US5663583A
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Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate
Assignee: The AT&T MVPD Group LLC
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Filing: 1995-06-06
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Granted: 1997-09-02
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Expires: 2015-06-06
Abstract
Abstract An epitaxial structure and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure includes an N-type barrier layer comprising a wide-gap semiconductor material having the formula Al 1-y Ga y P 0 .71+z Sb 0 .29-z.
Inventors
- 👤 Mehran Matloubian
- 👤 Takyiu Liu
- 👤 Chanh Nguyen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:33
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D62/00; H10D62/80; H10D62/85; H10D62/852
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
82 words
A method of making an epitaxial structure for a field-effect transistor, the steps comprising: providing a channel layer over a semiconductive support, said channel layer comprising a first narrow-gap semiconductor material; and providing a barrier layer over the channel layer, said barrier layer comprising a first wide-gap semiconductor material comprising Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein y has a value between about 0 to about 0.3 and z has a value between about -0.21 and about 0.29.
Claim 2
Independent Claim
82 words
A method of making an epitaxial structure for a field-effect transistor, the steps comprising: providing a channel layer over a semiconductive support, said channel layer comprising a first narrow-gap semiconductor material; and providing a barrier layer over the channel layer, said barrier layer comprising a first wide-gap semiconductor material comprising Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein y has a value between about 0 to about 0.3 and z has a value between about -0.21 and about 0.29.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein y has a value between about 0 and about 0.1 and z has a value between about -0.1 and about 0.1.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein y has a value of about 0.
Claim 5
Dependent Claim
28 words
The method of claim 1 wherein said first narrow-gap semiconductor material comprises Ga 1-x In x As, wherein x has a value between about 0 to about 0.5.
Claim 6
Dependent Claim
16 words
The method of claim 4 wherein x has a value between about 0.15 and about 0.35.
Claim 7
Dependent Claim
26 words
The method of claim 1 further comprising the step of providing a buffer layer comprising a semiconductor material between the channel layer and the semiconductive support.
Claim 8
Dependent Claim
52 words
The method of claim 6 wherein said semiconductor material comprises a compound selected from the group consisting of GaAs and Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein y has a value between about 0 to about 0.3 and z has a value between about -0.21 and about 0.29.
Claim 9
Dependent Claim
27 words
The method of claim 7 wherein y has a value between about 0 to about 0.1 and z has a value between about -0.1 and about 0.1.
Claim 10
Dependent Claim
31 words
The method of claim 1 further comprising the step of providing a donor layer between the barrier layer and the channel layer, said donor layer comprising a second wide-gap semiconductor material.
Claim 11
Dependent Claim
58 words
The method of claim 9 wherein said second wide-gap semiconductor material comprises a compound selected from the group consisting of Al a Ga 1-a As and Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein y has a value between about 0 to about 0.3 and z has a value between about -0.21 and about 0.29.
Claim 12
Dependent Claim
16 words
The method of claim 9 wherein a has a value between about 0.1 and about 0.5.
Claim 13
Dependent Claim
27 words
The method of claim 9 wherein y has a value between about 0 and about 0.1 and z has a value between about -0.1 and about 0.1.
Claim 14
Dependent Claim
31 words
The method of claim 1 further comprising the step of providing a spacer layer between the barrier layer and the channel layer, said spacer layer comprising a third wide-gap semiconductor material.
Claim 15
Dependent Claim
68 words
The method of claim 13 wherein said third wide-gap semiconductor material comprises a compound selected from the group consisting of Al a Ga 1-a As and Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein a has a value between about 0.1 and about 0.5, y has a value between about 0 to about 0.3 and z has a value between about -0.21 and about 0.29.
Claim 16
Dependent Claim
27 words
The method of claim 14 wherein y has a value between about 0 and about 0.1 and z has a value between about -0.1 and about 0.1.
Claim 17
Dependent Claim
13 words
The method of claim 1 wherein said semiconductive support comprises a GaAs substrate.
