Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
180 words
A lateral field effect transistor comprising: a semiconductor substrate; a source region comprising source region stripes formed on said semiconductor substrate; a drain region comprising drain region stripes formed on said semiconductor substrate and spaced laterally from said source region stripes; a source electrode comprising a first source electrode layer connected to said source region via at least one source contact and a second source electrode layer straddling said source region stripes and said drain region stripes, said first source electrode layer and said second source electrode layer being separated by an inter-layer insulation film and connected via at least one source connection hole formed through said inter-layer insulation film; and a drain electrode comprising a first drain electrode layer connected to said drain region via at least one drain contact and a second drain electrode layer straddling said source region stripes and said drain region stripes, said first drain electrode layer and said second drain electrode layer being separated by an inter-layer insulation film and connected via at least one drain connection hole formed through said inter-layer insulation film.
Claim 2
Dependent Claim
180 words
A lateral field effect transistor comprising: a semiconductor substrate; a source region comprising source region stripes formed on said semiconductor substrate; a drain region comprising drain region stripes formed on said semiconductor substrate and spaced laterally from said source region stripes; a source electrode comprising a first source electrode layer connected to said source region via at least one source contact and a second source electrode layer straddling said source region stripes and said drain region stripes, said first source electrode layer and said second source electrode layer being separated by an inter-layer insulation film and connected via at least one source connection hole formed through said inter-layer insulation film; and a drain electrode comprising a first drain electrode layer connected to said drain region via at least one drain contact and a second drain electrode layer straddling said source region stripes and said drain region stripes, said first drain electrode layer and said second drain electrode layer being separated by an inter-layer insulation film and connected via at least one drain connection hole formed through said inter-layer insulation film.
Claim 3
Dependent Claim
19 words
The lateral field transistor of claim 1, further comprising a source pad disposed on said second source electrode layer.
Claim 4
Dependent Claim
19 words
The lateral field transistor of claim 1, further comprising a drain pad disposed on said second drain electrode layer.
Claim 5
Dependent Claim
40 words
The lateral field effect transistor of claim 1, wherein said at least one source connection hole is formed beneath said second source electrode layer, and said at least one drain connection hole is formed beneath said second drain electrode layer.
Claim 6
Dependent Claim
38 words
The lateral field effect transistor of claim 4, wherein said at least one source connection hole is disposed above said source region stripes, and said at least one drain connection hole is disposed above said drain region stripes.
Claim 7
Dependent Claim
50 words
The lateral field effect transistor of claim 5, wherein said at least one source contact and said at least one source connection hole are displaced laterally from one another, and said at least one drain contact and said at least one drain connection hole are displaced laterally from one another.
Claim 8
Dependent Claim
48 words
The lateral field effect transistor of claim 1, wherein: beneath said second drain electrode layer, said first source electrode layer is wider than said first drain electrode layer, and beneath said second source electrode layer, said first drain electrode layer is wider than said first source electrode layer.