Process for brush cleaning

Claim 3

The process as described in claim 1 wherein said pH level is raised to approximately 10.

Claim 4

The process as described in claim 1 wherein said basic solution is placed onto said brush during a water rinse.

Claim 5

The process as described in claim 1 wherein said basic solution comprises an ammonium hydroxide solution.

Claim 6

The process as described in claim 4 wherein said ammonium hydroxide solution has a concentration in the range of approximately 0.5-2.0%.

Claim 7

A process for brush cleaning comprising: determining a reference number of wafers, wherein said reference number of wafers is the number of wafers to be cleaned in a wafer scrubber before cleaning said brush; setting a treatment time for a brush cleaning cycle; loading said wafer scrubber with wafers; counting a number of wafers being cleaned by said wafer scrubber, wherein a counter is used to count said number of wafers being cleaned by said wafer scrubber; interrupting said wafer scrubber after said number of wafers being cleaned by said wafer scrubber is equal to said reference number of wafers; starting said brush cleaning cycle, wherein a basic solution is applied to said brush to raise the pH level of said brush during said brush cleaning cycle; resetting said counter; stopping said brush cleaning cycle; and reloading said wafer scrubber with wafers.

Claim 8

A process for brush cleaning comprising: determining a reference number of wafers, wherein said reference number of wafers is the number of wafers to be cleaned in a wafer scrubber before cleaning said brush; setting a treatment time for a brush cleaning cycle; loading said wafer scrubber with wafers; counting a number of wafers being cleaned by said wafer scrubber, wherein a counter is used to count said number of wafers being cleaned by said wafer scrubber; interrupting said wafer scrubber after said number of wafers being cleaned by said wafer scrubber is equal to said reference number of wafers; starting said brush cleaning cycle, wherein a basic solution is applied to said brush to raise the pH level of said brush during said brush cleaning cycle; resetting said counter; stopping said brush cleaning cycle; and reloading said wafer scrubber with wafers.

Claim 9

The process as described in claim 6 wherein said reference number of wafers is the number of wafers that can be held in a wafer cassette.

Claim 10

The process as described in claim 6 where in said wafers are loaded into said wafer scrubber one at a time.

Claim 11

The process as described in claim 6 wherein said step of interrupting said wafer scrubber comprises: stopping the loading of any more wafers into said wafer scrubber until said brush cleaning cycle has been completed.

Claim 12

The process as described in claim 6 wherein said pH level is raised to approximately 10.

Claim 13

The process as described in claim 6 wherein said basic solution comprises an ammonium hydroxide solution.

Claim 14

The process as described in claim 11 wherein the concentration of said ammonium hydroxide solution is in the range of approximately 0.5-2.0%.

Claim 15

The process as described in claim 6 wherein said basic solution is placed onto said brush during a water rinse.

Claim 16

The process as described in claim 6 wherein said treatment time is the amount of time that said brush cleaning cycle will last.

Claim 17

A process for cleaning the brushes in a wafer scrubber comprising: programming a first brush station with a first treatment time and a first reference wafer count; programming a second brush station with a second treatment time and a second reference wafer count; placing a wafer cassette in line with said wafer scrubber; loading wafers from said wafer cassette into said wafer scrubber; counting a first counted number of wafers being cleaned in said first brush station using a first counter; counting a second counted number of wafers being cleaned in said second brush station using a second counter; determining if said first counted number of wafers is equal to said first wafer count, wherein if said first counted number of wafers is equal to said first wafer count then said first brush station is interrupted and a first brush cleaning cycle is performed by applying a basic solution to a brush in said first brush station in order to raise the pH level of said brush, wherein said first brush cleaning cycle takes place for a period equal to said first treatment time; determining if said second counted number of wafers is equal to said second wafer count, wherein if said second counted number of wafers is equal to said second wafer count then said second brush station is interrupted and a second brush cleaning cycle is performed by applying a basic solution to a brush in said second brush station in order to raise the pH level of said brush, wherein said second brush cleaning Cycle takes place for a period equal to said second treatment time.

Claim 18

A process for cleaning the brushes in a wafer scrubber comprising: programming a first brush station with a first treatment time and a first reference wafer count; programming a second brush station with a second treatment time and a second reference wafer count; placing a wafer cassette in line with said wafer scrubber; loading wafers from said wafer cassette into said wafer scrubber; counting a first counted number of wafers being cleaned in said first brush station using a first counter; counting a second counted number of wafers being cleaned in said second brush station using a second counter; determining if said first counted number of wafers is equal to said first wafer count, wherein if said first counted number of wafers is equal to said first wafer count then said first brush station is interrupted and a first brush cleaning cycle is performed by applying a basic solution to a brush in said first brush station in order to raise the pH level of said brush, wherein said first brush cleaning cycle takes place for a period equal to said first treatment time; determining if said second counted number of wafers is equal to said second wafer count, wherein if said second counted number of wafers is equal to said second wafer count then said second brush station is interrupted and a second brush cleaning cycle is performed by applying a basic solution to a brush in said second brush station in order to raise the pH level of said brush, wherein said second brush cleaning Cycle takes place for a period equal to said second treatment time.

