US5658438A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sputter deposition method for improved bottom and side wall coverage of high aspect ratio features
Assignee: Micron Technology Inc
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Filing: 1995-12-19
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Granted: 1997-08-19
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Expires: 2015-12-19
Abstract
Abstract A method of sputter deposition for improved side wall and bottom coverage of high aspect ratio features on a substrate includes alternatingly exposing the substrate having high aspect ratio features to a collimated sputtered particle flux and a less-collimated sputtered particle flux until a desired deposition thickness is reached. A confining magnetic field may be used to reduce electron losses at process chamber walls, allowing for improved collimation of the collimated flux. The substrate may also be heated or biased during exposure to the less-collimated flux to increase the good side wall and step coverage of the less-collimated flux, and cooled or reverse-biased during exposure to the collimated flux to increase the good bottom coverage of the collimated flux. Alternatively, the substrate may be exposed to only a collimated flux, but good sidewall coverage by be achieved by alternating the temperature and/or bias of the substrate to provide the desired side wall and step coverage.
Inventors
- 👤 John H. Givens
- 👤 Richard L. Elliott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:32
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/04; C23C14/046; C23C14/22; C23C14/34; C23C14/35; C23C14/352; H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
104 words
A method for improved sputter deposition of structures in a semiconductor device comprising: providing a substrate having thereon spaces to be filled; and exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux by alternately exposing said substrate to: a first sputtered particle flux from a target having a crystal structure preferentially oriented to maximize collimation of said first sputtered particle flux, and a second sputtered particle flux from a target having a crystal structure not preferentially oriented to maximize collimation of said second sputtered particle flux; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 2
Independent Claim
104 words
A method for improved sputter deposition of structures in a semiconductor device comprising: providing a substrate having thereon spaces to be filled; and exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux by alternately exposing said substrate to: a first sputtered particle flux from a target having a crystal structure preferentially oriented to maximize collimation of said first sputtered particle flux, and a second sputtered particle flux from a target having a crystal structure not preferentially oriented to maximize collimation of said second sputtered particle flux; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 3
Dependent Claim
12 words
The method as defined in claim 1, wherein said substrate remains stationary.
Claim 4
Dependent Claim
44 words
The method as defined in claim 1 wherein said substrate is moved from a first position at which said substrate is exposed to said first sputtered particle flux to a second position at which said substrate is exposed to said second sputtered particle flux.
Claim 5
Dependent Claim
34 words
The method as defined in claim 1, further comprising providing a confining magnetic field extending from a target to the substrate to confine electrons, whereby the pressure required for sputtering to occur is decreased.
Claim 6
Independent Claim
219 words
A method for improved sputter deposition of structures in a semiconductor device comprising: providing a substrate having thereon spaces to be filled; providing a first target to be sputtered; providing a sputtering chamber having chamber walls; positioning said first target and said substrate in said chamber; striking a plasma in said chamber while confining electrons associated with said plasma in a magnetic field extending from near said first target to near said substrate, said magnetic field oriented to repel electrons approaching said chamber walls; maintaining said plasma at a pressure in a range of about 0.1 mTorr to 2 mTorr; sputtering said first target in said plasma and allowing sputtered particles of said first target to deposit on said substrate; positioning a second target in said chamber; and sputtering said second target in said plasma and allowing sputtered particles of said second target to deposit on said substrate, wherein said substrate is exposed to sputtered particles of said first target and sputtered particles of said second target in alternation, and wherein said first target has a crystal structure which enhances the collimation of sputtered particles of said first target relative to the collimation of the sputtered particles of said second target; whereby said low pressure reduces scattering of said sputtered particles, resulting in improved film deposition in said spaces.
