US5691222A
Expired / Lapsed
US
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Method of manufacturing semiconductor integrated circuit device having a capacitor electrode
Assignee: NEC Electronics Corp
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Filing: 1996-11-12
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Granted: 1997-11-25
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Expires: 2016-11-12
Abstract
Abstract A method of manufacturing a semiconductor integrated circuit device which stores information by storing charges in a capacitor portion formed on a semiconductor substrate is provided. This method includes the steps of depositing a conductive film for forming a lower electrode of storage node capacitor portion on an insulating interlayer film formed with a contact hole for forming a contact that connects the capacitor portion with the substrate, depositing a cap oxide film on the conductive film and planarizing the cap oxide film, applying a resist on the planarized cap oxide film to a uniform thickness and forming a pattern mask of the storage node capacitor portion from the resist, etching the cap oxide film and the conductive film by using the pattern mask as a mask, and forming a lower electrode of the storage node capacitor portion by removing the cap oxide film.
Inventors
- 👤 Tadashi Fukase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:21
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
141 words
A method of manufacturing a semiconductor integrated circuit device which stores information by storing charges in a capacitor portion formed on a semiconductor substrate, comprising the steps of depositing a conductive film for forming a lower electrode of a storage node capacitor portion on an insulating interlayer film formed with a contact hole for forming a contact that connects said capacitor portion with said substrate, depositing a cap oxide film on said conductive film and planarizing said cap oxide film, applying a resist on said planarized cap oxide film to a uniform thickness and forming a pattern mask of said storage node capacitor portion from said resist, etching said cap oxide film and said conductive film by using said pattern mask as a mask, and forming a lower electrode of said storage node capacitor portion by removing said cap oxide film.
Claim 2
Independent Claim
141 words
A method of manufacturing a semiconductor integrated circuit device which stores information by storing charges in a capacitor portion formed on a semiconductor substrate, comprising the steps of depositing a conductive film for forming a lower electrode of a storage node capacitor portion on an insulating interlayer film formed with a contact hole for forming a contact that connects said capacitor portion with said substrate, depositing a cap oxide film on said conductive film and planarizing said cap oxide film, applying a resist on said planarized cap oxide film to a uniform thickness and forming a pattern mask of said storage node capacitor portion from said resist, etching said cap oxide film and said conductive film by using said pattern mask as a mask, and forming a lower electrode of said storage node capacitor portion by removing said cap oxide film.
Claim 3
Dependent Claim
24 words
A method according to claim 1, wherein said conductive film is a polysilicon film and said cap oxide film is a silicon oxide film.
Claim 4
Dependent Claim
59 words
A method according to claim 1, wherein at least an uppermost layer portion of said insulating interlayer film is formed of a non-doped silicon oxide film, said cap oxide film is formed of a silicon oxide film doped with boron and phosphorus, and after formation of said storage node capacitor portion, only said cap oxide film is selectively etched.
Claim 5
Dependent Claim
59 words
A method according to claim 2, wherein at least an uppermost layer portion of said insulating interlayer film is formed of a non-doped silicon oxide film, said cap oxide film is formed of a silicon oxide film doped with boron and phosphorus, and after formation of said storage node capacitor portion, only said cap oxide film is selectively etched.
Claim 6
Dependent Claim
19 words
A method according to claim 1, wherein gas-phase hydrofluoric acid is used to selectively etch said cap oxide film.
Claim 7
Dependent Claim
19 words
A method according to claim 2, wherein gas-phase hydrofluoric acid is used to selectively etch said cap oxide film.
Claim 8
Dependent Claim
19 words
A method according to claim 3, wherein gas-phase hydrofluoric acid is used to selectively etch said cap oxide film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-11-24 | 2001-05-26 | 2001-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-24 | 2005-05-26 | 2005-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-24 | 2009-05-26 | 2009-11-25 | $7700.00 | Window Closed / Lapsed |