Claim 19

The process as described in claim 15 wherein said first reference wafer count is the number of wafers that are held in said wafer cassette.

Claim 20

The process as described in claim 15 wherein said second reference wafer count is the number of wafers are that held in said wafer cassette.

Claim 21

The process as described in claim 15 where in said wafers are loaded into said wafer scrubber one at a time.

Claim 22

The process as described in claim 15 wherein said first brush cleaning cycle comprises: interrupting said first brush station; applying a basic solution to said brush in said first brush station to raise the pH level of said brush; resetting said first counter; restarting said first brush station.

Claim 23

The process as described in claim 19 wherein said pH level is raised to approximately 10.

Claim 24

The process as described in claim 19 wherein said basic solution comprises an ammonium hydroxide solution.

Claim 25

The process as described in claim 21 wherein the concentration of said ammonium hydroxide solution is in the range of approximately 0.5-2.0%.

Claim 26

The process as described in claim 19 wherein said basic solution is placed onto said brush during a water rinse.

Claim 27

The process as described in claim 15 wherein said second brush cleaning cycle comprises: interrupting said second brush station; applying a basic solution to said brush in said second brush station to raise the pH level of said brush; resetting said second counter; restarting said second brush station.

Claim 28

The process as described in claim 24 wherein said pH level is raised to approximately 10.

Claim 29

The process as described in claim 24 wherein said basic solution comprises an ammonium hydroxide solution.

Claim 30

The process as described in claim 26 wherein the concentration of said ammonium hydroxide solution is in the range of approximately 0.5-2.0%.

Claim 31

The process as described in claim 24 wherein said basic solution is placed onto said brush during a water rinse.

Claim 32

A process for cleaning the brushes in a wafer scrubber comprising: programming said wafer scrubber with an idle time and a treatment time; determining if said scrubber has remained idle for said idle time, wherein if said wafer scrubber sits idle for said idle time a brush cleaning cycle is performed by applying a basic solution to a brush in said wafer scrubber in order to raise the pH level of said brush, wherein said brush cleaning cycle takes place for a period equal to said treatment time.

Claim 33

A process for cleaning the brushes in a wafer scrubber comprising: programming said wafer scrubber with an idle time and a treatment time; determining if said scrubber has remained idle for said idle time, wherein if said wafer scrubber sits idle for said idle time a brush cleaning cycle is performed by applying a basic solution to a brush in said wafer scrubber in order to raise the pH level of said brush, wherein said brush cleaning cycle takes place for a period equal to said treatment time.

Claim 34

The process as described in claim 29 wherein said pH level is raised to approximately 10.

Claim 35

The process as described in claim 29 wherein said basic solution comprises an ammonium hydroxide solution.

Claim 36

The process as described in claim 31 wherein the concentration of said ammonium hydroxide solution is in the range of approximately 0.5-2.0%.

Claim 37

The process as described in claim 29 wherein said basic solution is placed onto said brush during a water rinse.

Claim 38

The process as described in claim 29 wherein said treatment time is the amount of time that said brush cleaning cycle will last.

Claim 39

The process as described in claim 29 further comprising the steps of: programming said wafer scrubber with a repeat time; determining if said scrubber remains in idle after a period equal to said repeat time has passed since said brush cleaning cycle was last performed, wherein said brush cleaning cycle is repeated each time said scrubber continues to remain idle for a period equal to said repeat time.

