US5652467A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and package structure therefore and power inverter having semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1995-07-27
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Granted: 1997-07-29
•
Expires: 2015-07-27
Abstract
Abstract An auxiliary cathode lead is contacted to a cathode buffer electrode which contacts to an unit GTO arranged at the most remote region from a gate pressure contacting portion of a GTO pellet and the push-into effect of the auxiliary cathode current during the turn-off can be remarkably performed. Without inviting bad affects such as the increase in "on" voltage, it is proposed a package structure of a semiconductor which the unit GTO arranged remote from a gate is easily to perform the turn-off. The maximum turn-off current can be heightened, it can easily correspond to the increase in the diameter of the pellet according to the large current of the unit element. Further, a condenser of a snubber circuit as a protection circuit of the unit GTO in a power inverter can be small, and the snubber loss can be lessened.
Inventors
- 👤 Hidekatsu Onose
- 👤 Shuroku Sakurada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:35
CPC Classifications
H; H10; H10W; H10W72/00
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
137 words
A semiconductor device comprises: a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed; a first electrode plate contacted to said first main electrode of said semiconductor pellet; a second electrode plate contacted to said second main electrode of said semiconductor pellet; a first outside electrode pressed under pressure in contact with said first electrode plate; a second outside electrode pressed under pressure in contact with said second electrode plate; and a control electrode lead contacted to said control electrode of said semiconductor pellet; wherein the semiconductor deice comprises further: an auxiliary electrode lead contacted to said first electrode plate, wherein said first outside electrode is not directly contacted to said auxiliary electrode lead.
Claim 2
Dependent Claim
137 words
A semiconductor device comprises: a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed; a first electrode plate contacted to said first main electrode of said semiconductor pellet; a second electrode plate contacted to said second main electrode of said semiconductor pellet; a first outside electrode pressed under pressure in contact with said first electrode plate; a second outside electrode pressed under pressure in contact with said second electrode plate; and a control electrode lead contacted to said control electrode of said semiconductor pellet; wherein the semiconductor deice comprises further: an auxiliary electrode lead contacted to said first electrode plate, wherein said first outside electrode is not directly contacted to said auxiliary electrode lead.
Claim 3
Dependent Claim
182 words
A semiconductor device comprises: a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed; a first electrode plate contacted to said first main electrode of said semiconductor pellet; a second electrode plate contacted to said second main electrode of said semiconductor pellet; a first outside electrode pressed under pressure in contact with said first electrode plate; a second outside electrode pressed under pressure in contact with said second electrode plate; and a control electrode lead contacted to said control electrode of said semiconductor pellet; wherein the semiconductor device comprises further: an auxiliary electrode lead contacted to said first electrode plate, wherein said first outside electrode is not directly contacted to said auxiliary electrode lead; and a contact portion between said first electrode plate and said auxiliary electrode lead being adjacent to said first electrode plate at a region which is most remote from a contact portion between said control electrode lead and said control electrode of said semiconductor pellet.
Claim 4
Dependent Claim
182 words
A semiconductor device comprises: a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed; a first electrode plate contacted to said first main electrode of said semiconductor pellet; a second electrode plate contacted to said second main electrode of said semiconductor pellet; a first outside electrode pressed under pressure in contact with said first electrode plate; a second outside electrode pressed under pressure in contact with said second electrode plate; and a control electrode lead contacted to said control electrode of said semiconductor pellet; wherein the semiconductor device comprises further: an auxiliary electrode lead contacted to said first electrode plate, wherein said first outside electrode is not directly contacted to said auxiliary electrode lead; and a contact portion between said first electrode plate and said auxiliary electrode lead being adjacent to said first electrode plate at a region which is most remote from a contact portion between said control electrode lead and said control electrode of said semiconductor pellet.
Claim 5
Dependent Claim
29 words
A semiconductor device according to claim 1 or claim 2, wherein each of said control electrode lead and said auxiliary electrode lead is respectively connected to a control circuit.
Claim 6
Dependent Claim
63 words
A semiconductor device according to any one of from claim 1 or claim 2, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion of said semiconductor pellet; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a peripheral portion of said semiconductor pellet.
Claim 7
Dependent Claim
59 words
A semiconductor device according to claim 1 or claim 2, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a peripheral portion of said semiconductor pellet; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a central portion of said semiconductor pellet.
