Patent JPS5326684A successfully refreshed from Google Patents.
US5637523A
Expired / Lapsed
US
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Method of forming a capacitor and a capacitor construction
Assignee: Micron Technology Inc
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Filing: 1995-11-20
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Granted: 1997-06-10
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Expires: 2015-11-20
Abstract
Abstract A method of forming a capacitor includes, a) providing a series of alternating first and second layers of semiconductive material over a node location, a first of the first and second layers having an average conductivity enhancing dopant concentration of greater than about 5×10 19 ions/cm 3 , a second of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm 3 to about 5×10 19 ions/cm 3 , at least one of the first and second layers being selectively etchable relative to the other of the first and second layers; b) providing a contact opening through the first and second layers of semiconductive material to the node location; c) providing an electrically conductive within the contact opening; d) masking and etching the conductive layer and the series of alternating layers to form a first capacitor plate; e) etching the one of the first and second layers at a faster rate than the other of the first and second layers to define lateral projections of the other of the first and second layers relative to the one of the first and second layers, the electrically conductive layer being in ohmic electrical connection with the first and second layers and lateral projections thereof; the conductive layer, the first and second layers and lateral projections thereof comprising the first capacitor plate; f) providing a capacitor dielectric layer over the conductive layer and the lateral projections; and g) providing a second capacitor plate over the capacitor dielectric layer.
Inventors
- 👤 Pierre C. Fazan
- 👤 Brent Keeth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:34
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D; H10D1/00; H10D1/60; H10D1/68; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
274 words
A method of forming a capacitor comprising the following steps: providing a node location to which electrical connection to a first capacitor plate is to be made; providing a series of alternating first and second layers of semiconductive material over the node location, a first of the first and second layers having an average conductivity enhancing dopant concentration of greater than about 5×10 19 ions/cm 3 , a second of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm 3 to about 5×10 19 ions/cm 3 , at least one of the first and second layers being selectively etchable relative to the other of the first and second layers; providing a contact opening through the first and second layers of semiconductive material to the node location; providing an electrically conductive layer over the series of alternating first and second layers and within the contact opening; masking and etching the conductive layer and the series of alternating layers to form a first capacitor plate; etching the one of the first and second layers at a faster rate than the other of the first and second layers to define lateral projections of the other of the first and second layers relative to the one of the first and second layers, the electrically conductive layer being in ohmic electrical connection with the first and second layers and lateral projections thereof; the conductive layer, the first and second layers and lateral projections thereof comprising the first capacitor plate; providing a capacitor dielectric layer over the conductive layer and the lateral projections; and providing a second capacitor plate over the capacitor dielectric layer.
Claim 2
Independent Claim
274 words
A method of forming a capacitor comprising the following steps: providing a node location to which electrical connection to a first capacitor plate is to be made; providing a series of alternating first and second layers of semiconductive material over the node location, a first of the first and second layers having an average conductivity enhancing dopant concentration of greater than about 5×10 19 ions/cm 3 , a second of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm 3 to about 5×10 19 ions/cm 3 , at least one of the first and second layers being selectively etchable relative to the other of the first and second layers; providing a contact opening through the first and second layers of semiconductive material to the node location; providing an electrically conductive layer over the series of alternating first and second layers and within the contact opening; masking and etching the conductive layer and the series of alternating layers to form a first capacitor plate; etching the one of the first and second layers at a faster rate than the other of the first and second layers to define lateral projections of the other of the first and second layers relative to the one of the first and second layers, the electrically conductive layer being in ohmic electrical connection with the first and second layers and lateral projections thereof; the conductive layer, the first and second layers and lateral projections thereof comprising the first capacitor plate; providing a capacitor dielectric layer over the conductive layer and the lateral projections; and providing a second capacitor plate over the capacitor dielectric layer.
Claim 3
Dependent Claim
21 words
The method of forming a capacitor of claim 1 wherein the first layers are selectively etchable relative to the second layers.
Claim 4
Dependent Claim
29 words
The method of forming a capacitor of claim 1 wherein the electrically conductive layer is provided to less than completely fill the contact opening to define a container construction.