Claim 7
Independent Claim
219 words
A method for improved sputter deposition of structures in a semiconductor device comprising: providing a substrate having thereon spaces to be filled; providing a first target to be sputtered; providing a sputtering chamber having chamber walls; positioning said first target and said substrate in said chamber; striking a plasma in said chamber while confining electrons associated with said plasma in a magnetic field extending from near said first target to near said substrate, said magnetic field oriented to repel electrons approaching said chamber walls; maintaining said plasma at a pressure in a range of about 0.1 mTorr to 2 mTorr; sputtering said first target in said plasma and allowing sputtered particles of said first target to deposit on said substrate; positioning a second target in said chamber; and sputtering said second target in said plasma and allowing sputtered particles of said second target to deposit on said substrate, wherein said substrate is exposed to sputtered particles of said first target and sputtered particles of said second target in alternation, and wherein said first target has a crystal structure which enhances the collimation of sputtered particles of said first target relative to the collimation of the sputtered particles of said second target; whereby said low pressure reduces scattering of said sputtered particles, resulting in improved film deposition in said spaces.
Claim 8
Dependent Claim
37 words
The method as defined in claim 5, further comprising: providing a collimator; and positioning said collimator in said chamber such that any sputtered particles of said first target must pass through said collimator before reaching said substrate.
Claim 9
Dependent Claim
37 words
The method as defined in claim 6, further comprising moving said collimator to a new position in said chamber such that sputtered particles of said first target need not pass through said collimator before reaching said substrate.
Claim 10
Dependent Claim
34 words
The method as defined in claim 5, further comprising providing a confining magnetic field extending from a target to the substrate to confine electrons, whereby the pressure required for sputtering to occur is decreased.
Claim 11
Independent Claim
84 words
A method for improved sputter deposition of structures in a semiconductor device comprising: providing a substrate having thereon spaces to be filled; exposing said substrate to a collimated sputtered particle flux; and alternating a bias voltage at said substrate between a low and a high value, said low value being within the range of about -30 to 100 V, and said high value being within the range of about -30 to -500 V, whereby said spaces are filled with good bottom and sidewall coverage.
Claim 12
Independent Claim
84 words
A method for improved sputter deposition of structures in a semiconductor device comprising: providing a substrate having thereon spaces to be filled; exposing said substrate to a collimated sputtered particle flux; and alternating a bias voltage at said substrate between a low and a high value, said low value being within the range of about -30 to 100 V, and said high value being within the range of about -30 to -500 V, whereby said spaces are filled with good bottom and sidewall coverage.
Claim 13
Dependent Claim
49 words
The method as defined in claim 9, further comprising alternating the temperature of said substrate between a low and a high value, said low value being within the range of about -15° to 150° C., and said high value being within the range of about 150° to 700° C.
Claim 14
Dependent Claim
59 words
The method as defined in claim 9, wherein said substrate remains stationary and a collimator is moved from a position in said chamber at which a given sputtered particle flux must pass through said collimator before reaching said substrate to a position at which said given sputtered particle flux need not pass through said collimator before reaching said substrate.
Claim 15
Independent Claim
153 words
A method for improved splitter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux by alternately exposing said substrate to: a sputtered particle flux that passes through a collimator on its way to said substrate, and a sputtered particle flux that does not pass through a collimator on its way to said substrate; said substrate being moved from a first position at which said substrate is exposed to a sputtered particle flux that passes through a collimator on its way to said substrate, and said substrate being moved to a second position at which said substrate is exposed to a sputtered particle flux that does not pass through a collimator on its way to said substrate; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 16
Independent Claim
153 words
A method for improved splitter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux by alternately exposing said substrate to: a sputtered particle flux that passes through a collimator on its way to said substrate, and a sputtered particle flux that does not pass through a collimator on its way to said substrate; said substrate being moved from a first position at which said substrate is exposed to a sputtered particle flux that passes through a collimator on its way to said substrate, and said substrate being moved to a second position at which said substrate is exposed to a sputtered particle flux that does not pass through a collimator on its way to said substrate; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 17
Dependent Claim
34 words
The method as defined in claim 12, further comprising providing a confining magnetic field extending from a target to the substrate to confine electrons, whereby the pressure required for sputtering to occur is decreased.