Claim 8
Dependent Claim
73 words
A semiconductor device according to claim 1 or claim 2, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a portion between a central portion and a peripheral portion of said semiconductor pellet; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said semiconductor pellet.
Claim 9
Dependent Claim
70 words
A semiconductor device according to claim 1 or claim 2, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion and a peripheral portion of said semiconductor pellet; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said semiconductor pellet.
Claim 10
Dependent Claim
28 words
A semiconductor device according to claim 1 or claim 2, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 11
Dependent Claim
45 words
A semiconductor device according to claim 1 or claim 2, the semiconductor device characterized in that said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 12
Dependent Claim
56 words
A semiconductor device according to claim 3, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion of said semiconductor pellet; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a peripheral portion of said semiconductor pellet.
Claim 13
Dependent Claim
56 words
A semiconductor device according to claim 3, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a peripheral portion of said semiconductor pellet; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a central portion of said semiconductor pellet.
Claim 14
Dependent Claim
70 words
A semiconductor device according to claim 3, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a portion between a central portion and a peripheral portion of said semiconductor pellet; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said semiconductor pellet.
Claim 15
Dependent Claim
67 words
A semiconductor device according to claim 3, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion and a peripheral portion of said semiconductor pellet; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said semiconductor pellet.
Claim 16
Dependent Claim
25 words
A semiconductor device according to claim 3, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 17
Dependent Claim
25 words
A semiconductor device according to claim 4, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 18
Dependent Claim
25 words
A semiconductor device according to claim 5, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 19
Dependent Claim
25 words
A semiconductor device according to claim 6, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 20
Dependent Claim
25 words
A semiconductor device according to claim 7, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 21
Dependent Claim
37 words
A semiconductor device according to claim 3, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 22
Dependent Claim
37 words
A semiconductor device according to claim 4, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 23
Dependent Claim
37 words
A semiconductor device according to claim 5, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 24
Dependent Claim
37 words
A semiconductor device according to claim 6, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 25
Dependent Claim
37 words
A semiconductor device according to claim 7, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 26
Dependent Claim
145 words
A package structure of a semiconductor device comprises: a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed a first electrode plate contacted to said first main electrode of said semiconductor pellet; a second electrode plate contacted to said second main electrode of said semiconductor pellet; a first outside electrode pressed under pressure in contact with said first electrode plate; a second outside electrode pressed under pressure in contact with said second electrode plate; and a common electrode lead contacted to said control electrode of said semiconductor pellet; wherein the package structure of the semiconductor device comprises further: an auxiliary electrode lead contacted to said first electrode plate, wherein said first outside electrode is not directly contacted to said auxiliary electrode lead.
Claim 27
Dependent Claim
145 words
A package structure of a semiconductor device comprises: a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed a first electrode plate contacted to said first main electrode of said semiconductor pellet; a second electrode plate contacted to said second main electrode of said semiconductor pellet; a first outside electrode pressed under pressure in contact with said first electrode plate; a second outside electrode pressed under pressure in contact with said second electrode plate; and a common electrode lead contacted to said control electrode of said semiconductor pellet; wherein the package structure of the semiconductor device comprises further: an auxiliary electrode lead contacted to said first electrode plate, wherein said first outside electrode is not directly contacted to said auxiliary electrode lead.
Claim 28
Dependent Claim
188 words
A package structure of a semiconductor device comprises: a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed; a first electrode plate contacted to said first main electrode of said semiconductor pellet; a second electrode plate contacted to said second main electrode of said semiconductor pellet; a first outside electrode pressed under pressure in contact with said first electrode plate; a second outside electrode pressed under pressure in contact with said second electrode plate; and a control electrode lead contacted to said control electrode of said semiconductor pellet; wherein the package structure of the semiconductor device comprises further: an auxiliary electrode lead contacted to said first electrode plate wherein said first outside electrode is not directly contacted to said auxiliary electrode lead; and wherein a contact portion between said first electrode plate and said auxiliary electrode lead is adjacent to said electrode plate at a region most remote from a contact portion between said control electrode lead and said control electrode of said semiconductor pellet.