Claim 5
Dependent Claim
35 words
The method of forming a capacitor of claim 1 wherein the step of etching the first and second layers to produce the projections occurs before the step of etching to form the first capacitor plate.
Claim 6
Dependent Claim
37 words
The method of forming a capacitor of claim 1 wherein the etching of the first and second layers to produce the projections and the etching to form the first capacitor plate occur in the same etching step.
Claim 7
Dependent Claim
35 words
The method of forming a capacitor of claim 1 wherein the step of etching the first and second layers to produce the projections occurs after the step of etching to form the first capacitor plate.
Claim 8
Dependent Claim
64 words
The method of forming a capacitor of claim 1 wherein, the electrically conductive layer is provided to less than completely fill the contact opening to define a container construction; and the step of etching the first and second layers to produce the projections is conducted in two distinct steps to form first and second pairs of radially opposed projections which comprise the container construction.
Claim 9
Dependent Claim
21 words
The method of forming a capacitor of claim 1 wherein the first and second layers comprise the same base semiconductive material.
Claim 10
Dependent Claim
31 words
The method of forming a capacitor of claim 1 wherein the conductivity doping of the first of the first and second layers is greater than about 2×10 20 ions/cm 3 .
Claim 11
Independent Claim
296 words
A method of forming a capacitor comprising the following steps: providing a node location to which electrical connection to a first capacitor plate is to be made; providing a series of alternating first and second layers of semiconductive material over the node location, a first of the first and second layers having an average conductivity enhancing dopant concentration of greater than about 5×10 19 ions/cm 3 , a second of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm 3 to about 5×10 19 ions/cm 3 , at least one of the first and second layers being selectively etchable relative to the other of the first and second layers; in a substantially non-selective manner relative to the first and second layers of semiconductive material, etching a contact opening through the first and second layers to the node location; providing an electrically conductive layer over the series of alternating first and second layers and within the contact opening; masking and etching the conductive layer and the series of alternating layers to form a first capacitor plate; after providing the electrically conductive layer, etching the one of the first and second layers at a faster rate than the other of the first and second layers to define outer lateral projections of the other of the first and second layers relative to the one of the first and second layers, the electrically conductive layer being in ohmic electrical connection with the first and second layers and outer lateral projections thereof; the conductive layer, the first and second layers and outer lateral projections thereof comprising the first capacitor plate; providing a capacitor dielectric layer over the conductive layer and the outer lateral projections; and providing a second capacitor plate over the capacitor dielectric layer.
Claim 12
Independent Claim
296 words
A method of forming a capacitor comprising the following steps: providing a node location to which electrical connection to a first capacitor plate is to be made; providing a series of alternating first and second layers of semiconductive material over the node location, a first of the first and second layers having an average conductivity enhancing dopant concentration of greater than about 5×10 19 ions/cm 3 , a second of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm 3 to about 5×10 19 ions/cm 3 , at least one of the first and second layers being selectively etchable relative to the other of the first and second layers; in a substantially non-selective manner relative to the first and second layers of semiconductive material, etching a contact opening through the first and second layers to the node location; providing an electrically conductive layer over the series of alternating first and second layers and within the contact opening; masking and etching the conductive layer and the series of alternating layers to form a first capacitor plate; after providing the electrically conductive layer, etching the one of the first and second layers at a faster rate than the other of the first and second layers to define outer lateral projections of the other of the first and second layers relative to the one of the first and second layers, the electrically conductive layer being in ohmic electrical connection with the first and second layers and outer lateral projections thereof; the conductive layer, the first and second layers and outer lateral projections thereof comprising the first capacitor plate; providing a capacitor dielectric layer over the conductive layer and the outer lateral projections; and providing a second capacitor plate over the capacitor dielectric layer.
Claim 13
Dependent Claim
33 words
The method of forming a capacitor of claim 10 wherein the steps of etching to form the first capacitor plate and etching to define the outer lateral projections comprise the same etching step.
Claim 14
Dependent Claim
32 words
The method of forming a capacitor of claim 10 wherein the steps of etching to form the first capacitor plate and etching to define the outer lateral projections comprise different etching steps.
