Device simulator and mesh generating method thereof

Claim 3

The device simulator according to claim 1, wherein said boundary protection layer generating means generates a boundary protection layer including traingular meshes each having a mesh branch parallel to said node boundary.

Claim 4

The device simulator according to claim 1, further comprising checking means for checking whether a boundary protection layer with respect to a generated triangular mesh is destroyed or not, wherein when said checking means detects a destroyed part of a boundary protection layer, said boundary protection layer generating means modifies the destroyed part and re-generates a boundary protection layer.

Claim 5

The mesh generating method comprising the steps of: generating a boundary protection layer in a node based model, said boundary protection layer comprising a layer of nodes having a mesh connection without parasitic resistance in the vicinity of a node boundary representing an interface between different components of a semiconductor device whose electrical characteristics are to be simulated by using a computer; allocating mesh points apart from said boundary protection layer by a predetermined reference distance; and generating triangular meshes by connecting said mesh points.

Claim 6

The mesh generating method comprising the steps of: generating a boundary protection layer in a node based model, said boundary protection layer comprising a layer of nodes having a mesh connection without parasitic resistance in the vicinity of a node boundary representing an interface between different components of a semiconductor device whose electrical characteristics are to be simulated by using a computer; allocating mesh points apart from said boundary protection layer by a predetermined reference distance; and generating triangular meshes by connecting said mesh points.

Claim 7

The mesh generating method according to claim 4, wherein said step of generating a boundary protection layer comprises the steps of: generating mesh points on a boundary line segment; generating a predetermined number of mesh points, at predetermined intervals, from said mesh points generated on the boundary line segment other than those at vertexes of angles in a direction vertical to the boundary line segment; generating a predetermined number of mesh points, at predetermined intervals, from said mesh point located at a vertex of an angle whose internal angle is less than 180°, among those generated on the boundary line segment, in a direction of a bisector of the angle; generating, at predetermined intervals, a predetermined number of mesh points form said mesh point located at a vertex of an angle whose internal angle is more than 180°, among those generated on the boundary line segment, in directions vertical to two boundary line segments forming the angle and a direction bisecting the angle between the two line segments by a predetermined angle; and generating an orthogonal mesh by connecting the mesh points generated in each step by mesh branches including line segments vertical and parallel to said boundary line segment.

Claim 8

The mesh generating method according to claim 4, further comprising the steps of: checking whether a boundary protection layer with respect to a generated triangular mesh is destroyed or not; and when a destroyed part is detected in said boundary protection layer in said step of checking whether said boundary protection layer is destroyed, modifying the destroyed part and re-generating a boundary protection layer.

Claim 13

A mesh generating method comprising the steps of: generating a triangular mesh representing a semiconductor device whose electric characteristics are to be simulated by using a computer; and modifying a position of a mesh point of said triangular mesh according to a rate of a local impurity concentration change in said semiconductor device, wherein said step of modifying the position of a mesh point shifts a mesh point to a position to satisfy static equilibrium conditions where each mesh branch of said triangular mesh represents a spring with a spring coefficient set according to said rate of a local impurity concentration change in said semiconductor device.

Claim 14

A mesh generating method comprising the steps of: generating a triangular mesh representing a semiconductor device whose electric characteristics are to be simulated by using a computer; and modifying a position of a mesh point of said triangular mesh according to a rate of a local impurity concentration change in said semiconductor device, wherein said step of modifying the position of a mesh point shifts a mesh point to a position to satisfy static equilibrium conditions where each mesh branch of said triangular mesh represents a spring with a spring coefficient set according to said rate of a local impurity concentration change in said semiconductor device.