US5662772A
Expired / Lapsed
US
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Method for the selective removal of silicon dioxide
Assignee: Siemens AG
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Filing: 1996-04-24
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Granted: 1997-09-02
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Expires: 2016-04-24
Abstract
Abstract In a method for the selective removal of SiO2 relative to semiconductor materials and/or metal, a specimen to be processed and containing SiO2 is placed into a chamber having at least one gas admission opening and one gas outlet opening. Using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor are admitted into the chamber. These gasses proceed to the SiO2 in a specimen in a quantity adequate for etching. However, the quantities of these gasses are limited such that a condensation of the water vapor to form liquid water on the specimen during the etching event is avoided. An etching event is then implemented. Water vapor that arises as a reaction product during the etching is eliminated through the gas outlet opening before the occurrence of condensation and, simultaneously, an inert gas is admitted into the chamber through the gas admission opening. These steps are repeated as needed.
Inventors
- 👤 Thomas Scheiter
- 👤 Ulrich Naeher
- 👤 Christofer Hierold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:40
CPC Classifications
C; C23; C23F; C23F1/00; C23F1/10; C23F1/12; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
193 words
A method for selective removal of SiO 2 relative to semiconductor materials and/or metal on semiconductor components, comprising the steps of: a) placing a semiconductor component containing SiO 2 into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the SiO 2 in said semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching of the semiconductor component through the gas outlet opening before occurrence of condensation and, simultaneously, admitting an inert gas into the chamber through the gas admission opening; and e) repeating steps b) through d) until the SiO 2 is selectively removed, movable micromechanical function elements of polysilicon thereby being etched free.
Claim 2
Independent Claim
193 words
A method for selective removal of SiO 2 relative to semiconductor materials and/or metal on semiconductor components, comprising the steps of: a) placing a semiconductor component containing SiO 2 into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the SiO 2 in said semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching of the semiconductor component through the gas outlet opening before occurrence of condensation and, simultaneously, admitting an inert gas into the chamber through the gas admission opening; and e) repeating steps b) through d) until the SiO 2 is selectively removed, movable micromechanical function elements of polysilicon thereby being etched free.
Claim 3
Dependent Claim
17 words
The method according to claim 1, wherein nitrogen is employed as the inert gas in step d).
Claim 4
Dependent Claim
30 words
The method according to claim 1, wherein controllable valves are employed in step b) that are provided with mass flowmeters, and gas quantities flowing through these valves are electronically regulated.
Claim 5
Independent Claim
192 words
A method for selective removal of SiO 2 relative to semiconductor materials and/or metal on semiconductor components, comprising the steps of: a) placing a semiconductor component containing SiO 2 into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the SiO 2 in said semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching of the semiconductor component through the gas outlet opening before occurrence of condensation and, simultaneously, admitting an inert gas into the chamber through the gas admission opening; and e) repeating steps b) through d) until the SiO 2 is selectively removed, micromechanical function elements of aluminum thereby being etched free.
Claim 6
Independent Claim
192 words
A method for selective removal of SiO 2 relative to semiconductor materials and/or metal on semiconductor components, comprising the steps of: a) placing a semiconductor component containing SiO 2 into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the SiO 2 in said semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching of the semiconductor component through the gas outlet opening before occurrence of condensation and, simultaneously, admitting an inert gas into the chamber through the gas admission opening; and e) repeating steps b) through d) until the SiO 2 is selectively removed, micromechanical function elements of aluminum thereby being etched free.
Claim 7
Dependent Claim
17 words
The method according to claim 4, wherein nitrogen is employed as the inert gas in step d).
Claim 8
Dependent Claim
30 words
The method according to claim 4, wherein controllable valves are employed in step b) that are provided with mass flowmeters, and gas quantities flowing through these valves are electronically regulated.
Claim 9
Independent Claim
182 words
A method for selective removal of silicon and/or metal on a semiconductor component, comprising the steps of: a) placing a semiconductor component into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching through the gas outlet opening before occurrence of condensation and, simultaneously, admitting nitrogen into the chamber through the gas admission opening; and e) repeating steps b) through d) until the silicon is selectively removed at the semiconductor component, the semiconductor component being movable micromechanical function elements of polysilicon are etched free.
Claim 10
Independent Claim
182 words
A method for selective removal of silicon and/or metal on a semiconductor component, comprising the steps of: a) placing a semiconductor component into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching through the gas outlet opening before occurrence of condensation and, simultaneously, admitting nitrogen into the chamber through the gas admission opening; and e) repeating steps b) through d) until the silicon is selectively removed at the semiconductor component, the semiconductor component being movable micromechanical function elements of polysilicon are etched free.
Claim 11
Dependent Claim
30 words
The method according to claim 7, wherein controllable valves are employed in step b) that are provided with mass flowmeters, and gas quantities flowing through these valves are electronically regulated.
Claim 12
Dependent Claim
30 words
The method according to claim 7, wherein controllable valves are employed in step b) that are provided with mass flowmeters, and gas quantities flowing through these valves are electronically regulated.
Claim 13
Independent Claim
181 words
A method for selective removal of silicon and/or metal on a semiconductor component, comprising the steps of: a) placing a semiconductor component into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching through the gas outlet opening before occurrence of condensation and, simultaneously, admitting nitrogen into the chamber through the gas admission opening; and e) repeating steps b) through d) until the silicon is selectively removed at the semiconductor component, the semiconductor component being micromechanical function elements of aluminum are etched free.
Claim 14
Independent Claim
181 words
A method for selective removal of silicon and/or metal on a semiconductor component, comprising the steps of: a) placing a semiconductor component into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching through the gas outlet opening before occurrence of condensation and, simultaneously, admitting nitrogen into the chamber through the gas admission opening; and e) repeating steps b) through d) until the silicon is selectively removed at the semiconductor component, the semiconductor component being micromechanical function elements of aluminum are etched free.
Claim 15
Independent Claim
208 words
A method for selective removal of SiO 2 relative to semiconductor materials and/or metal on semiconductor components, comprising the steps of: a) placing a semiconductor component containing SiO 2 into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the SiO 2 in said semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided, said controllable valves having mass flowmeters, and electronically regulating gas quantities flowing through said valves; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching of the semiconductor component through the gas outlet opening before occurrence of condensation and, simultaneously, admitting an inert gas into the chamber through the gas admission opening; and e) repeating steps b) through d) until the SiO 2 is selectively removed, movable micromechanical function elements of polysilicon thereby being etched free.
Claim 16
Independent Claim
208 words
A method for selective removal of SiO 2 relative to semiconductor materials and/or metal on semiconductor components, comprising the steps of: a) placing a semiconductor component containing SiO 2 into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the SiO 2 in said semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided, said controllable valves having mass flowmeters, and electronically regulating gas quantities flowing through said valves; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching of the semiconductor component through the gas outlet opening before occurrence of condensation and, simultaneously, admitting an inert gas into the chamber through the gas admission opening; and e) repeating steps b) through d) until the SiO 2 is selectively removed, movable micromechanical function elements of polysilicon thereby being etched free.
Claim 17
Dependent Claim
17 words
The method according to claim 11, wherein nitrogen is employed as the inert gas in step d).
Claim 18
Independent Claim
206 words
A method for selective removal of SiO 2 relative to semiconductor materials and/or metal on semiconductor components, comprising the steps of: a) placing a semiconductor component containing SiO 2 into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the SiO 2 in said semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided, said controllable valves having mass flowmeters, and electronically regulating gas quantities flowing through said valves; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching of the semiconductor component through the gas outlet opening before occurrence of condensation and, simultaneously, admitting an inert gas into the chamber through the gas admission opening; and e) repeating steps b) through d) until the SiO 2 is selectively removed, micromechanical function elements of aluminum are etched free.
Claim 19
Independent Claim
206 words
A method for selective removal of SiO 2 relative to semiconductor materials and/or metal on semiconductor components, comprising the steps of: a) placing a semiconductor component containing SiO 2 into a chamber having at least one gas admission opening and one gas outlet opening; b) admitting, using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor into the chamber, so that said gas and said water vapor proceed to the SiO 2 in said semiconductor component in a quantity sufficient for etching, quantities of said gas and said water vapor being limited such that condensation of the water vapor, that forms liquid water on said semiconductor component during the etching event, is avoided, said controllable valves having mass flowmeters, and electronically regulating gas quantities flowing through said valves; c) implementing an etching event at the semiconductor component; d) eliminating water vapor that arises as a reaction product during the etching of the semiconductor component through the gas outlet opening before occurrence of condensation and, simultaneously, admitting an inert gas into the chamber through the gas admission opening; and e) repeating steps b) through d) until the SiO 2 is selectively removed, micromechanical function elements of aluminum are etched free.
Claim 20
Dependent Claim
17 words
The method according to claim 13, wherein nitrogen is employed as the inert gas in step d).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-01 | 2001-03-03 | 2001-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-01 | 2005-03-03 | 2005-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-01 | 2009-03-03 | 2009-09-02 | $7700.00 | Window Closed / Lapsed |