US5670218A
Expired / Lapsed
US
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Method for forming ferroelectric thin film and apparatus therefor
Assignee: SK Hynix Inc
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Filing: 1996-10-03
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Granted: 1997-09-23
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Expires: 2016-10-03
Abstract
Abstract A ferroelectric thin film superior in coatability, fineness of structure and uniformity of composition, is obtained by a method comprised of inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power in order for them to participate in a deposition reaction; setting an optimal process condition in which the ions dissociated from the reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures; supplying the reactant materials through conduits, a manifold and a shower head to a reactor without deterioration, the manifold collecting the reactant materials, the shower head serving to spray the mixed reactant materials; and depositing a ferroelectric thin film in the reactor while purging residual gas from the conduits.
Inventors
- 👤 Yong Ku Baek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:43
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C23C16/4401; C23C16/4405; C23C16/4408; C23C16/45512; C23C16/45561; C23C16/45572; C23C16/45587; C23C16/45591; C23C16/50; C23C16/505; C23C16/509; C23C16/5096
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
111 words
A method for forming a ferroelectric thin film on a wafer, comprising the steps of: inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power; setting an optimal process condition in which the ions dissociated from said reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures; supplying said reactant materials through conduits, a manifold and a shower head to a reactor without deterioration, said manifold collecting said reactant materials, said shower head serving to spray the mixed reactant materials; and depositing a ferroelectric thin film, on the wafer in said reactor while purging residual gas from the conduits.
Claim 2
Independent Claim
111 words
A method for forming a ferroelectric thin film on a wafer, comprising the steps of: inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power; setting an optimal process condition in which the ions dissociated from said reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures; supplying said reactant materials through conduits, a manifold and a shower head to a reactor without deterioration, said manifold collecting said reactant materials, said shower head serving to spray the mixed reactant materials; and depositing a ferroelectric thin film, on the wafer in said reactor while purging residual gas from the conduits.
Claim 3
Dependent Claim
37 words
A method in accordance with claim 1, wherein said purging is carried out by use of sublimated chemicals carrying amine group or N 2 gas and said residual gas is exhausted through said manifold by a pump.
Claim 4
Dependent Claim
26 words
A method in accordance with claim 1, wherein said conduits are heated at 200° to 300° C. whereby recondensing of the dissociated reactant materials is prevented.
Claim 5
Dependent Claim
33 words
A method in accordance with claim 1, wherein said shower head is maintained at 200° to 250° C. whereby said reactant materials are prevented from experiencing a gas phase reaction to form particles.
Claim 6
Dependent Claim
39 words
A method in accordance with claim 1, further comprising the step of: etching undesirable by-products deposited within said reactor with CF 4 or C 2 F 6 , NF 3 , SF 4 and O 2 purified by plasma.
Claim 7
Dependent Claim
25 words
A method in accordance with claim 1, wherein said reactant materials are those in which an amine group can be in-situ synthesized as a ligand.
Claim 8
Dependent Claim
26 words
A method in accordance with claim 6, wherein said amine group is in-situ synthesized by using NET 3 or NH 2 R as a carrier gas.
Claim 9
Dependent Claim
17 words
A method in accordance with claim 1, wherein said ferroelectric thin film is a BST thin film.
Claim 10
Independent Claim
142 words
A method for forming a ferroelectric thin film on a wafer, comprising the steps of: inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power; setting an optimal process condition in which the ions dissociated from said reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures; combining an amine ligand with said reactant materials and supplying the combined reactant materials through conduits, a manifold and a shower head to a reactor at a high temperature under a low vapor pressure without deterioration, said manifold collecting said reactant materials, said shower head serving to spray the mixed reactant materials; controlling the temperatures of said conduits, said manifold and said shower head; and depositing a ferroelectric thin film on the wafer in said reactor while purging residual gas from the conduits.
Claim 11
Independent Claim
142 words
A method for forming a ferroelectric thin film on a wafer, comprising the steps of: inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power; setting an optimal process condition in which the ions dissociated from said reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures; combining an amine ligand with said reactant materials and supplying the combined reactant materials through conduits, a manifold and a shower head to a reactor at a high temperature under a low vapor pressure without deterioration, said manifold collecting said reactant materials, said shower head serving to spray the mixed reactant materials; controlling the temperatures of said conduits, said manifold and said shower head; and depositing a ferroelectric thin film on the wafer in said reactor while purging residual gas from the conduits.
Claim 12
Dependent Claim
17 words
A method in accordance with claim 9, wherein said ferroelectric thin film is an SAO thin film.
Claim 13
Dependent Claim
17 words
A method in accordance with claim 9, wherein said ferroelectric thin film is a BTO thin film.
Claim 14
Dependent Claim
37 words
A method in accordance with claim 9, wherein said purging is carried out by use of sublimated chemicals carrying amine group or N 2 gas and said residual gas is exhausted through said manifold by a pump.
Claim 15
Dependent Claim
29 words
A method in accordance with claim 12, wherein said conduits are heated at 200° to 300° C. to prevent recondensing of the dissociated reactant materials and gas for purging.
Claim 16
Dependent Claim
40 words
A method in accordance with claim 9, wherein said shower head is maintained at 200° to 250° C. to prevent said reactant materials from experiencing a gas phase reaction to form particles and said RF power is an alternative type.
Claim 17
Dependent Claim
39 words
A method in accordance with claim 9, further comprising the step of: etching undesirable by-products deposited within said reactor with CF 4 or C 2 F 6 , NF 3 , SF 4 and O 2 purified by plasma.
Claim 18
Independent Claim
104 words
An apparatus for forming a ferroelectric thin film, comprising: a chamber body defining a depositing space; a manifold provided over the chamber body for collecting reactant materials; a shower head means for converting the reactant materials of the manifold into a gaseous state and for spraying the reactant materials in the gaseous state on a wafer; a baffle guide means surrounding the shower head, the wafer and a heating block, for preventing the gas sprayed from the shower head from expanding widely and from leaking directly into a vacuum port; and a plate for RF electrode provided over the wafer and for forming plasma.
Claim 19
Independent Claim
104 words
An apparatus for forming a ferroelectric thin film, comprising: a chamber body defining a depositing space; a manifold provided over the chamber body for collecting reactant materials; a shower head means for converting the reactant materials of the manifold into a gaseous state and for spraying the reactant materials in the gaseous state on a wafer; a baffle guide means surrounding the shower head, the wafer and a heating block, for preventing the gas sprayed from the shower head from expanding widely and from leaking directly into a vacuum port; and a plate for RF electrode provided over the wafer and for forming plasma.
Claim 20
Dependent Claim
40 words
An apparatus in accordance with claim 16, further comprising a means for maintaining or controlling the manifold at a predetermined temperature in order not to re-condense reactant materials into their liquid or solid phase at ordinary temperature in the manifold.
Claim 21
Dependent Claim
38 words
An apparatus in accordance with claim 16, wherein said plate for RF electrode is a mesh type in which wires with a diameter of 0.5 to 1.5 mm are arranged at an interval of 2 to 3 mm.
Claim 22
Dependent Claim
32 words
An apparatus in accordance with claim 16, wherein said baffle guide is made of an electrically insulating material and is 3-5 mm apart from a plate on which said wafer is placed.
References Cited (Backward Citations)
US5187638A
Cited
US5489548A
Cited
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