US5633190A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for making the same
Assignee: NEC Corp
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Filing: 1996-09-11
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Granted: 1997-05-27
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Expires: 2016-09-11
Abstract
Abstract Disclosed is a semiconductor device in which dummy regions which are lower than an isolated element region are formed around the isolated element region. Another dummy region which has a height nearly equal to those of element regions may be formed at a non-element-region-existing region, accompanying with lower dummy regions. The method for making the semiconductor device has the steps of suitably forming the element regions and dummy regions on a insulating layer on a substrate, depositing a insulator on the entire surface of the insulating layer and polishing the insulator to obtain a plane surface.
Inventors
- 👤 Mitsuhiro Sugiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:56
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/041; H10D86/00; H10D86/01; H10D86/201
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
77 words
A method for making a semiconductor device, comprising the steps of: forming a plurality of island semiconductor regions and a dummy semiconductor region which is lower than said island semiconductor regions by partially removing a semiconductor layer on a insulating layer; depositing an insulator on the entire surface of said insulator layer to cover said island semiconductor region and said dummy semiconductor region; and polishing said insulator near to the top surfaces of said island semiconductor regions.
Claim 2
Independent Claim
77 words
A method for making a semiconductor device, comprising the steps of: forming a plurality of island semiconductor regions and a dummy semiconductor region which is lower than said island semiconductor regions by partially removing a semiconductor layer on a insulating layer; depositing an insulator on the entire surface of said insulator layer to cover said island semiconductor region and said dummy semiconductor region; and polishing said insulator near to the top surfaces of said island semiconductor regions.
Claim 3
Independent Claim
105 words
A method for making a semiconductor device, comprising the steps of: forming a plurality of island semiconductor regions, a first dummy semiconductor region which has a height nearly equal to said island semiconductor regions and a second dummy semiconductor region which is lower than said first dummy semiconductor region by partially removing a semiconductor layer on a insulating layer; depositing an insulator on the entire surface of said insulator layer including said island semiconductor regions, said first and second dummy semiconductor regions to a height higher than said island semiconductor regions; and polishing said insulator near to the top surfaces of said island semiconductor regions.
Claim 4
Independent Claim
105 words
A method for making a semiconductor device, comprising the steps of: forming a plurality of island semiconductor regions, a first dummy semiconductor region which has a height nearly equal to said island semiconductor regions and a second dummy semiconductor region which is lower than said first dummy semiconductor region by partially removing a semiconductor layer on a insulating layer; depositing an insulator on the entire surface of said insulator layer including said island semiconductor regions, said first and second dummy semiconductor regions to a height higher than said island semiconductor regions; and polishing said insulator near to the top surfaces of said island semiconductor regions.
Claim 5
Independent Claim
94 words
A method for making a semiconductor device, comprising the steps of: forming a plurality of island semiconductor regions by partially removing a semiconductor layer on a insulating layer, wherein at least one of said island semiconductor regions is provided with a trench; depositing an insulator on the entire surface of said insulating layer including said island semiconductor regions to a height higher than said island semiconductor regions; and polishing said insulator near to the top surfaces of said island semiconductor regions; wherein said insulator is filled between island semiconductor regions and into said trench.
Claim 6
Independent Claim
94 words
A method for making a semiconductor device, comprising the steps of: forming a plurality of island semiconductor regions by partially removing a semiconductor layer on a insulating layer, wherein at least one of said island semiconductor regions is provided with a trench; depositing an insulator on the entire surface of said insulating layer including said island semiconductor regions to a height higher than said island semiconductor regions; and polishing said insulator near to the top surfaces of said island semiconductor regions; wherein said insulator is filled between island semiconductor regions and into said trench.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-05-26 | 2000-11-25 | 2001-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-05-26 | 2004-11-25 | 2005-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-05-26 | 2008-11-25 | 2009-05-27 | $7700.00 | Window Closed / Lapsed |