US5648275A
Expired / Lapsed
US
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Method for detecting defects in semiconductor insulators
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1997-07-15
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Expires: 2015-06-07
Abstract
Abstract The reliability of thin film insulators is determined with noise measurements which find the barrier height mean and standard deviation. A constant voltage source is applied across the thin film insulator. A low noise amplifier is connected across a resistor which is in series with the insulator. A spectrum analyzer is connected to the low noise amplifier. The power density is obtained by observing the output of a spectrum analyzer. The current spectral density is compared to a predetermined reference to detect the presence of defects in the insulator.
Inventors
- 👤 Michael C. Smayling
- 👤 Klaus A. Anselm
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:08
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2621; G01R31/50; G01R31/64
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
168 words
A method for designing an integrated circuit, comprising: a. selecting a plurality of possible gate and insulator structures; b. providing at least one semiconductor substrate to be processed; c. processing the substrate, the processing step including the step of forming at least one of each of the possible insulator structures on the substrate; d. evaluating each of the possible insulator structures, the step of evaluating comprising: i. applying a non-destructive voltage across the insulator structure to be evaluated; ii. measuring currents induced by the voltage; iii. determining current spectral density of the measured currents; and iv. detecting the presence of defects in the insulator structure by comparing the current spectral density to a predetermined reference current spectral density for a known defective insulator structure; e. for each insulator structure, comparing the results from the evaluating step with the results from the evaluating step for the other insulator structures; and f. Selecting a preferred one of said plurality of possible gate and insulator structures based on said comparing step.
Claim 2
Independent Claim
168 words
A method for designing an integrated circuit, comprising: a. selecting a plurality of possible gate and insulator structures; b. providing at least one semiconductor substrate to be processed; c. processing the substrate, the processing step including the step of forming at least one of each of the possible insulator structures on the substrate; d. evaluating each of the possible insulator structures, the step of evaluating comprising: i. applying a non-destructive voltage across the insulator structure to be evaluated; ii. measuring currents induced by the voltage; iii. determining current spectral density of the measured currents; and iv. detecting the presence of defects in the insulator structure by comparing the current spectral density to a predetermined reference current spectral density for a known defective insulator structure; e. for each insulator structure, comparing the results from the evaluating step with the results from the evaluating step for the other insulator structures; and f. Selecting a preferred one of said plurality of possible gate and insulator structures based on said comparing step.
Claim 3
Dependent Claim
26 words
the method of claim 1 wherein the step of applying voltage includes applying an electric field in the range of four to twelve megavolts per centimeter.
Claim 4
Dependent Claim
31 words
The method of claim 1 wherein the step of comparing the current spectral density to a predetermined reference includes comparing within a frequency range of from one-tenth hertz to 1.2 megahertz.
Claim 5
Dependent Claim
32 words
The method of claim 1 wherein the step of comparing the current spectral density to a predetermined reference includes comparing within a frequency range of from one-tenth hertz to one hundred hertz.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-14 | 2001-01-13 | 2001-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-14 | 2005-01-13 | 2005-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-14 | 2009-01-13 | 2009-07-15 | $7700.00 | Window Closed / Lapsed |