US5689120A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MOS field effect transistor in a dynamic random access memory device and method for fabricating the same
Assignee: NEC Electronics Corp
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Filing: 1996-10-15
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Granted: 1997-11-18
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Expires: 2016-10-15
Abstract
Abstract The present invention provides a field effect transistor comprising the following elements. An insulation film is provided on a semiconductor substrate. The insulation film has an opening positioned on a predetermined region of the semiconductor substrate. A first polysilicon film is provided over the insulation film. A second polysilicon film is provided in contact with the first polysilicon film. The second polysilicon film extends on inside walls of the opening of the insulation film and over a peripheral portion of the predetermined region of the semiconductor substrate so that the first polysilicon film is connected through the second polysilicon film to the peripheral portion in the predetermined region of the semiconductor substrate. A gate insulation film is selectively provided, which extends on the predetermined region, except on the peripheral portion, of the semiconductor substrate and further extends on the second polysilicon film and a part of the first polysilicon film around the second polysilicon film. A gate electrode is provided on the gate insulation film to define a composite channel region raider the gate insulation film so that the composite channel region extends through the first and second polysilicon films under the gate insulation film as well as through the semiconductor substrate under the gate insulation film. Source and drain regions are selectively provided in the first polysilicon film except under the gate insulation film so that the source and drain regions are connected through the composite channel region.
Inventors
- 👤 Kaoru Narita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:56
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/24; H; H10; H10D; H10D86/00; H10D86/201; H10B; H10B12/00; H10B12/30; H10B12/31; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
230 words
A field effect transistor comprising: a semiconductor substrate; an insulation film provided on said semiconductor substrate, said insulation film having an opening positioned on a predetermined region of said semiconductor substrate; a first polysilicon film provided over said insulation film; a second polysilicon film provided in contact with said first polysilicon film, said second polysilicon film extending on inside walls of said opening of said insulation film and over a peripheral portion of said predetermined region of said semiconductor substrate so that said first polysilicon film is connected through said second polysilicon film to said peripheral portion in said predetermined region of said semiconductor substrate; a gate insulation film selectively provided, which extends on said predetermined region, except on said peripheral portion, of said semiconductor substrate and further extends on said second polysilicon film and a part of said first polysilicon film around said second polysilicon film; a gate electrode provided on said gate insulation film to define a composite channel region under said gate insulation film so that said composite channel region extends through said first and second polysilicon films under said gate insulation film as well as through said semiconductor substrate under said gate insulation film; and source and drain regions selectively provided in said first polysilicon film except under said .gate insulation film so that said source and drain regions are connected through said composite channel region.
Claim 2
Dependent Claim
230 words
A field effect transistor comprising: a semiconductor substrate; an insulation film provided on said semiconductor substrate, said insulation film having an opening positioned on a predetermined region of said semiconductor substrate; a first polysilicon film provided over said insulation film; a second polysilicon film provided in contact with said first polysilicon film, said second polysilicon film extending on inside walls of said opening of said insulation film and over a peripheral portion of said predetermined region of said semiconductor substrate so that said first polysilicon film is connected through said second polysilicon film to said peripheral portion in said predetermined region of said semiconductor substrate; a gate insulation film selectively provided, which extends on said predetermined region, except on said peripheral portion, of said semiconductor substrate and further extends on said second polysilicon film and a part of said first polysilicon film around said second polysilicon film; a gate electrode provided on said gate insulation film to define a composite channel region under said gate insulation film so that said composite channel region extends through said first and second polysilicon films under said gate insulation film as well as through said semiconductor substrate under said gate insulation film; and source and drain regions selectively provided in said first polysilicon film except under said .gate insulation film so that said source and drain regions are connected through said composite channel region.
Claim 3
Dependent Claim
356 words
A memory cell structure comprising: a semiconductor substrate; a field oxide film selectively formed on said semiconductor substrate to define a memory cell area of said semiconductor substrate; an insulation film provided on said memory cell area of said semiconductor substrate, said insulation film having an opening positioned on a predetermined region in said memory cell area of said semiconductor substrate; a first polysilicon film provided over said insulation film; a second polysilicon film provided in contact with said first polysilicon film, said second polysilicon film extending on inside walls of said opening of said insulation film and over a peripheral portion of said predetermined region of said semiconductor substrate so that said first polysilicon film is connected through said second polysilicon film to said peripheral portion in said predetermined region of said semiconductor substrate; a gate insulation film selectively provided, which extends on said predetermined region, except on said peripheral portion, of said semiconductor substrate and further extends on said second polysilicon film and a part of said first polysilicon film around said second polysilicon film; a gate electrode provided on said gate insulation film to define a composite channel region under said gate insulation film so that said composite channel region extends through said first and second polysilicon films under said gate insulation film as well as through said semiconductor substrate under said gate insulation film; source and drain regions selectively provided in said first polysilicon film except under said gate insulation film so that said source and drain regions are connected through said composite channel region; an inter-layer insulator provided over said field oxide film, said source and drain regions and said gate electrode, said inter-layer insulator having a contact hole positioned over said drain region; a storage electrode selectively provided, which extends over said inter-layer insulator around said contact hole and extends within said contact hole so that said storage electrode is made into contact with said drain region; a capacitive dielectric film extending over said storage electrode and on side walls of said storage electrode; and a capacitive electrode provided at least on an entire region of said capacitive dielectric film.
Claim 4
Dependent Claim
356 words
A memory cell structure comprising: a semiconductor substrate; a field oxide film selectively formed on said semiconductor substrate to define a memory cell area of said semiconductor substrate; an insulation film provided on said memory cell area of said semiconductor substrate, said insulation film having an opening positioned on a predetermined region in said memory cell area of said semiconductor substrate; a first polysilicon film provided over said insulation film; a second polysilicon film provided in contact with said first polysilicon film, said second polysilicon film extending on inside walls of said opening of said insulation film and over a peripheral portion of said predetermined region of said semiconductor substrate so that said first polysilicon film is connected through said second polysilicon film to said peripheral portion in said predetermined region of said semiconductor substrate; a gate insulation film selectively provided, which extends on said predetermined region, except on said peripheral portion, of said semiconductor substrate and further extends on said second polysilicon film and a part of said first polysilicon film around said second polysilicon film; a gate electrode provided on said gate insulation film to define a composite channel region under said gate insulation film so that said composite channel region extends through said first and second polysilicon films under said gate insulation film as well as through said semiconductor substrate under said gate insulation film; source and drain regions selectively provided in said first polysilicon film except under said gate insulation film so that said source and drain regions are connected through said composite channel region; an inter-layer insulator provided over said field oxide film, said source and drain regions and said gate electrode, said inter-layer insulator having a contact hole positioned over said drain region; a storage electrode selectively provided, which extends over said inter-layer insulator around said contact hole and extends within said contact hole so that said storage electrode is made into contact with said drain region; a capacitive dielectric film extending over said storage electrode and on side walls of said storage electrode; and a capacitive electrode provided at least on an entire region of said capacitive dielectric film.
References Cited (Backward Citations)
US5181088A
Cited
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