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US5663909A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of erasing a flash memory device

Assignee: SK Hynix Inc
•
Filing: 1996-07-01
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Granted: 1997-09-02
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Expires: 2016-07-01
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Abstract

Abstract A method of erasing a flash memory device which can reduce the erasure time by performing an erasure and an erasure verification on a plane by plane basis, when performing a chip erase having a plurality of planes is disclosed.

Inventors

  • 👤 Hyun Soo Sim

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 09:44
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3436; G11C16/344; G11C16/3445; G11C16/10; G11C16/14; G11C16/16

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 86 words
A method of erasing a chip having into a plurality of planes of a flash memory device, comprising the steps of: erasing a first plane; performing an erasure verification for said first plane and an erasure operation for a second plane at the same time; performing an erasure verification for said second plane and an erasure operation for a third plane at the same time; and performing an erasure verification for said third plane and an erasure operation for a fourth plane at the same time.
Claim 2
Independent Claim 86 words
A method of erasing a chip having into a plurality of planes of a flash memory device, comprising the steps of: erasing a first plane; performing an erasure verification for said first plane and an erasure operation for a second plane at the same time; performing an erasure verification for said second plane and an erasure operation for a third plane at the same time; and performing an erasure verification for said third plane and an erasure operation for a fourth plane at the same time.
Claim 3
Dependent Claim 29 words
A method of erasing a flash memory device claimed in claim 1, wherein said erase verification is performed at the plane of which an erasure operation is already performed.
Claim 4
Dependent Claim 37 words
A method of erasing a flash memory device claimed in claim 1, wherein said erasure operation and erasure verification operation is performed during a longer performing time between an erasure perform time and an erasure verification time.
Claim 5
Dependent Claim 28 words
A method of erasing a flash memory device claimed in claim 1 wherein, during erasing said first plane, an erase operation is not performed at the residual planes.
Claim 6
Dependent Claim 32 words
A method of erasing a flash memory device claimed in claim 1, wherein, during performing an erasure verification of said fourth plane an erasure operation is not performed at the residual planes.

References Cited (Backward Citations)

US5396468A Cited
US5339279A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-09-01 2001-03-03 2001-09-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-09-01 2005-03-03 2005-09-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-09-01 2009-03-03 2009-09-02 $7700.00 Window Closed / Lapsed

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