Claim 29
Dependent Claim
188 words
A package structure of a semiconductor device comprises: a semiconductor pellet on which a first main electrode, a second main electrode, and a control electrode for controlling current flow between said first main electrode and said second main electrode are formed; a first electrode plate contacted to said first main electrode of said semiconductor pellet; a second electrode plate contacted to said second main electrode of said semiconductor pellet; a first outside electrode pressed under pressure in contact with said first electrode plate; a second outside electrode pressed under pressure in contact with said second electrode plate; and a control electrode lead contacted to said control electrode of said semiconductor pellet; wherein the package structure of the semiconductor device comprises further: an auxiliary electrode lead contacted to said first electrode plate wherein said first outside electrode is not directly contacted to said auxiliary electrode lead; and wherein a contact portion between said first electrode plate and said auxiliary electrode lead is adjacent to said electrode plate at a region most remote from a contact portion between said control electrode lead and said control electrode of said semiconductor pellet.
Claim 30
Dependent Claim
33 words
A package structure of a semiconductor device according to claim 24 or claim 25, wherein each of said control electrode lead and said auxiliary electrode lead is respectively connected to a control circuit.
Claim 31
Dependent Claim
64 words
A package structure of a semiconductor device according to from claim 24 or claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion of said electrode plate; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a peripheral portion of said electrode plate.
Claim 32
Dependent Claim
62 words
A package structure of a semiconductor device according to claim 24 or claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a peripheral portion of said electrode plate; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a central portion of electrode plate.
Claim 33
Dependent Claim
74 words
A package structure of a semiconductor device according to claim 24 or claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a portion between a central portion and a peripheral portion of said electrode plate; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on said central portion and said peripheral portion of said electrode plate.
Claim 34
Dependent Claim
74 words
A package structure of a semiconductor device according to claim 24 or claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion and a peripheral portion of said electrode plate; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said electrode plate.
Claim 35
Dependent Claim
32 words
A package structure of a semiconductor device according to claim 24 or claim 30, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 36
Dependent Claim
45 words
A package structure of a semiconductor device according to claim 24 or claim 30, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and wherein said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 37
Dependent Claim
56 words
A semiconductor device according to claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion of said electrode plate; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a peripheral portion of said electrode plate.
Claim 38
Dependent Claim
56 words
A semiconductor device according to claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a peripheral portion of said electrode plate; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a central portion of said electrode plate.
Claim 39
Dependent Claim
68 words
A semiconductor device according to claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a portion between said a central portion and a peripheral portion of said electrode plate; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on said central portion and said peripheral portion of said electrode plate.
Claim 40
Dependent Claim
67 words
A semiconductor device according to claim 26, wherein a contact portion between said control electrode lead and said control electrode of said semiconductor pellet exists on a central portion and a peripheral portion of said electrode plate; and wherein a contact portion between said electrode plate and said auxiliary electrode lead exists on a portion between said central portion and said peripheral portion of said electrode plate.
Claim 41
Dependent Claim
25 words
A semiconductor device according to claim 26, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 42
Dependent Claim
25 words
A semiconductor device according to claim 27, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 43
Dependent Claim
25 words
A semiconductor device according to claim 28, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 44
Dependent Claim
25 words
A semiconductor device according to claim 29, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 45
Dependent Claim
25 words
A semiconductor device according to claim 30, wherein said electrode plate and said auxiliary electrode lead are pressed under pressure in contact with each other.
Claim 46
Dependent Claim
38 words
A semiconductor device according to claim 26, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and wherein said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 47
Dependent Claim
38 words
A semiconductor device according to claim 27, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and wherein said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 48
Dependent Claim
38 words
A semiconductor device according to claim 28, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and wherein said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 49
Dependent Claim
38 words
A semiconductor device according to claim 29, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and wherein said outside electrode is pressed under pressure in contact with said electrode plate.
Claim 50
Dependent Claim
38 words
A semiconductor device according to claim 30, wherein said auxiliary electrode lead is fixed to said outside electrode through an insulation material member; and wherein said outside electrode is pressed under pressure in contact with said electrode plate.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-07-28 | 2001-01-27 | 2001-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-28 | 2005-01-27 | 2005-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-28 | 2009-01-27 | 2009-07-29 | $7700.00 | Window Closed / Lapsed |