US5661086A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing a plurality of strip lead frame semiconductor devices
Assignee: Mitsui High Tec Inc
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Filing: 1996-01-11
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Granted: 1997-08-26
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Expires: 2016-01-11
Abstract
Abstract Method for producing semiconductor devices comprises a first step in which a plurality of metal substrates each of which is provided with a die mounting region at a central portion thereof are connected in series to produce a train of connected metal substrates by means of first connecting tabs and a pair of first side rails each of which is provided with first positioning pilot apertures are connected to the train by means of second connecting tabs to produce a metal substrate frame, a second step in which a plurality of circuit substrates each of which is provided with a lead pattern around an opening formed at the central portion thereof are connected in series by means of third connecting tabs to produce a train of connected circuit substrates and a pair of second side rails each of which is provided with second positioning pilot apertures are connected by fourth connecting tabs to produce a circuit substrate frame, a third step in which both frames are alinged with each other making use of the first and second positioning pilot apertures and are adhered with each other to produce a die mounting substrate frame, and a fourth step in which a semiconductor die is received in a cavity defined by the die mounting region and the opening of each die mounting substrate and solder balls are connected to terminal pads which form one ends of the lead pattern while pads of the semiconductor die are connected to wire bonding pads which form other ends of the lead pattern, and connecting tabs are removed so as to produce separate semiconductor devices.
Inventors
- 👤 Takashi Nakashima
- 👤 Keiji Takai
- 👤 Kouji Tateishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:32
CPC Classifications
H; H10; H10W; H10W90/00; H10W90/701; H10W70/00; H10W70/01; H10W70/05; H10W70/60; H10W70/67; H10W70/68; H10W74/00; H10W74/10; H10W74/111; H10W74/114; H10W74/117; H10W99/00; H10W70/682; H10W70/685; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
566 words
A method for producing semiconductor devices comprising: a) a first step for producing a frame made of connected metal substrates, wherein connected metal substrate members which comprise a plurality of metal substrate members each of which have a die mounting region at a central portion of a front surface thereof and which are connected in one direction by means of a plurality of first connecting tabs and a plurality of first side rails which are disposed in parallel at both sides of said metal substrate members and are connected with said metal substrate members by means of a plurality of second connecting tabs and are provided with a plurality of first positioning pilot apertures are formed from a copper material and subsequently an erosion preventing plating is applied to an entire surface of said metal substrate members to produce said connected metal substrates, b) a second step for producing a frame made of connected circuit substrates comprising the following sub-steps, i) a first shape forming sub step wherein a plurality of circuit substrate members which are respectively provided with openings being aligned with said die mounting regions and are connected in one direction by means of a plurality of third connecting tabs and a plurality of second side rails which are disposed in parallel at both sides of said circuit substrate members and are connected with said metal substrate members by means of a plurality of fourth connecting tabs and are provided with a plurality of second positioning apertures being aligned with said first positioning pilot apertures formed from a substrate material sheet which is provided with a copper leaf on a front surface thereof, ii) a second lead pattern producing sub-step wherein an etching is made on said circuit substrate members so as to provide a plurality of conductive leads each of which forms a wire bonding pad at an inner end thereof and a terminal pad at an outer end, and said wire bonding pads and said terminal pads are provided with platings of a metal, iii) a third solder resist layer forming sub-step, wherein a solder resist layer is formed on a surface of said conductive leads with an exception of said wire bonding pads and said terminal pads, c) a third step for producing a frame made of connected semiconductor die mounting substrates wherein said frame made of connected metal substrates produced in said first step and said frame made of connected circuit substrates produced in said second step are aligned with each other using said first and second positioning pilot apertures formed in said frames as reference apertures, a plurality of said circuit substrates are separated from said frame made of connected circuit substrates by removing said third and fourth connecting tabs and said separated circuit substrates are adhered to said metal substrates by means of an electrically insulating adhesive agent so as to produce said frame made of connected semiconductor die mounting substrates, and d) a fourth step for producing a plurality of independent semiconductor devices wherein a semiconductor die is mounted in a cavity defined by each said die mounting region and each said opening aligned with each said die mounting portion, and a solder ball is welded to each said terminal pad, and said first and second connecting tabs are removed from an outer frame including said first side rails so as to produce said independent semiconductor devices.