Claim 40

The process for cleaning the brushes in a wafer scrubber comprising: programming a first brush station with a first treatment time and a first reference wafer count; programming a second brush station with a second treatment time and a second reference wafer count; programming said scrubber with an idle time, a third treatment time, and a repeat time; placing a wafer cassette in line with said wafer scrubber; loading wafers from said wafer cassette into said wafer scrubber; counting a first counted number of wafers being cleaned in said first brush station using a first counter; counting a second counted number of wafers being cleaned in said second brush station using a second counter; determining if said first counted number of wafers is equal to said first wafer count, wherein if said first counted number of wafers is equal to said first wafer count then said first brush station is interrupted and a first brush cleaning cycle is performed by applying a basic solution to a brush in said first brush station in order to raise the pH level of said brush, wherein said first brush cleaning cycle takes place for a period equal to said first treatment time; determining if said second counted number of wafers is equal to said second wafer count, wherein if said second counted number of wafers is equal to said second wafer count then said second brush station is interrupted and a second brush cleaning cycle is performed by applying a basic solution to a brush in said second brush station in order to raise the pH level of said brush, wherein said second brush cleaning cycle takes place for a period equal to said second treatment time; and determining if said scrubber has remained idle for said idle time, wherein if said wafer scrubber sits idle for said idle time a third brush cleaning cycle is performed by applying a basic solution to a brush in said scrubber in order to raise the pH level of said brush, wherein said third brush cleaning cycle takes place for a period equal to said third treatment time and wherein if said wafer scrubber remains in idle after a period equal to said repeat time has passed since said third brush cleaning cycle was last performed, wherein said third brush cleaning cycle is repeated each time said scrubber continues to remain idle for a period equal to said repeat time.

Claim 41

The process for cleaning the brushes in a wafer scrubber comprising: programming a first brush station with a first treatment time and a first reference wafer count; programming a second brush station with a second treatment time and a second reference wafer count; programming said scrubber with an idle time, a third treatment time, and a repeat time; placing a wafer cassette in line with said wafer scrubber; loading wafers from said wafer cassette into said wafer scrubber; counting a first counted number of wafers being cleaned in said first brush station using a first counter; counting a second counted number of wafers being cleaned in said second brush station using a second counter; determining if said first counted number of wafers is equal to said first wafer count, wherein if said first counted number of wafers is equal to said first wafer count then said first brush station is interrupted and a first brush cleaning cycle is performed by applying a basic solution to a brush in said first brush station in order to raise the pH level of said brush, wherein said first brush cleaning cycle takes place for a period equal to said first treatment time; determining if said second counted number of wafers is equal to said second wafer count, wherein if said second counted number of wafers is equal to said second wafer count then said second brush station is interrupted and a second brush cleaning cycle is performed by applying a basic solution to a brush in said second brush station in order to raise the pH level of said brush, wherein said second brush cleaning cycle takes place for a period equal to said second treatment time; and determining if said scrubber has remained idle for said idle time, wherein if said wafer scrubber sits idle for said idle time a third brush cleaning cycle is performed by applying a basic solution to a brush in said scrubber in order to raise the pH level of said brush, wherein said third brush cleaning cycle takes place for a period equal to said third treatment time and wherein if said wafer scrubber remains in idle after a period equal to said repeat time has passed since said third brush cleaning cycle was last performed, wherein said third brush cleaning cycle is repeated each time said scrubber continues to remain idle for a period equal to said repeat time.

Claim 42

The process as described in claim 36 wherein said wafers are loaded into said wafer scrubber one at a time.

Claim 43

The process as described in claim 36 wherein said first brush cleaning cycle comprises: interrupting said first brush station; applying a basic solution to said brush first brush station to raise the pH level of said brush; resetting said first counter; restarting said first brush station.

Claim 44

The process as described in claim 38 wherein said pH level is raised to approximately 10.

Claim 45

The process as described in claim 38 wherein said basic solution comprises an ammonium hydroxide solution.

Claim 46

The process as described in claim 40 wherein the concentration of said ammonium hydroxide solution is in the range of approximately 0.5-2.0%.

Claim 47

The process as described in claim 38 wherein said basic solution is placed onto said brush during a water rinse.

Claim 48

The process as described in claim 36 wherein said second brush cleaning cycle comprises: interrupting said second brush station; applying a basic solution to said brush in said second brush station to raise the pH level of said brush; resetting said second counter; restarting said second brush station.

Claim 49

The process as described in claim 43 wherein said pH level is raised to approximately 10.

Claim 50

The process as described in claim 43 wherein said basic solution comprises an ammonium hydroxide solution.

Claim 51

The process as described in claim 45 wherein the concentration of said ammonium hydroxide solution is in the range of approximately 0.5-2.0%.

Claim 52

The process as described in claim 43 wherein said basic solution is placed onto said brush during a water rinse.

Claim 53

The process as described in claim 36 wherein said third brush cleaning cycle comprises: interrupting said first and second brush stations; applying a basic solution to said brushes of said first and second brush stations to raise the pH level of said brushes; and restarting said first and second brush stations.

Claim 54

The process as described in claim 48 wherein said pH level is raised to approximately 10.

Claim 55

The process as described in claim 48 wherein said basic solution comprises an ammonium hydroxide solution.

Claim 56

The process as described in claim 50 wherein the concentration of said ammonium hydroxide solution is in the range of approximately 0.5-2.0%.

Claim 57

The process as described in claim 50 wherein said basic solution is placed onto said brush during a water rinse.