Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
165 words
A method of forming a layer of material on a wafer in a deposition reactor, the wafer having a face and a peripheral region at an edge of said face, the method comprising the following steps: positioning the wafer within said deposition reactor; engaging the wafer with a clamp to hold said wafer at a defined location within the deposition reactor; and depositing said layer of material on the wafer in the deposition reactor, wherein the clamp includes (a) a clamp body having an inner facing portion and an outer facing portion, and (b) an overhang member attached to and extending inwardly from the inner facing portion of the clamp body such that when the clamp holds said wafer, the overhang member extends over said wafer's peripheral region and is separated from said peripheral region by at least a separation distance, wherein said separation distance being chosen to ensure that the layer of material deposited does not contact both the wafer face and the clamp.
Claim 2
Independent Claim
165 words
A method of forming a layer of material on a wafer in a deposition reactor, the wafer having a face and a peripheral region at an edge of said face, the method comprising the following steps: positioning the wafer within said deposition reactor; engaging the wafer with a clamp to hold said wafer at a defined location within the deposition reactor; and depositing said layer of material on the wafer in the deposition reactor, wherein the clamp includes (a) a clamp body having an inner facing portion and an outer facing portion, and (b) an overhang member attached to and extending inwardly from the inner facing portion of the clamp body such that when the clamp holds said wafer, the overhang member extends over said wafer's peripheral region and is separated from said peripheral region by at least a separation distance, wherein said separation distance being chosen to ensure that the layer of material deposited does not contact both the wafer face and the clamp.
Claim 3
Dependent Claim
29 words
The method of claim 1 further comprising a step of deengaging the wafer after said step of depositing, said step of deengaging producing no flakes of the deposited material.
Claim 4
Dependent Claim
42 words
The method of claim 2 further comprising one or more of the following steps for converting the wafer to one or more integrated circuits: forming a metallization layer; patterning the metallization layer; depositing dielectric layer; etching said dielectric layer; forming an interconnect.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein the step of engaging provides a force to the face of the wafer such that the wafer is held in compression against a susceptor.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein the step of depositing said layer deposits tungsten on said wafer.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein in the step of engaging the wafer, the clamp contacts the wafer along the edge of its face.
Claim 8
Dependent Claim
32 words
The method of claim 1 wherein while said clamp engages the wafer, the overhang member is separated from said peripheral region by at least about 50 times the layer of material's thickness.
Claim 9
Dependent Claim
21 words
The method of claim 7 wherein said overhang member is separated from said peripheral region by at least about 1 mm.
Claim 10
Dependent Claim
31 words
The method of claim 1 wherein while said clamp engages the wafer, the overhang member extends over the wafer's peripheral region by a distance of between about 1 and 10 mm.
Claim 11
Dependent Claim
25 words
The method of claim 9 wherein the overhang member extends over the wafer's peripheral region by a distance of between about 3 and 5 mm.
Claim 12
Dependent Claim
47 words
The method of claim 9 wherein, while said clamp engages the wafer, the ratio of (a) the separation distance separating the overhang member from the wafer's peripheral region to (b) the distance that the overhang member extends over the wafer's peripheral region is no more than 1:5.