Method of designing mask pattern or direct depicting pattern on a wafer for forming a semiconductor integrated circuit and design rule confirmation method

Claim 1

A method for designing mask patterns or direct depicting patterns using computer aided design for forming a semiconductor integrated circuit including a plurality of laminated semiconductor layers, the method comprising: inputting n design rules, where n is an integer larger than two, for performing a design rule check of n mask patterns, n mask layers, or n direct depicting patterns in the corresponding n semiconductor layers, for forming n semiconductor layers; editing the input design rules into a matrix notation; designing mask patterns or direct depicting patterns for the n respective mask layers or the n respective semiconductor layers; displaying the designed mask patterns or direct depicting patterns on a CRT display; performing a design rule check (DRC) of the mask patterns or direct depicting patterns using the design rules edited into the matrix notation; modifying checked mask patterns or direct depicting patterns to satisfy the design rules edited into the matrix notation; and outputting the design rules edited into the matrix notation and the modified mask patterns or direct depicting patterns wherein the process of editing the design rules into the matrix notation comprises: displaying, on a CRT display, the layer number of the n mask layers or semiconductor layers on first and second axes of Cartesian coordinates as i and j, respectively, where i and j are respectively integers more than zero and less than n+1; and while displaying on the Cartesian coordinates, in each cell corresponding to coordinates (i, j) represented by the layer numbers i and j, for each cell where i=j, displaying the minimum width and the minimum interval, representing the design rules of the mask patterns or direct depicting patterns in the single layer, for each cell where i>j, displaying the minimum bracing or the minimum interval, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; for each cell where i<j, displaying the minimum interval or the minimum bracing, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; and simultaneously displaying supplementary conditions of the respective design rules on the respective cells on the Cartesian coordinates.

Claim 2

A method for designing mask patterns or direct depicting patterns using computer aided design for forming a semiconductor integrated circuit including a plurality of laminated semiconductor layers, the method comprising: inputting n design rules, where n is an integer larger than two, for performing a design rule check of n mask patterns, n mask layers, or n direct depicting patterns in the corresponding n semiconductor layers, for forming n semiconductor layers; editing the input design rules into a matrix notation; designing mask patterns or direct depicting patterns for the n respective mask layers or the n respective semiconductor layers; displaying the designed mask patterns or direct depicting patterns on a CRT display; performing a design rule check (DRC) of the mask patterns or direct depicting patterns using the design rules edited into the matrix notation; modifying checked mask patterns or direct depicting patterns to satisfy the design rules edited into the matrix notation; and outputting the design rules edited into the matrix notation and the modified mask patterns or direct depicting patterns wherein the process of editing the design rules into the matrix notation comprises: displaying, on a CRT display, the layer number of the n mask layers or semiconductor layers on first and second axes of Cartesian coordinates as i and j, respectively, where i and j are respectively integers more than zero and less than n+1; and while displaying on the Cartesian coordinates, in each cell corresponding to coordinates (i, j) represented by the layer numbers i and j, for each cell where i=j, displaying the minimum width and the minimum interval, representing the design rules of the mask patterns or direct depicting patterns in the single layer, for each cell where i>j, displaying the minimum bracing or the minimum interval, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; for each cell where i<j, displaying the minimum interval or the minimum bracing, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; and simultaneously displaying supplementary conditions of the respective design rules on the respective cells on the Cartesian coordinates.

