US5668039A
Expired / Lapsed
US
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Method for forming crown-shape capacitor node with tapered etching
Assignee: Vanguard International Semiconductor Corp
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Filing: 1996-12-05
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Granted: 1997-09-16
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Expires: 2016-12-05
Abstract
Abstract A crown-shape capacitor node is formed using a tapered etching process to increase the capacitance of the capacitor. A doped polysilicon layer is deposited over a substrate from which the capacitor node is formed. A tapered trench is formed in a doped polysilicon layer using a mask layer. The mask layer is removed and a dielectric layer is deposited over the doped polysilicon layer and filling the tapered trench. The dielectric layer is then etched back, leaving residual portions in the tapered trench. The doped polysilicon layer is then etched using the dielectric material in the tapered trench as an etching mask. The resulting capacitor node has tapered sidewalls, which increases the surface area of the capacitor node, thereby increasing the capacitor's capacitance. The mask layer can be formed so that the tapered etching process forms the capacitor node with either tapered exterior sidewalls or a tapered trench.
Inventors
- 👤 Yeh-Sen Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 01:04
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
145 words
A method for forming an integrated circuit capacitor node on a semiconductor substrate, said semiconductor substrate having a first dielectric layer with a hole formed therein, said method comprising: forming a first conductive layer over said semiconductor substrate, said first conductive layer filling said hole; forming a mask layer over said first conductive layer; removing portions of said first conductive layer not covered by said mask layer, wherein a tapered trench in said first conductive layer is formed; removing said mask layer; forming a second dielectric layer on said first conductive layer, said second dielectric layer filling said tapered trench; removing portions of said first conductive layer not covered by said second dielectric layer; and removing said second dielectric layer, wherein a residual portion of said first conductive layer has a tapered sidewall, said residual portion of said first conductive layer implementing said capacitor node.
Claim 2
Independent Claim
145 words
A method for forming an integrated circuit capacitor node on a semiconductor substrate, said semiconductor substrate having a first dielectric layer with a hole formed therein, said method comprising: forming a first conductive layer over said semiconductor substrate, said first conductive layer filling said hole; forming a mask layer over said first conductive layer; removing portions of said first conductive layer not covered by said mask layer, wherein a tapered trench in said first conductive layer is formed; removing said mask layer; forming a second dielectric layer on said first conductive layer, said second dielectric layer filling said tapered trench; removing portions of said first conductive layer not covered by said second dielectric layer; and removing said second dielectric layer, wherein a residual portion of said first conductive layer has a tapered sidewall, said residual portion of said first conductive layer implementing said capacitor node.
Claim 3
Dependent Claim
16 words
The method according to claim 1, wherein said first conductive layer comprises a doped polysilicon layer.
Claim 4
Dependent Claim
17 words
The method according to claim 2, wherein said first conductive layer is formed using a LPCVD method.
Claim 5
Dependent Claim
18 words
The method according to claim 2, wherein said first conductive layer has a thickness of about 4000-10000 angstroms.
Claim 6
Dependent Claim
24 words
The method according to claim 1, wherein removing portions of said first conductive layer comprises a first etching process and a second etching process.
Claim 7
Dependent Claim
16 words
The method according to claim 5, wherein said first etching process comprises an anisotropic etching process.
Claim 8
Dependent Claim
39 words
The method according to claim 6, wherein said first etching process uses a Cl 2 gas flow of about 70 sccm, a HBr gas flow of about 60 sccm, and a O 2 gas flow of about 6 sccm.
Claim 9
Dependent Claim
27 words
The method according to claim 6, wherein said first etching process comprises using an excitation power of about 550 W and a pressure of about 250 mtorr.
Claim 10
Dependent Claim
31 words
The method according to claim 6, wherein said first etching process comprises using time mode control to form a rectangularly shaped trench extending into but not through said first conductive layer.
Claim 11
Dependent Claim
18 words
The method according to claim 9, wherein said rectangularly shaped trench has a depth of about 500-2000 angstroms.
Claim 12
Dependent Claim
17 words
The method according to claim 5, wherein said second etching process comprises using a tapered etching method.
Claim 13
Dependent Claim
23 words
The method according to claim 11, wherein said tapered etching method forms a tapered trench from a bottom surface of said rectangular trench.
Claim 14
Dependent Claim
40 words
The method according to claim 11, wherein said tapered etching method comprises uses a Cl 2 gas flow of about 420 sccm, a HBr gas flow of about 50 sccm, and a O 2 gas flow of about 3 sccm.
Claim 15
Dependent Claim
27 words
The method according to claim 13, wherein said tapered etching method comprises using an excitation power of about 300 W and a pressure of about 525 mtorr.
Claim 16
Dependent Claim
27 words
The method according to claim 1, wherein said second dielectric layer has a thickness of about 4000-10000 angstroms over a top surface of said first conductive layer.
Claim 17
Dependent Claim
27 words
The method according to claim 1, wherein said second dielectric layer is formed of a material selected from a group consisting of TEOS oxide, BPSG, and SOG.
Claim 18
Dependent Claim
24 words
The method according to claim 1, wherein an upper portion of said second dielectric layer is removed leaving residual portions in said tapered trench.
Claim 19
Dependent Claim
37 words
The method according to claim 1, wherein forming a mask layer over said first conductive layer comprises forming said mask layer so that an etching mask covers a portion of said first conductive layer over said hole.
Claim 20
Dependent Claim
31 words
The method according to claim 18, wherein said tapered trench exposes a top surface of said first dielectric layer, said tapered trench forming a tapered exterior sidewall of said capacitor node.
Claim 21
Dependent Claim
32 words
The method according to claim 19, wherein removing portions of said first conductive layer not covered by said second dielectric layer forms a trench extending into but not through said capacitor node.
Claim 22
Dependent Claim
38 words
The method according to claim 1, wherein forming a mask layer over said first conductive layer comprises forming said mask layer so that said mask layer leaves uncovered a portion of said first conductive layer over said hole.
Claim 23
Dependent Claim
19 words
The method according to claim 21, wherein said tapered trench extends into but not through said first conductive layer.
Claim 24
Dependent Claim
16 words
The method according to claim 22, wherein said tapered trench is located in said capacitor node.
Claim 25
Dependent Claim
40 words
The method according to claim 22, wherein removing portions of said first conductive layer not covered by said second dielectric layer forms a trench extending through said first conductive layer and exposing a top surface of said first dielectric layer.
Claim 26
Dependent Claim
24 words
The method according to claim 24 wherein said trench extending through said first conductive layer forms an exterior side wall of said capacitor node.
References Cited (Backward Citations)
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