Claim 18
Dependent Claim
50 words
The method of claim 1 wherein: said channel layer is provided over said semiconductive support by growing said channel layer over said semiconductive support in a growth chamber; said barrier layer is provided over said channel layer by growing said barrier layer over said channel layer in said growth chamber.
Claim 19
Dependent Claim
28 words
The method of claim 17 wherein said growth chamber is adapted for growth of epitaxial Al 1-y Ga y PSb from an Al 1-y Ga y Sb/AlP superlattice.
Claim 20
Dependent Claim
24 words
The method of claim 17 wherein said growth chamber is adapted for growth of films from a phosphine gas source and a solid-source antimony.
Claim 21
Dependent Claim
27 words
The method of claim 1 further comprising the step of providing a cap layer over the barrier layer, said cap layer comprising a second narrow-gap semiconductor material.
Claim 22
Dependent Claim
13 words
The method of claim 1 wherein said second narrow-gap semiconductor material is GaAs.
Claim 23
Dependent Claim
74 words
An epitaxial structure for a field-effect transistor comprising: a channel layer over a semiconductive support, said channel layer comprising a first narrow-gap semiconductor material; and a barrier layer over the channel layer, said barrier layer comprising a first wide-gap semiconductor material comprising Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein y has a value between about 0 to about 0.3 and z has a value between about -0.21 and about 0.29.
Claim 24
Dependent Claim
74 words
An epitaxial structure for a field-effect transistor comprising: a channel layer over a semiconductive support, said channel layer comprising a first narrow-gap semiconductor material; and a barrier layer over the channel layer, said barrier layer comprising a first wide-gap semiconductor material comprising Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein y has a value between about 0 to about 0.3 and z has a value between about -0.21 and about 0.29.
Claim 25
Dependent Claim
14 words
The epitaxial structure of claim 22 wherein said semiconductive support comprises a GaAs substrate.
Claim 26
Dependent Claim
42 words
The epitaxial structure of claim 23, further comprising: a buffer layer between the semiconductive support and the channel layer, said buffer layer comprising a semiconductor material; a cap layer over the barrier layer, said cap layer comprising a second narrow-gap semiconductor material.
Claim 27
Dependent Claim
70 words
The epitaxial structure of claim 24 wherein: said first narrow-gap semiconductor material comprises Ga 1-x In x As; said semiconductor material comprises a compound selected from the group consisting of GaAs and Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein y has a value between about 0 and 0.1 and z has a value between about -0.1 and 0.1; and said second narrow-gap semiconductor material comprises GaAs.
Claim 28
Dependent Claim
28 words
The epitaxial structure of claim 25 further comprising a donor layer between the channel layer and the barrier layer, said donor layer comprising a second wide-gap semiconductor material.
Claim 29
Dependent Claim
28 words
The epitaxial structure of claim 26 further comprising a spacer layer between the channel layer and the donor layer, said spacer layer comprising a third wide-gap semiconductor material.
Claim 30
Dependent Claim
61 words
The epitaxial structure of claim 27 wherein: said second wide-gap semiconductor material and said third wide-gap semiconductor material are selected from the group consisting of Al a Ga 1-a As and Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein y has a value between about 0 and 0.1 and z has a value between about -0.1 and 0.1.
Claim 31
Dependent Claim
49 words
The epitaxial structure of claim 28 wherein said second wide-gap semiconductor material and said third wide-gap semiconductor material are Al 1-y Ga y P 0 .71+z Sb 0 .29-z, wherein y has a value between about 0 and 0.1 and z has a value between about -0.1 and 0.1.
Claim 32
Dependent Claim
27 words
The epitaxial structure of claim 29 wherein: x has a value between about 0 to about 0.5; a has a value between about 0.1 and about 0.5.
Claim 33
Dependent Claim
26 words
The epitaxial structure of claim 29 wherein y has a value between about 0 and 0.1 and z has a value between about -0.1 and 0.1.
Claim 34
Dependent Claim
14 words
The epitaxial structure of claim 29 wherein y has a value of about 0.
References Cited (Backward Citations)
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