a pattern by projection optics using said photomask formed with said main pattern and said determined auxiliary patterns.

Claim 35

Independent Claim 284 words

A method of forming a pattern of a photomask comprising a semitransparent area and a transparent area for at least exposure light, in which a phase angle of a light beam passing through said semitransparent area is different from a phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having a same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, comprising the steps of: (a) determining said auxiliary pattern of the photomask used for pattern printing by projection optics using a mask pattern design system, said process of determining said auxiliary pattern comprising the steps of: (1) calculating, on the basis of data of at least two of the main patterns formed in said photomask and parameters representing an optical condition of said projection optics, a light intensity distribution of a projected image of said main pattern obtained by said projection optics, (2) determining an area where a light intensity is more than a specified value, excluding an area corresponding to said main pattern, on the basis of said light intensity distribution of the projected image and said main patterns, and (3) determining one or a plurality of auxiliary patterns on an area of said photomask corresponding to said area where the light intensity is more than said specified value when said area is determined, and (b) forming said main pattern and said determined auxiliary patterns on said photomask; and (c) projecting and exposing a pattern by projection optics using said photomask formed with said main pattern and said determined auxiliary patterns.

Claim 36

Independent Claim 263 words

A method of forming a pattern of a photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, comprising the steps of: (a) determining said auxiliary pattern of the photomask used for pattern printing by projection optics using a mask pattern design system, said process of determining said auxiliary pattern comprising the steps of: (1) moving, on the basis of data of at least two of the main pattern forming said photomask, an contour line of each of said main patterns outwardly by a specified distance L, thereby determining the enlarged contour line of each of said main patterns, (2) detecting a position where said enlarged contour lines are close to each other at a specified distance M or less, and (3) determining one or a plurality of auxiliary patterns of a specified shape on said position where said enlarged contour lines are close to each other when said position is determined; and (b) forming said main pattern and said determined auxiliary pattern on said photomask; and (c) projecting and exposing a pattern by projection optics using said photomask formed with said main pattern and said determined auxiliary patterns.

Claim 37

Independent Claim 263 words

A method of forming a pattern of a photomask comprising a semitransparent area and a transparent area for at least exposure light, in which the phase angle of a light beam passing through said semitransparent area is different from the phase angle of a light beam passing through said transparent area substantially by 180°, wherein a transparent auxiliary pattern having the same phase angle of a light beam passing therethrough as that of a light beam passing through said transparent area is disposed around a main pattern formed of said transparent area, comprising the steps of: (a) determining said auxiliary pattern of the photomask used for pattern printing by projection optics using a mask pattern design system, said process of determining said auxiliary pattern comprising the steps of: (1) moving, on the basis of data of at least two of the main pattern forming said photomask, an contour line of each of said main patterns outwardly by a specified distance L, thereby determining the enlarged contour line of each of said main patterns, (2) detecting a position where said enlarged contour lines are close to each other at a specified distance M or less, and (3) determining one or a plurality of auxiliary patterns of a specified shape on said position where said enlarged contour lines are close to each other when said position is determined; and (b) forming said main pattern and said determined auxiliary pattern on said photomask; and (c) projecting and exposing a pattern by projection optics using said photomask formed with said main pattern and said determined auxiliary patterns.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2000-12-22	2001-06-23	2001-12-23	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2004-12-22	2005-06-23	2005-12-23	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2008-12-22	2009-06-23	2009-12-23	$7700.00	Window Closed / Lapsed

Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system

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