Claim 18
Independent Claim
91 words
A method for improved sputter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; and exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux by alternately exposing said substrate to: a sputtered particle flux at a pressure in the range of about 2 to 10 mTorr; and a sputtered particle flux at a pressure in the range of about 0.1 to 2 mTorr; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 19
Independent Claim
91 words
A method for improved sputter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; and exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux by alternately exposing said substrate to: a sputtered particle flux at a pressure in the range of about 2 to 10 mTorr; and a sputtered particle flux at a pressure in the range of about 0.1 to 2 mTorr; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 20
Dependent Claim
34 words
The method as defined in claim 14, further comprising providing a confining magnetic field extending from a target to the substrate to confine electrons, whereby the pressure required for sputtering to occur is decreased.
Claim 21
Independent Claim
115 words
A method for improved sputter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; and exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux, by alternately exposing said substrate to: a first sputtered particle flux sputtered by ions from an ion gun configured and oriented to enhance the collimation of said first sputtered particle flux, and it second sputtered particle flux sputtered by ions from an ion gun configured and oriented to produce said second sputtered particle flux with less collimation than said first sputtered particle flux; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 22
Independent Claim
115 words
A method for improved sputter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; and exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux, by alternately exposing said substrate to: a first sputtered particle flux sputtered by ions from an ion gun configured and oriented to enhance the collimation of said first sputtered particle flux, and it second sputtered particle flux sputtered by ions from an ion gun configured and oriented to produce said second sputtered particle flux with less collimation than said first sputtered particle flux; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 23
Dependent Claim
34 words
The method as defined in claim 16, further comprising providing a confining magnetic field extending from a target to the substrate to confine electrons, whereby the pressure required for sputtering to occur is decreased.
Claim 24
Independent Claim
64 words
A method for improved sputter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux; and alternately providing a high temperature and a low temperature at said substrate; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 25
Independent Claim
64 words
A method for improved sputter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux; and alternately providing a high temperature and a low temperature at said substrate; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 26
Dependent Claim
35 words
The method as defined in claim 18 wherein said high temperature is within the range of about 150° to 700° C., and said low temperature is within the range of about -15° to 150° C.
Claim 27
Dependent Claim
47 words
The method as defined in claim 18, wherein said high temperature is provided at said substrate while said substrate is exposed to said less-collimated sputtered particle flux, and said low temperature is provided at said substrate while said substrate is exposed to said collimated sputtered particle flux.
Claim 28
Dependent Claim
34 words
The method as defined in claim 18, further comprising providing a confining magnetic field extending from a target to the substrate to confine electrons, whereby the pressure required for sputtering to occur is decreased.
Claim 29
Independent Claim
59 words
A method for improved sputter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux; and providing a voltage bias at said substrate; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 30
Independent Claim
59 words
A method for improved sputter deposition of structures in a semiconductor device, said method comprising: providing a substrate having thereon spaces to be filled; exposing said substrate alternately to a collimated sputtered particle flux and a less-collimated sputtered particle flux; and providing a voltage bias at said substrate; whereby said spaces are filled with good bottom and sidewall coverage.
Claim 31
Dependent Claim
58 words
The method as defined in claim 22, wherein providing said voltage bias at said substrate comprises varying the voltage bias at said substrate between a high bias and a low bias, said high bias being in the range of about -30 to -500 V, and said low bias being in the range of about -30 to 100 V.
Claim 32
Dependent Claim
34 words
The method as defined in claim 22, further comprising providing a confining magnetic field extending from a target to the substrate to confine electrons, whereby the pressure required for sputtering to occur is decreased.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-18 | 2001-02-17 | 2001-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-18 | 2005-02-17 | 2005-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-18 | 2009-02-17 | 2009-08-19 | $7700.00 | Window Closed / Lapsed |