Claim 8

A method for designing mask patterns or direct depicting patterns using computer aided design for forming a semiconductor integrated circuit including a plurality of laminated semiconductor layers, the method comprising: inputting n design rules, where n is an integer larger than two, for preforming a design rule check of n mask patterns, n mask layers, or n direct depicting patterns in the corresponding n semiconductor layers, for forming n semiconductor layers; editing the input design rules into a matrix notation; automatically designing mask patterns or direct depicting patterns for the n respective mask layers or the n respective semiconductor layers; displaying the automatically designed mask patterns or the direct depicting patterns on a CRT display; and outputting the design rules edited into the matrix notation and the automatically designed mask patterns or direct depicting patterns wherein the process of editing the design rules into the matrix notation comprises: displaying, on a CRT display, the layer number of the n mask layers or semiconductor layers on first and second axes of Cartesian coordinates as i and j, respectively, where i and j are respectively integers more than zero and less than n+1; and while displaying on the Cartesian coordinates, in each cell corresponding to coordinates (i, j) represented by the layer numbers i and j, for each cell where i=j, displaying the minimum width and the minimum interval, representing the design rules of the mask patterns or direct depicting patterns in the single layer, for each cell where i>j, displaying the minimum bracing or the minimum interval, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; for each cell where i<j, displaying the minimum interval or the minimum bracing, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; and simultaneously displaying supplementary conditions of the respective design rules on the respective cells on the Cartesian coordinates.

Claim 9

A method for designing mask patterns or direct depicting patterns using computer aided design for forming a semiconductor integrated circuit including a plurality of laminated semiconductor layers, the method comprising: inputting n design rules, where n is an integer larger than two, for preforming a design rule check of n mask patterns, n mask layers, or n direct depicting patterns in the corresponding n semiconductor layers, for forming n semiconductor layers; editing the input design rules into a matrix notation; automatically designing mask patterns or direct depicting patterns for the n respective mask layers or the n respective semiconductor layers; displaying the automatically designed mask patterns or the direct depicting patterns on a CRT display; and outputting the design rules edited into the matrix notation and the automatically designed mask patterns or direct depicting patterns wherein the process of editing the design rules into the matrix notation comprises: displaying, on a CRT display, the layer number of the n mask layers or semiconductor layers on first and second axes of Cartesian coordinates as i and j, respectively, where i and j are respectively integers more than zero and less than n+1; and while displaying on the Cartesian coordinates, in each cell corresponding to coordinates (i, j) represented by the layer numbers i and j, for each cell where i=j, displaying the minimum width and the minimum interval, representing the design rules of the mask patterns or direct depicting patterns in the single layer, for each cell where i>j, displaying the minimum bracing or the minimum interval, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; for each cell where i<j, displaying the minimum interval or the minimum bracing, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; and simultaneously displaying supplementary conditions of the respective design rules on the respective cells on the Cartesian coordinates.

Claim 15

A method for confirming design rules used for performing a design rule check on one selected among n mask patterns, n mask layers, or n direct depicting patterns, where n is an integer larger than one, onto wafers, for forming a semiconductor integrated circuit including a plurality of laminated semiconductor layers, the method comprising: extracting, from existing mask patterns or direct depicting patterns, the minimum width and minimum interval of the mask patterns or direct depicting patterns in the single layer, and the minimum width and minimum interval of the mask patterns or direct depicting patterns between different layers, as design rules; and editing the extracted design rules into matrix notation wherein the process of editing the design rules into the matrix notation comprises: displaying, on a CRT display, the layer number of the n mask layers or semiconductor layers on first and second axes of Cartesian coordinates as i and j, respectively, where i and j are respectively integers more than zero and less than n+1; and while displaying on each Cartesian coordinates, in the cell corresponding to coordinates (i, j) represented by the layer numbers i and j, for each cell where i=j, displaying the minimum width and the minimum interval, representing the design rules of the mask patterns or direct depicting patterns in the single layer, for each cell where i>j, displaying the minimum bracing or the minimum interval, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; for each cell where i<j, displaying the minimum interval or the minimum bracing, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; and simultaneously displaying supplementary conditions of the respective design rules on the respective cells on the Cartesian coordinates.