Claim 15
Dependent Claim
21 words
The method of forming a capacitor of claim 10 wherein the first layers are selectively etchable relative to the second layers.
Claim 16
Dependent Claim
29 words
The method of forming a capacitor of claim 10 wherein the electrically conductive layer is provided to less than completely fill the contact opening to define a container construction.
Claim 17
Dependent Claim
21 words
The method of forming a capacitor of claim 10 wherein the first and second layers comprise the same base semiconductive material.
Claim 18
Independent Claim
271 words
A method of forming a capacitor comprising the following steps: providing a node location to which electrical connection to a first capacitor plate is to be made; providing a series of alternating first and second layers of semiconductive material over the node location, a first of the first and second layers having an average conductivity enhancing dopant concentration of greater than about 5×10 19 ions/cm 3 , a second of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm 3 to about 5×10 19 ions/cm 3 , at least one of the first and second layers being selectively etchable relative to the other of the first and second layers; etching a contact opening through the first and second layers of semiconductive material to the node location; etching the one of the first and second layers at a faster rate than the other of the first and second layers within the contact opening to define inner lateral projections of the other of the first and second layers relative to the one of the first and second layers; after the etching to define the inner lateral projections, providing an electrically conductive layer over the series of alternating first and second layers and within the contact opening over the inner lateral projections to less than completely fill the contact opening and define a container construction; masking and etching the conductive layer and the series of alternating layers to form a first capacitor plate; providing a capacitor dielectric layer over the conductive layer and the inner lateral projections; and providing a second capacitor plate over the capacitor dielectric layer.
Claim 19
Independent Claim
271 words
A method of forming a capacitor comprising the following steps: providing a node location to which electrical connection to a first capacitor plate is to be made; providing a series of alternating first and second layers of semiconductive material over the node location, a first of the first and second layers having an average conductivity enhancing dopant concentration of greater than about 5×10 19 ions/cm 3 , a second of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm 3 to about 5×10 19 ions/cm 3 , at least one of the first and second layers being selectively etchable relative to the other of the first and second layers; etching a contact opening through the first and second layers of semiconductive material to the node location; etching the one of the first and second layers at a faster rate than the other of the first and second layers within the contact opening to define inner lateral projections of the other of the first and second layers relative to the one of the first and second layers; after the etching to define the inner lateral projections, providing an electrically conductive layer over the series of alternating first and second layers and within the contact opening over the inner lateral projections to less than completely fill the contact opening and define a container construction; masking and etching the conductive layer and the series of alternating layers to form a first capacitor plate; providing a capacitor dielectric layer over the conductive layer and the inner lateral projections; and providing a second capacitor plate over the capacitor dielectric layer.
Claim 20
Dependent Claim
30 words
The method of forming a capacitor of claim 16 wherein the steps of etching the contact opening and etching to define the inner lateral projections comprise the same etching step.
Claim 21
Dependent Claim
29 words
The method of forming a capacitor of claim 16 wherein the steps of etching the contact opening and etching to define the inner lateral projections comprise different etching steps.
Claim 22
Dependent Claim
21 words
The method of forming a capacitor of claim 16 wherein the first layers are selectively etchable relative to the second layers.
Claim 23
Dependent Claim
21 words
The method of forming a capacitor of claim 16 wherein the first and second layers comprise the same base semiconductive material.
Claim 24
Independent Claim
321 words
A method of forming a capacitor comprising the following steps: providing a node location to which electrical connection to a first capacitor plate is to be made; providing a series of alternating first and second layers of semiconductive material over the node location, a first of the first and second layers having an average conductivity enhancing dopant concentration of greater than about 5×10 19 ions/cm 3 , a second of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm 3 to about 5×10 19 ions/cm 3 , at least one of the first and second layers being selectively etchable relative to the other of the first and second layers; etching a contact opening through the first and second layers to the node location; etching the one of the first and second layers at a faster rate than the other of the first and second layers within the contact opening to define inner lateral projections of the other of the first and second layers relative to the one of the first and second layers; after the etching to define the inner lateral projections, providing an electrically conductive layer over the series of alternating first and second layers and within the contact opening over the inner lateral projections to less than completely fill the contact opening and define a container construction; masking and etching the conductive layer and the series of alternating layers to form a first capacitor plate; after providing the conductive layer, etching the one of the first and second layers at a faster rate than the other of the first and second layers to define outer lateral projections of the other of the first and second layers relative to the one of the first and second layers; providing a capacitor dielectric layer over the conductive layer and the inner and outer lateral projections; and providing a second capacitor plate over the capacitor dielectric layer.
Claim 25
Independent Claim
321 words
A method of forming a capacitor comprising the following steps: providing a node location to which electrical connection to a first capacitor plate is to be made; providing a series of alternating first and second layers of semiconductive material over the node location, a first of the first and second layers having an average conductivity enhancing dopant concentration of greater than about 5×10 19 ions/cm 3 , a second of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm 3 to about 5×10 19 ions/cm 3 , at least one of the first and second layers being selectively etchable relative to the other of the first and second layers; etching a contact opening through the first and second layers to the node location; etching the one of the first and second layers at a faster rate than the other of the first and second layers within the contact opening to define inner lateral projections of the other of the first and second layers relative to the one of the first and second layers; after the etching to define the inner lateral projections, providing an electrically conductive layer over the series of alternating first and second layers and within the contact opening over the inner lateral projections to less than completely fill the contact opening and define a container construction; masking and etching the conductive layer and the series of alternating layers to form a first capacitor plate; after providing the conductive layer, etching the one of the first and second layers at a faster rate than the other of the first and second layers to define outer lateral projections of the other of the first and second layers relative to the one of the first and second layers; providing a capacitor dielectric layer over the conductive layer and the inner and outer lateral projections; and providing a second capacitor plate over the capacitor dielectric layer.
Claim 26
Dependent Claim
30 words
The method of forming a capacitor of claim 21 wherein the steps of etching the contact opening and etching to define the inner lateral projections comprise the same etching step.
Claim 27
Dependent Claim
29 words
The method of forming a capacitor of claim 21 wherein the steps of etching the contact opening and etching to define the inner lateral projections comprise different etching steps.
Claim 28
Dependent Claim
33 words
The method of forming a capacitor of claim 21 wherein the steps of etching to form the first capacitor plate and etching to define the outer lateral projections comprise the same etching step.
Claim 29
Dependent Claim
32 words
The method of forming a capacitor of claim 21 wherein the steps of etching to form the first capacitor plate and etching to define the outer lateral projections comprise different etching steps.
Claim 30
Dependent Claim
54 words
The method of forming a capacitor of claim 21 wherein, the steps of etching the contact opening and etching to define the inner lateral projections comprise the same etching step; and the steps of etching to form the first capacitor plate and etching to define the outer lateral projections comprise the same etching step.
Claim 31
Dependent Claim
53 words
The method of forming a capacitor of claim 21 wherein, the steps of etching the contact opening and etching to define the inner lateral projections comprise the same etching step; and the steps of etching to form the first capacitor plate and etching to define the outer lateral projections comprise different etching steps.
Claim 32
Dependent Claim
53 words
The method of forming a capacitor of claim 21 wherein, the steps of etching the contact opening and etching to define the inner lateral projections comprise different etching steps; and the steps of etching to form the first capacitor plate and etching to define the outer lateral projections comprise the same etching step.
Claim 33
Dependent Claim
52 words
The method of forming a capacitor of claim 21 wherein, the steps of etching the contact opening and etching to define the inner lateral projections comprise different etching steps; and the steps of etching to form the first capacitor plate and etching to define the outer lateral projections comprise different etching steps.
Claim 34
Dependent Claim
21 words
The method of forming a capacitor of claim 21 wherein the first layers are selectively etchable relative to the second layers.
Claim 35
Dependent Claim
21 words
The method of forming a capacitor of claim 21 wherein the first and second layers comprise the same base semiconductive material.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2004-06-09 | 2004-12-09 | 2005-06-10 | $3760.00 | Window Closed / Lapsed |
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