One time programmable read only memory programmed by destruction of insulating layer

Claim 1

A semiconductor storage device comprising: a volatile memory block and a nonvolatile memory block; said volatile memory block comprising: a bit line for column selection; a word line for row selection; a plurality of first memory cells arranged in the form of matrix, for storing volatile information; and a first read/write control means for control read/write operation to said first memory cells; said nonvolatile memory block comprising: a high potential line to be used for writing of nonvolatile information; a bit line to be used commonly to said volatile memory block; a plurality of second memory cells arranged in the form of matrix, for storing said nonvolatile information; a nonvolatile storage cell plate line; and a second read/write control means for controlling read/write operation to said second memory cells; each of said second memory cells comprising: a nonvolatile storage capacitor; a nonvolatile storage cell selecting transistor located between said bit line to be used commonly to said volatile memory block and one electrode of said nonvolatile storage capacitor; a switching means connected between the other electrode of said nonvolatile storage capacitor and said high potential line to be used for writing of nonvolatile information, and adapted to selectively switch on in writing into redundant storage cells; and a nonvolatile storage cell plate line.