Claim 2
Independent Claim
566 words
A method for producing semiconductor devices comprising: a) a first step for producing a frame made of connected metal substrates, wherein connected metal substrate members which comprise a plurality of metal substrate members each of which have a die mounting region at a central portion of a front surface thereof and which are connected in one direction by means of a plurality of first connecting tabs and a plurality of first side rails which are disposed in parallel at both sides of said metal substrate members and are connected with said metal substrate members by means of a plurality of second connecting tabs and are provided with a plurality of first positioning pilot apertures are formed from a copper material and subsequently an erosion preventing plating is applied to an entire surface of said metal substrate members to produce said connected metal substrates, b) a second step for producing a frame made of connected circuit substrates comprising the following sub-steps, i) a first shape forming sub step wherein a plurality of circuit substrate members which are respectively provided with openings being aligned with said die mounting regions and are connected in one direction by means of a plurality of third connecting tabs and a plurality of second side rails which are disposed in parallel at both sides of said circuit substrate members and are connected with said metal substrate members by means of a plurality of fourth connecting tabs and are provided with a plurality of second positioning apertures being aligned with said first positioning pilot apertures formed from a substrate material sheet which is provided with a copper leaf on a front surface thereof, ii) a second lead pattern producing sub-step wherein an etching is made on said circuit substrate members so as to provide a plurality of conductive leads each of which forms a wire bonding pad at an inner end thereof and a terminal pad at an outer end, and said wire bonding pads and said terminal pads are provided with platings of a metal, iii) a third solder resist layer forming sub-step, wherein a solder resist layer is formed on a surface of said conductive leads with an exception of said wire bonding pads and said terminal pads, c) a third step for producing a frame made of connected semiconductor die mounting substrates wherein said frame made of connected metal substrates produced in said first step and said frame made of connected circuit substrates produced in said second step are aligned with each other using said first and second positioning pilot apertures formed in said frames as reference apertures, a plurality of said circuit substrates are separated from said frame made of connected circuit substrates by removing said third and fourth connecting tabs and said separated circuit substrates are adhered to said metal substrates by means of an electrically insulating adhesive agent so as to produce said frame made of connected semiconductor die mounting substrates, and d) a fourth step for producing a plurality of independent semiconductor devices wherein a semiconductor die is mounted in a cavity defined by each said die mounting region and each said opening aligned with each said die mounting portion, and a solder ball is welded to each said terminal pad, and said first and second connecting tabs are removed from an outer frame including said first side rails so as to produce said independent semiconductor devices.
Claim 3
Dependent Claim
19 words
A method for producing semiconductor devices according to claim 1, wherein said erosion preventing plating is a nickel plating.
Claim 4
Dependent Claim
24 words
A method for producing semiconductor devices according to claim 1, wherein said frame made of said metal substrates is produced by a press treatment.
Claim 5
Dependent Claim
24 words
A method for producing semiconductor devices according to claim 1, wherein said frame made of said metal substrates is produced by an etching treatment.
Claim 6
Dependent Claim
34 words
A method for producing semiconductor devices according to claim 1, wherein said die mounting portions of said metal substrate frame is depressed so as to produce said die mounting portions having a recessed configuration.
Claim 7
Dependent Claim
255 words
A semiconductor device produced by said method for producing semiconductor devices according to claim 1, wherein said device comprises, a) said metal substrate being made of copper material coated with said erosion preventing plating, said metal substrate having said die mounting region at said central portion of said front surface thereof, b) said circuit substrate having a rear surface thereof adhered to a front surface of said metal substrate by way of a prepreg layer, said circuit substrate being provided with said opening which is aligned with said die mounting region of said metal substrate at said central portion thereof, said circuit substrate being provided with said conductive leads each of which has said wire bonding pad at said inner end thereof and said terminal pad at said outer end thereof, wherein said wire bonding pad is exposed to the atmosphere and said terminal end is connected with said solder ball, and said circuit substrate forming a lead pattern on said front surface thereof and being provided with said solder resist layer coating said conductive leads with an exception of said terminal pads and said wire bonding pads, c) said semiconductor die being received in said cavity defined by said die mounting region of said metal substrate and said opening of said circuit substrate, d) bonding wires electrically connecting said wire bonding pads with corresponding pads of said semiconductor dies, and e) a potting resin for hermetically sealing said semiconductor die mounted in said cavity and said bonding wires together with said wire bonding pads.
Claim 8
Dependent Claim
33 words
A semiconductor device according to claim 6, wherein said solder balls are disposed at an outer periphery of said circuit substrate with a pitch in longitudinal and lateral directions forming a grid array.
Claim 9
Dependent Claim
19 words
A semiconductor device according to claim 6, wherein a material of said circuit substrate is glass cloth epoxy resin.
Claim 10
Dependent Claim
18 words
A semiconductor device according to claim 6, wherein a material of said circuit substrate is electrically insulated film.
Claim 11
Dependent Claim
61 words
A semiconductor device according to claim 6, wherein said die mounting region of said metal substrate is indented from a conductive lead region which encircles said die mounting region so as to make a height of pads of said semiconductor die substantially equal to a height of said wire bonding pads which are arranged around said pads of said semiconductor die.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-25 | 2001-02-24 | 2001-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-25 | 2005-02-24 | 2005-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-25 | 2009-02-24 | 2009-08-26 | $7700.00 | Window Closed / Lapsed |