← Back to Patent Explorer
US5691548A Expired / Lapsed US ⏱️ 0.0 years remaining

Solid state imaging device having high sensitivity and exhibiting high degree of light utilization and method of manufacturing the same

Assignee: Sharp Corp
•
Filing: 1996-04-30
•
Granted: 1997-11-25
•
Expires: 2016-04-30
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract There are provided a solid state imaging device having high sensitivity and exhibiting high degree of light utilization and a method of manufacturing the same. An insulating film 42, a transfer electrode 43, a light shielding film 44, a protective film 45, and a flat layer 51 are formed above a layer having a photoelectric conversion portion, and a concave lens layer 52 is formed on the flat layer 51 to a lattice pattern. The concave lens layer 52 of the lattice pattern is hot melted for conversion into a concave type micro-lens 52. A resin layer 53 having a refractive index smaller than that of the concave lens 52, a buffer layer 54, and a convex type micro-lens 57 are sequentially formed above the concave type micro-lens 52. The concave type micro-lens 52 functions to bring light rays focused by the convex type micro-lens 57 to a position close to light incident vertically upon the photoelectric conversion portion 41.

Inventors

  • 👤 Tetsuro Akio

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 09:17
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/80; H10F39/805; G; G02; G02B; G02B3/00; G02B3/0006; G02B3/0012; G02B3/0018; H10F39/011; H10F39/024; H10F39/10; H10F39/12; H10F39/15; H10F39/806; H10F39/8063; H10F77/00; H10F77/40; H10F77/413; H10F39/18

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 152 words
A solid state imaging device having a plurality of pixels including a photoelectric conversion portion and a convex type micro-lens disposed above the photoelectric conversion portion, the device comprising: a support layer formed between the photoelectric conversion portion and the convex type micro-lens for supporting the convex type micro-lens; and a concave type micro-lens layer disposed between the support layer and the photoelectric conversion portion, said concave type micro-lens layer being formed of a material having a refractive index higher than that of the support layer and further comprising a concave type lens seating layer disposed between the concave type micro-lens layer and the support layer for supporting the support layer; and wherein material of the convex type micro-lens, that of the support layer, and that of the concave type micro-lens layer being all designed to have a refractive index higher than that of material of the concave type lens seating layer.
Claim 2
Dependent Claim 152 words
A solid state imaging device having a plurality of pixels including a photoelectric conversion portion and a convex type micro-lens disposed above the photoelectric conversion portion, the device comprising: a support layer formed between the photoelectric conversion portion and the convex type micro-lens for supporting the convex type micro-lens; and a concave type micro-lens layer disposed between the support layer and the photoelectric conversion portion, said concave type micro-lens layer being formed of a material having a refractive index higher than that of the support layer and further comprising a concave type lens seating layer disposed between the concave type micro-lens layer and the support layer for supporting the support layer; and wherein material of the convex type micro-lens, that of the support layer, and that of the concave type micro-lens layer being all designed to have a refractive index higher than that of material of the concave type lens seating layer.
Claim 3
Dependent Claim 106 words
A solid state imaging device having a plurality of pixels including a photoelectric conversion portion and a convex type micro-lens disposed above the photoelectric conversion portion, the device comprising: a support layer formed between the photoelectric conversion portion and the convex type micro-lens for supporting the convex type micro-lens, said support layer being formed of a material having a refractive index lower than that of the convex type micro-lens; and a concave type micro-lens layer disposed between the support layer and the photoelectric conversion portion, said concave type micro-lens layer being formed of a material having a refractive index higher than that of the support layer.
Claim 4
Dependent Claim 106 words
A solid state imaging device having a plurality of pixels including a photoelectric conversion portion and a convex type micro-lens disposed above the photoelectric conversion portion, the device comprising: a support layer formed between the photoelectric conversion portion and the convex type micro-lens for supporting the convex type micro-lens, said support layer being formed of a material having a refractive index lower than that of the convex type micro-lens; and a concave type micro-lens layer disposed between the support layer and the photoelectric conversion portion, said concave type micro-lens layer being formed of a material having a refractive index higher than that of the support layer.
Claim 5
Dependent Claim 29 words
A solid state imaging device as shown in claim 2, wherein the material of the concave type micro-lens layer has a higher refractive index than the convex type micro-lens.

References Cited (Backward Citations)

JPH02103962A Cited
JPH02280376A Cited
JPH04199874A Cited
JPH04278582A Cited
US5371397A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-11-24 2001-05-26 2001-11-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-11-24 2005-05-26 2005-11-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-11-24 2009-05-26 2009-11-25 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag