Amorphous semiconductor thin film light emitting diode

Claim 2

An amorphous semiconductor thin film light emitting diode comprising: a first metal electrode; a plurality of thin amorphous semiconductor layers capable of emitting light in response to an electric stimuli; a second electrode fabricated from an optically transparent electrically conducting material; the plurality of thin amorphous semiconductor layers being arranged in a sandwich type arrangement in between the first and second electrodes through the plurality of thin amorphous semiconductor layers, and said first metal electrode supporting the thin amorphous semiconductor layers and the second electrode, and thereby comprising a substrate as well as an electrode.

Claim 3

An amorphous semiconductor thin film light emitting diode as in claim 1 wherein the first metal electrode is in form of a sheet having good electrical and thermal conductivities and adapted to be a lustrous, substantially smooth surface and of light weight.

Claim 4

An amorphous semiconductor thin film light emitting diode as in claim 1 wherein the plurality of thin amorphous semiconductor layers have p-i-n junction configuration.

Claim 5

An amorphous semiconductor thin film light emitting diode as in claim 1 wherein the plurality of thin amorphous semiconductor layers have n-i-p junction configurations.

Claim 6

An amorphous semiconductor thin film light emitting diode as in claim 1 wherein the second electrode is a layer of material substantially optically transparent to electro-magnetic radiation emitted by the thin film light emitting diode.

Claim 7

An amorphous semiconductor thin film light emitting diode comprising: a metal substrate; a plurality of thin amorphous semiconductor layers positioned on said metal substrate and capable of emitting light in response to an electric stimuli; an electrode layer positioned on the plurality of amorphous semiconductor layers; the metal substrate, plurality of thin amorphous semiconductor layers and electrode layer being in a sandwich type arrangement, the metal substrate supporting the semiconductor layers and the electrode layer.

Claim 8

An amorphous semiconductor thin film light emitting diode comprising: a metal substrate; a plurality of thin amorphous semiconductor layers positioned on said metal substrate and capable of emitting light in response to an electric stimuli; an electrode layer positioned on the plurality of amorphous semiconductor layers; the metal substrate, plurality of thin amorphous semiconductor layers and electrode layer being in a sandwich type arrangement, the metal substrate supporting the semiconductor layers and the electrode layer.

Claim 9

An amorphous semiconductor thin film light emitting diode as in claim 6 wherein the metal substrate is in form of a sheet having good electrical and thermal conductivities and adapted to be a lustrous, substantially smooth surface and of light weight.

Claim 10

An amorphous semiconductor thin film light emitting diode as in claim 7 wherein the metal substrate comprises a material having at least one element of the group including but not limited to stainless steel, copper, aluminum, bronze, zinc, nickel, the choice of material determined by the properties desired these including longevity, ruggedness, low cost and good reflectivity.

Claim 11

An amorphous semiconductor thin film light emitting diode as in claim 6 wherein the plurality of thin amorphous semiconductor layers have p-i-n junction configuration.

Claim 12

An amorphous semiconductor thin film light emitting diode as in claim 6 wherein the plurality of thin amorphous semiconductor layers have n-i-p junction configurations.

Claim 13

An amorphous semiconductor thin film light emitting diode as in claim 6 wherein the electrode is a layer of material substantially optically transparent to electro-magnetic radiation emitted by the thin film light emitting diode.

Claim 14

An amorphous semiconductor thin film light emitting diode as in claim 11 wherein the optically transparent and electrically conductive second electrode is selected from but not limited to the group including tin oxide, indium tin oxide, zinc oxide, indium oxide, zirconium oxide.

Claim 15

An amorphous semiconductor thin film light emitting diode as in claim 6 wherein the plurality of thin film amorphous semiconductor layers are fabricated from a material comprising at least one of amorphous silicon, amorphous silicon carbide, amorphous silicon nitride, amorphous silicon oxide.

Claim 16

An amorphous semiconductor thin film light emitting diode adapted to emit a pattern of light comprising: a first electrode metal substrate; at least one insulator film deposited to cover a portion of the surface of the first electrode metal substrate; a plurality of thin film amorphous semiconductor layers deposited onto the first electrode metal substrate which has no overlying insulator film and on top of the at least one insulator film overlying the first electrode metal substrate and adapted to emit light in response to an electric stimuli; a second electrode deposited onto the plurality of thin film amorphous semiconductor layers said second electrode being optically transparent to the light emitted by the diode and being electrically conductive; said first electrode metal substrate supporting the semiconductor layers and the second electrode; and said at least one insulating film being non-electrically conductive so that when the diode is electrically stimulated by an electric current fed into the diode in between the first and second electrodes substantially no current flows through the at least one insulating layer and thus across the amorphous semiconductor layers deposited on top of the at least one insulating layer resulting in only areas of the diode containing no insulating film emitting light, the emitted light therefore having a pattern.

