US5637889A
Expired / Lapsed
US
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Composite power transistor structures using semiconductor materials with different bandgaps
Assignee: STMicroelectronics lnc USA
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Filing: 1995-06-07
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Granted: 1997-06-10
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Expires: 2015-06-07
Abstract
Abstract A power device structure which is formed of two merged device structures: an FET control device is located in a surface layer of narrower-bandgap material, and a blocking device which provides high-voltage-withstand capability is located deeper in the device, in a substrate of wider-bandgap material.
Inventors
- 👤 Robert O. Groover
- 👤 Richard A. Blanchard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:28
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/668; H10D12/00; H10D12/411; H10D12/441; H10D12/461; H10D12/481; H10D30/751; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0158; H10D84/101; H10D84/121; H10D84/141; H10D84/40; H10D84/401; H10D84/403; H10D84/406; H10D84/80; H10D84/82; H10D84/83; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/156; H10D62/157; Y; Y10; Y10S; Y10S148/00; Y10S148/126
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
80 words
A solid-state electronic device structure, comprising: a first transistor portion having current-control portions thereof formed in a first semiconductor material; and a second transistor portion which has current-control portions thereof formed in a second semiconductor material which has a wider bandgap than said first semiconductor material; said first and second transistor portions being connected in series to provide a combined power device structure in which said first transistor portion regulates current while said second transistor portion provides high-voltage withstand capability.
Claim 2
Dependent Claim
80 words
A solid-state electronic device structure, comprising: a first transistor portion having current-control portions thereof formed in a first semiconductor material; and a second transistor portion which has current-control portions thereof formed in a second semiconductor material which has a wider bandgap than said first semiconductor material; said first and second transistor portions being connected in series to provide a combined power device structure in which said first transistor portion regulates current while said second transistor portion provides high-voltage withstand capability.
Claim 3
Dependent Claim
14 words
The composite device structure of claim 1, wherein said first semiconductor material is SiGe.
Claim 4
Dependent Claim
21 words
The composite device structure of claim 1, wherein said first semiconductor material is SiGe, and said second semiconductor material is Si.
Claim 5
Dependent Claim
23 words
The composite device structure of claim 1, wherein said first and second semiconductor materials are both SiGe alloys, and have different Ge fractions.
Claim 6
Dependent Claim
14 words
The composite device structure of claim 1, wherein said second semiconductor material is Si.
Claim 7
Dependent Claim
19 words
The composite device structure of claim 1, wherein said first and second transistor portions form a VDMOS composite device.
Claim 8
Dependent Claim
16 words
The composite device structure of claim 1, wherein said first transistor portion is a trench transistor.
Claim 9
Dependent Claim
19 words
The composite device structure of claim 1, wherein said first and second transistor portions form a switched-emitter composite device.
Claim 10
Dependent Claim
84 words
A solid-state electronic composite device structure, comprising: a first field-effect transistor portion having a channel thereof formed in a first semiconductor material; and a second bipolar transistor portion which has a base portion thereof formed in a second semiconductor material which has a wider bandgap than said first semiconductor material; said first and second transistor portions being connected in series to provide a composite power device structure in which said first transistor portion regulates current while said second transistor portion provides high-voltage withstand capability.
Claim 11
Dependent Claim
84 words
A solid-state electronic composite device structure, comprising: a first field-effect transistor portion having a channel thereof formed in a first semiconductor material; and a second bipolar transistor portion which has a base portion thereof formed in a second semiconductor material which has a wider bandgap than said first semiconductor material; said first and second transistor portions being connected in series to provide a composite power device structure in which said first transistor portion regulates current while said second transistor portion provides high-voltage withstand capability.
Claim 12
Dependent Claim
14 words
The composite device structure of claim 9, wherein said first semiconductor material is SiGe.
Claim 13
Dependent Claim
21 words
The composite device structure of claim 9, wherein said first semiconductor material is SiGe, and said second semiconductor material is Si.
Claim 14
Dependent Claim
23 words
The composite device structure of claim 9, wherein said first and second semiconductor materials are both SiGe alloys, and have different Ge fractions.
Claim 15
Dependent Claim
14 words
The composite device structure of claim 9, wherein said second semiconductor material is Si.
Claim 16
Dependent Claim
19 words
The composite device structure of claim 9, wherein said first and second transistor portions form a VDMOS composite device.
Claim 17
Dependent Claim
16 words
The composite device structure of claim 9, wherein said first transistor portion is a trench transistor.
Claim 18
Dependent Claim
19 words
The composite device structure of claim 9, wherein said first and second transistor portions form a switched-emitter composite device.