Claim 16

A method for confirming design rules used for performing a design rule check on one selected among n mask patterns, n mask layers, or n direct depicting patterns, where n is an integer larger than one, onto wafers, for forming a semiconductor integrated circuit including a plurality of laminated semiconductor layers, the method comprising: extracting, from existing mask patterns or direct depicting patterns, the minimum width and minimum interval of the mask patterns or direct depicting patterns in the single layer, and the minimum width and minimum interval of the mask patterns or direct depicting patterns between different layers, as design rules; and editing the extracted design rules into matrix notation wherein the process of editing the design rules into the matrix notation comprises: displaying, on a CRT display, the layer number of the n mask layers or semiconductor layers on first and second axes of Cartesian coordinates as i and j, respectively, where i and j are respectively integers more than zero and less than n+1; and while displaying on each Cartesian coordinates, in the cell corresponding to coordinates (i, j) represented by the layer numbers i and j, for each cell where i=j, displaying the minimum width and the minimum interval, representing the design rules of the mask patterns or direct depicting patterns in the single layer, for each cell where i>j, displaying the minimum bracing or the minimum interval, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; for each cell where i<j, displaying the minimum interval or the minimum bracing, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; and simultaneously displaying supplementary conditions of the respective design rules on the respective cells on the Cartesian coordinates.

Claim 18

A method for confirming design rules used for performing a design rule check on one selected among n mask patterns, n mask layers, or n direct depicting patterns, when n is an integer larger than one, onto wafers, for forming a semiconductor integrated circuit including a plurality of laminated semiconductor layers, the method comprising: inputting the minimum width and minimum interval of the mask patterns or direct depicting patterns in the single layer, and the minimum width and minimum interval of the mask patterns or direct depicting patterns between different layers, as existing design rules in symbol sequences; editing the input design rules into matrix notation; changing the design rules using the matrix notation; editing again the design rules edited into the matrix notation into symbol sequences, the process of editing into the matrix notation comprising: displaying, on a CRT display, the layer number of the n mask layers or semiconductor layers on first and second axes of Cartesian coordinates as i and j, respectively, where i and j are respectively integers more than zero and less than n+1; and while displaying on the Cartesian coordinates, in each cell corresponding to coordinates (i, j) represented by the layer numbers i and j, for each cell where i=j, displaying the minimum width and the minimum interval, representing the design rules of the mask patterns or direct depicting patterns in the single layer, for each cell where i>j, displaying the minimum bracing or the minimum interval, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; for each cell where i<j, displaying the minimum interval or the minimum bracing, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; and simultaneously displaying supplementary conditions of the respective design rules on the respective cells on the Cartesian coordinates.

Claim 19

A method for confirming design rules used for performing a design rule check on one selected among n mask patterns, n mask layers, or n direct depicting patterns, when n is an integer larger than one, onto wafers, for forming a semiconductor integrated circuit including a plurality of laminated semiconductor layers, the method comprising: inputting the minimum width and minimum interval of the mask patterns or direct depicting patterns in the single layer, and the minimum width and minimum interval of the mask patterns or direct depicting patterns between different layers, as existing design rules in symbol sequences; editing the input design rules into matrix notation; changing the design rules using the matrix notation; editing again the design rules edited into the matrix notation into symbol sequences, the process of editing into the matrix notation comprising: displaying, on a CRT display, the layer number of the n mask layers or semiconductor layers on first and second axes of Cartesian coordinates as i and j, respectively, where i and j are respectively integers more than zero and less than n+1; and while displaying on the Cartesian coordinates, in each cell corresponding to coordinates (i, j) represented by the layer numbers i and j, for each cell where i=j, displaying the minimum width and the minimum interval, representing the design rules of the mask patterns or direct depicting patterns in the single layer, for each cell where i>j, displaying the minimum bracing or the minimum interval, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; for each cell where i<j, displaying the minimum interval or the minimum bracing, representing the design rules of the mask patterns or direct depicting patterns between the i and j layers; and simultaneously displaying supplementary conditions of the respective design rules on the respective cells on the Cartesian coordinates.