Claim 17

An amorphous semiconductor thin film light emitting diode adapted to emit a pattern of light comprising: a first electrode metal substrate; at least one insulator film deposited to cover a portion of the surface of the first electrode metal substrate; a plurality of thin film amorphous semiconductor layers deposited onto the first electrode metal substrate which has no overlying insulator film and on top of the at least one insulator film overlying the first electrode metal substrate and adapted to emit light in response to an electric stimuli; a second electrode deposited onto the plurality of thin film amorphous semiconductor layers said second electrode being optically transparent to the light emitted by the diode and being electrically conductive; said first electrode metal substrate supporting the semiconductor layers and the second electrode; and said at least one insulating film being non-electrically conductive so that when the diode is electrically stimulated by an electric current fed into the diode in between the first and second electrodes substantially no current flows through the at least one insulating layer and thus across the amorphous semiconductor layers deposited on top of the at least one insulating layer resulting in only areas of the diode containing no insulating film emitting light, the emitted light therefore having a pattern.

Claim 18

An amorphous semiconductor thin film light emitting diode as in claim 14 wherein the first electrode metal substrate is in form of a sheet with good electrical and thermal conductivities, and adapted to have a lustrous, be substantially smooth surface and be of light weight.

Claim 19

An amorphous semiconductor thin film light emitting diode as in claim 14 wherein the plurality of thin film amorphous semiconductor layers have p-i-n junction configuration.

Claim 20

An amorphous semiconductor thin film light emitting diode as in claim 16 wherein the metal substrate comprises a material having at least one element of the group including but not limited to stainless steel, copper, aluminum, bronze, zinc, nickel, the choice of material determined by the properties desired these including longevity, ruggedness, low cost and good reflectivity.

Claim 21

An amorphous semiconductor thin film light emitting diode as in claim 14 wherein the plurality of thin film amorphous semiconductor layers have n-i-p junction configuration.

Claim 22

An amorphous semiconductor thin film light emitting diode as in claim 14 wherein the plurality of thin film amorphous semiconductor layers are fabricated from a material comprising at least one of amorphous silicon, amorphous silicon carbide, amorphous silicon nitride, amorphous silicon oxide.

Claim 23

An amorphous semiconductor thin film light emitting diode as in claim 14 wherein the optically transparent and electrically conductive second electrode is selected from but not limited to the group including tin oxide, indium tin oxide, zinc oxide, indium oxide, zirconium oxide.

Claim 24

An amorphous semiconductor thin film light emitting diode as in claim 14 where the at least one insulator film may be deposited within the plurality of thin film amorphous semiconductor layers.

Claim 25

An amorphous semiconductor thin film light emitting diode as in claim 14 wherein the at least one insulator film is fabricated from the group including but not limited to silicon oxide, yttrerium oxide, lead titanium oxide, silicon nitride.

Claim 26

An amorphous semiconductor thin film light emitting diode adapted to emit a pattern of light comprising: a first electrode metal substrate; a plurality of thin film amorphous semiconductor layers deposited onto the first electrode metal substrate and adapted to emit light in response to an electric stimuli; at least one insulator film deposited to cover a portion of the surface of the plurality of the thin film amorphous semiconductor layers; a second electrode deposited onto the plurality of thin film amorphous semiconductor layers which have no overlying insulator film and on top of the at least one insulator film overlying the thin film amorphous semiconductor layers; said second electrode being a layer of material optically transparent to the light emitted by the diode; said first electrode metal substrate supporting the semiconductor layers and second electrode; said at least one insulating film being non-electrically conductive so that when the diode is electrically stimulated by an electric current fed into the diode in between the first and second electrodes substantially no current flows through the at least one insulating layer and thus across the amorphous semiconductor layers with at least one insulating layer deposited on top resulting in only areas of the diode containing no insulating film emitting light, the emitted light therefore having a pattern.

Claim 27

An amorphous semiconductor thin film light emitting diode adapted to emit a pattern of light comprising: a first electrode metal substrate; a plurality of thin film amorphous semiconductor layers deposited onto the first electrode metal substrate and adapted to emit light in response to an electric stimuli; at least one insulator film deposited to cover a portion of the surface of the plurality of the thin film amorphous semiconductor layers; a second electrode deposited onto the plurality of thin film amorphous semiconductor layers which have no overlying insulator film and on top of the at least one insulator film overlying the thin film amorphous semiconductor layers; said second electrode being a layer of material optically transparent to the light emitted by the diode; said first electrode metal substrate supporting the semiconductor layers and second electrode; said at least one insulating film being non-electrically conductive so that when the diode is electrically stimulated by an electric current fed into the diode in between the first and second electrodes substantially no current flows through the at least one insulating layer and thus across the amorphous semiconductor layers with at least one insulating layer deposited on top resulting in only areas of the diode containing no insulating film emitting light, the emitted light therefore having a pattern.