Claim 19
Dependent Claim
144 words
A solid-state electronic composite device structure, comprising: a first transistor portion having current-control portions thereof formed in a first semiconductor material, said current-control portions controlling current flow between upper and lower first-conductivity-type diffusions of said first transistor portion; and a second transistor portion which has current-control portions thereof formed in a second semiconductor material which has a wider bandgap than said first semiconductor material; said current control portions of said second transistor portion controlling current flow between upper and lower first-conductivity-type diffusions of said second transistor portion; said lower first-conductivity-type diffusion of said first transistor portion being merged with said upper first-conductivity-type diffusion of said second transistor portion, and said first and second transistor portions being thereby connected in series to provide a composite power device structure in which said first transistor portion regulates current while said second transistor portion provides high-voltage withstand capability.
Claim 20
Dependent Claim
144 words
A solid-state electronic composite device structure, comprising: a first transistor portion having current-control portions thereof formed in a first semiconductor material, said current-control portions controlling current flow between upper and lower first-conductivity-type diffusions of said first transistor portion; and a second transistor portion which has current-control portions thereof formed in a second semiconductor material which has a wider bandgap than said first semiconductor material; said current control portions of said second transistor portion controlling current flow between upper and lower first-conductivity-type diffusions of said second transistor portion; said lower first-conductivity-type diffusion of said first transistor portion being merged with said upper first-conductivity-type diffusion of said second transistor portion, and said first and second transistor portions being thereby connected in series to provide a composite power device structure in which said first transistor portion regulates current while said second transistor portion provides high-voltage withstand capability.
Claim 21
Dependent Claim
14 words
The composite device structure of claim 17, wherein said first semiconductor material is SiGe.
Claim 22
Dependent Claim
21 words
The composite device structure of claim 17, wherein said first semiconductor material is SiGe, and said second semiconductor material is Si.
Claim 23
Dependent Claim
23 words
The composite device structure of claim 17, wherein said first and second semiconductor materials are both SiGe alloys, and have different Ge fractions.
Claim 24
Dependent Claim
14 words
The composite device structure of claim 17, wherein said second semiconductor material is Si.
Claim 25
Dependent Claim
19 words
The composite device structure of claim 17, wherein said first and second transistor portions form a VDMOS composite device.
Claim 26
Dependent Claim
16 words
The composite device structure of claim 17, wherein said first transistor portion is a trench transistor.
Claim 27
Dependent Claim
19 words
The composite device structure of claim 17, wherein said first and second transistor portions form a switched-emitter composite device.
Claim 28
Dependent Claim
110 words
A solid-state electronic composite device structure, comprising: a first transistor portion having current-control portions thereof formed in a first semiconductor material; a second transistor portion which has current-control portions thereof formed in a second semiconductor material which has a wider bandgap than said first semiconductor material; said current control portions of said second transistor portion controlling bipolar current flow in a predominantly vertical direction; said first semiconductor material being epitaxially overlaid on said second semiconductor material; said first and second transistor portions being connected in series to provide a composite power device structure in which said first transistor portion regulates current while said second transistor portion provides high-voltage withstand capability.
Claim 29
Dependent Claim
110 words
A solid-state electronic composite device structure, comprising: a first transistor portion having current-control portions thereof formed in a first semiconductor material; a second transistor portion which has current-control portions thereof formed in a second semiconductor material which has a wider bandgap than said first semiconductor material; said current control portions of said second transistor portion controlling bipolar current flow in a predominantly vertical direction; said first semiconductor material being epitaxially overlaid on said second semiconductor material; said first and second transistor portions being connected in series to provide a composite power device structure in which said first transistor portion regulates current while said second transistor portion provides high-voltage withstand capability.
Claim 30
Dependent Claim
14 words
The composite device structure of claim 25, wherein said first semiconductor material is SiGe.
Claim 31
Dependent Claim
21 words
The composite device structure of claim 25, wherein said first semiconductor material is SiGe, and said second semiconductor material is Si.
Claim 32
Dependent Claim
23 words
The composite device structure of claim 25, wherein said first and second semiconductor materials are both SiGe alloys, and have different Ge fractions.
Claim 33
Dependent Claim
14 words
The composite device structure of claim 25, wherein said second semiconductor material is Si.
Claim 34
Dependent Claim
19 words
The composite device structure of claim 25, wherein said first and second transistor portions form a VDMOS composite device.
Claim 35
Dependent Claim
16 words
The composite device structure of claim 25, wherein said first transistor portion is a trench transistor.
Claim 36
Dependent Claim
19 words
The composite device structure of claim 25, wherein said first and second transistor portions form a switched-emitter composite device.
References Cited (Backward Citations)
US4487639A
Cited
US4868626A
Cited
US4881119A
Cited
US4935799A
Cited
US5065213A
Cited
US5118635A
Cited
US5247200A
Cited
US5380670A
Cited
US5424231A
Cited
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| 3.5 Years (Year 4) | 2000-06-09 | 2000-12-09 | 2001-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-09 | 2004-12-09 | 2005-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-09 | 2008-12-09 | 2009-06-10 | $7700.00 | Window Closed / Lapsed |