Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
117 words
A method of forming oxide in a substrate field region, comprising: forming an opening through an oxide barrier layer comprising a silicon nitride layer overlying a pad oxide layer, wherein the opening is used to expose an upper surface of the substrate field region; growing an oxide substantially within said opening; depositing an oxide adjacent to the entire upper surface of the grown said oxide; and directionally removing the deposited said oxide by directing etchant ions in a direction normal to said upper surface, whereby the deposited said oxide is removed except for a portion retained on a grown oxide surface which extends substantially normal to said upper surface adjacent the lateral perimeter of said grown oxide.
Claim 2
Independent Claim
117 words
A method of forming oxide in a substrate field region, comprising: forming an opening through an oxide barrier layer comprising a silicon nitride layer overlying a pad oxide layer, wherein the opening is used to expose an upper surface of the substrate field region; growing an oxide substantially within said opening; depositing an oxide adjacent to the entire upper surface of the grown said oxide; and directionally removing the deposited said oxide by directing etchant ions in a direction normal to said upper surface, whereby the deposited said oxide is removed except for a portion retained on a grown oxide surface which extends substantially normal to said upper surface adjacent the lateral perimeter of said grown oxide.
Claim 3
Dependent Claim
56 words
The method as recited in claim 1, wherein said forming step comprises: growing said layer of pad oxide across a semiconductor substrate; depositing said layer of silicon nitride across said pad oxide to a thickness more than two times the pad oxide thickness; and selectively removing said silicon-nitride and pad oxide from said substrate field region.
Claim 4
Dependent Claim
17 words
The method as recited in claim 2, wherein said pad oxide thickness is less than 400 angstroms.
Claim 5
Dependent Claim
29 words
The method as recited in claim 1, wherein said growing step comprises subjecting said substrate field region to a heat cycle while in the presence of an oxygen ambient.
Claim 6
Dependent Claim
17 words
The method as recited in claim 1, wherein said depositing step comprises a conformal CVD deposition process.
Claim 7
Dependent Claim
39 words
The method as recited in claim 5, wherein the conformal CVD deposition process involves inserting the substrate field region into a reaction chamber containing tetraethyl orthosilicate (TEOS) and increasing the temperature inside the reaction chamber to about 725° C.
Claim 8
Dependent Claim
38 words
The method as recited in claim 1, wherein said directionally removing step comprises inserting the substrate field region, upon which the grown and deposited oxide are formed, into a fluorine-containing gas and between a pair of charged electrodes.
Claim 9
Dependent Claim
32 words
The method as recited in claim 1, wherein said directionally removing step comprises inserting the substrate field region upon which the grown and deposited oxides are formed into an ion-assisted etch device.
Claim 10
Dependent Claim
19 words
The method as recited in claim 1, further comprising removing said oxide barrier layer prior to said depositing step.
Claim 11
Dependent Claim
40 words
The method as recited in claim 1, further comprising removing the oxide barrier layer to expose an upper surface of one or more substrate device active areas after said oxide is grown and before said deposited oxide is directionally removed.
Claim 12
Dependent Claim
41 words
The method as recited in claim 10, further comprising growing a sacrificial oxide layer upon and within the exposed upper surface of the substrate device active areas after said oxide barrier layer is removed and before said oxide is directionally removed.
Claim 13
Dependent Claim
26 words
The method as recited in claim 11, further comprising removing the sacrificial oxide layer during the time in which said deposited said oxide is directionally removed.