Claim 28

An amorphous semiconductor thin film light emitting diode as in claim 23 wherein the first electrode metal substrate is in form of a sheet with good electrical and thermal conductivities, and adapted to be a lustrous, substantially smooth surface and light weight.

Claim 29

An amorphous semiconductor thin film light emitting diode as in claim 24 wherein the metal substrate comprises a material having at least one element of the group including but not limited to stainless steel, cooper, aluminum, bronze, zinc, nickel, the choice of material determined by the properties desired these including longevity, ruggedness, low cost and good reflectivity.

Claim 30

An amorphous semiconductor thin film light emitting diode as in claim 23 wherein the plurality of thin film amorphous semiconductor layers have p-i-n junction configuration.

Claim 31

An amorphous semiconductor thin film light emitting diode as in claim 23 wherein the plurality of thin film amorphous semiconductor layers have n-i-p junction configuration.

Claim 32

An amorphous semiconductor thin film light emitting diode as in claim 23 wherein the plurality of thin film amorphous semiconductor layers are fabricated from a material comprising at least one of amorphous silicon, amorphous silicon carbide, amorphous silicon nitride, amorphous silicon oxide.

Claim 33

An amorphous semiconductor thin film light emitting diode as in claim 23 wherein the optically transparent and electrically conductive second electrode is selected from but not limited to the group including tin oxide, indium tin oxide, zinc oxide, indium oxide, zirconium oxide.

Claim 34

An amorphous semiconductor thin film light emitting diode as in claim 23 where the at least one insulator film may be deposited within the plurality of thin film amorphous semiconductor layers.

Claim 35

An amorphous semiconductor thin film light emitting diode as in claim 23 wherein the at least one insulator film is fabricated from the group including but not limited to silicon oxide, yttrerium oxide, lead titanium oxide, silicon nitride.

Claim 36

An amorphous semiconductor thin film light emitting diode comprising: a metal substrate for supporting the thin film light emitting diode and for providing a first electrode to said diode; a plurality of thin amorphous semiconductor layers deposited on said substrate, said amorphous semiconductor layers comprising a diode capable of emitting light in response to electric stimuli; an optically transparent, electrically conducting second electrode; the plurality of thin amorphous semiconductor layers being arranged in a sandwich type arrangement between said first and second electrodes, whereby electric stimuli passed between said first and second electrodes causes said amorphous semiconductor layers comprising a diode to emit light which is then transmitted from said diode and through said optically transparent, electrically conducting second electrode.

Claim 37

An amorphous semiconductor thin film light emitting diode comprising: a metal substrate for supporting the thin film light emitting diode and for providing a first electrode to said diode; a plurality of thin amorphous semiconductor layers deposited on said substrate, said amorphous semiconductor layers comprising a diode capable of emitting light in response to electric stimuli; an optically transparent, electrically conducting second electrode; the plurality of thin amorphous semiconductor layers being arranged in a sandwich type arrangement between said first and second electrodes, whereby electric stimuli passed between said first and second electrodes causes said amorphous semiconductor layers comprising a diode to emit light which is then transmitted from said diode and through said optically transparent, electrically conducting second electrode.

Claim 38

An amorphous semiconductor thin film light emitting diode as in claim 32 wherein the first electrode metal substrate further comprises metal having at least one element taken from the group comprising stainless steel, cooper, aluminum, bronze, zinc, nickel, the choice of metal being determined by predetermined metal properties such as longevity, ruggedness, low cost and good reflectivity.

Claim 39

An amorphous semiconductor thin film light emitting diode as in claim 32 wherein said plurality of thin film amorphous semiconductor layers further comprise at least one element taken form the group comprising amorphous silicon, amorphous silicon carbide, amorphous silicon nitride and amorphous silicon oxide.

Claim 40

An amorphous semiconductor thin film light emitting diode as in claim 32, wherein said plurality of thin film amorphous semiconductor layers further comprise at least one film layer that includes portions that are insulating and non-electrically conductive such that when the diode is electrically stimulated by an electric current fed into the diode in between the first and second electrodes, substantially no current flows through the at least one insulating layer and thus across the amorphous semiconductor layers deposited on top of the at least one insulating layer resulting in only areas of the diode containing no insulating film to emit light, thereby the light emitted from the diode having a pattern.