US5629943A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit memory with double bitline low special test mode control from output enable
Assignee: STMicroelectronics lnc USA
•
Filing: 1994-05-31
•
Granted: 1997-05-13
•
Expires: 2014-05-31
Abstract
Abstract Circuitry for performing a special test of an integrated memory circuit is disclosed, where the special test requires driving of both bitlines associated with a column of memory cells to a selected logic level, such as ground. The special test is performed in a mode different from normal operation of the memory, and is useful in performing a write disturb test, and in performing stress tests of memory elements such as pass transistors in static random access memory cells. The special test is performed by generating an internal signal selecting the placement of both bitlines in one or more bitline pairs to the selected logic level. Circuitry is also disclosed which uses the output enable terminal, in the special test mode, for controlling the driving of both bitlines to the selected logic level, as the output enable terminal otherwise has no required function in this special test mode.
Inventors
- 👤 David C. McClure
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 23:44
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/02; G11C29/025; G11C29/04; G11C29/50; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
282 words
An integrated memory circuit having a normal operating mode and a special test mode, comprising: a plurality of memory cells, arranged in rows and columns, each column of memory cells associated with a pair of bitlines; means for selecting one of said plurality of memory cells responsive to an address value received at address terminals; output circuitry for presenting the contents of the selected one of said plurality of memory cells at an output terminal during a read operation in the normal operating mode; first and second write drivers, coupled to the pair of bitlines of the column containing the selected one of said plurality of memory cells, for presenting a differential signal on the pair of bitlines corresponding to input data received at an input terminal during a write operation in the normal operating mode; output enable circuitry, coupled to an output enable terminal and to said output circuitry, for selectively enabling and disabling said output circuitry in the normal operating mode responsive to an output enable signal received at the output enable terminal; test mode enable circuitry, for causing the memory to enter the special test mode, said test mode enable circuitry presenting a test mode enable signal at an output thereof; and bitline test control circuitry, coupled to said test mode enable circuitry, to the output enable terminal and to the first and second write drivers, for controlling the write drivers to drive both bitlines in a pair of bitlines associated with a column of memory cells to a selected logic level responsive to the bitline test control circuitry receiving the test mode enable signal and to said output enable terminal receiving a signal at a first logic level.
Claim 2
Dependent Claim
282 words
An integrated memory circuit having a normal operating mode and a special test mode, comprising: a plurality of memory cells, arranged in rows and columns, each column of memory cells associated with a pair of bitlines; means for selecting one of said plurality of memory cells responsive to an address value received at address terminals; output circuitry for presenting the contents of the selected one of said plurality of memory cells at an output terminal during a read operation in the normal operating mode; first and second write drivers, coupled to the pair of bitlines of the column containing the selected one of said plurality of memory cells, for presenting a differential signal on the pair of bitlines corresponding to input data received at an input terminal during a write operation in the normal operating mode; output enable circuitry, coupled to an output enable terminal and to said output circuitry, for selectively enabling and disabling said output circuitry in the normal operating mode responsive to an output enable signal received at the output enable terminal; test mode enable circuitry, for causing the memory to enter the special test mode, said test mode enable circuitry presenting a test mode enable signal at an output thereof; and bitline test control circuitry, coupled to said test mode enable circuitry, to the output enable terminal and to the first and second write drivers, for controlling the write drivers to drive both bitlines in a pair of bitlines associated with a column of memory cells to a selected logic level responsive to the bitline test control circuitry receiving the test mode enable signal and to said output enable terminal receiving a signal at a first logic level.
Claim 3
Dependent Claim
13 words
The circuit of claim 1, wherein the selected logic level corresponds to ground.
Claim 4
Dependent Claim
151 words
The circuit of claim 1, wherein said bitline test control circuitry comprises: control circuitry, having a first input coupled to the output enable terminal, having a second input coupled to the output of said test mode enable circuitry, and having an output for presenting a bitline test control signal responsive to receiving the test mode enable signal and the first logic level at the output enable terminal; and a data input buffer having a first input coupled to the input terminal, having a second input coupled to the output of said control circuitry, and having outputs coupled to inputs of said first and second write drivers, for presenting a differential signal at its outputs responsive to a logic level received at the input terminal in the absence of the bitline test control signal, and for presenting a common voltage signal at its outputs responsive to receiving the bitline test control signal.
Claim 5
Dependent Claim
77 words
The circuit of claim 3, wherein the control circuitry further comprises: output enable control circuitry, having a first input coupled to the output enable terminal, having a second input coupled to a read/write select terminal, and having an output coupled to the output circuitry, for enabling said output circuitry responsive to the output enable terminal receiving the output enable signal in combination with the read/write select terminal receiving a read select signal, in the normal operating mode.
Claim 6
Dependent Claim
38 words
The circuit of claim 3, wherein the data input buffer presents the common voltage signal at its outputs responsive to receiving the bitline test control signal in combination with receiving a first logic level at the input terminal.
Claim 7
Dependent Claim
25 words
The circuit of claim 1, further comprising: bitline loads connected to each bitline of the pair of bitlines associated with each column of memory cells.
Claim 8
Dependent Claim
65 words
The circuit of claim 1, wherein each bitline load comprises a transistor having a conduction path connected between one of the bitlines and a power supply voltage, and having a control terminal; and further comprising: a bus line coupled to the control terminal of each of the bitline load transistors, for causing the bitline load transistors to be turned off in the special test mode.
Claim 9
Dependent Claim
98 words
The circuit of claim 1, wherein each of said memory cells comprises: first and second cell transistors, each having a conduction path and connected to one another in cross-coupled fashion; first and second loads, coupled to the conduction path of the first and second cell transistors, respectively, at first and second cell nodes, respectively; and first and second pass transistors, each having a conduction path coupled between one of the bitlines in the associated pair and the first and second cell nodes, respectively, and each having a control terminal coupled to a wordline output from said selecting means.
Claim 10
Dependent Claim
83 words
The circuit of claim 1, further comprising: a plurality of pairs of first and second pass transistors, each first pass transistor having a conduction path coupled between a first bitline associated with a column and said first write driver, each second pass transistor having a conduction path coupled between a second bitline associated with the column and said second write driver, each first and second pass transistor having a control terminal connected in common with one another for receiving a column select signal.
Claim 11
Dependent Claim
17 words
The circuit of claim 1, wherein the input terminal and the output terminal are the same terminal.
Claim 12
Dependent Claim
19 words
The circuit of claim 1, wherein the plurality of memory cells are arranged into a plurality of array blocks.
Claim 13
Independent Claim
173 words
A method of performing a special test operation on an integrated memory circuit, comprising: writing a known data pattern into a plurality of memory cells in the integrated memory circuit; entering a special test mode; selecting a column of the plurality of memory cells in the circuit, the column of memory cells being associated with first and second differential bitlines, and each memory cell in the selected column having first and second pass transistors having conduction paths connected between first and second memory cell nodes and first and second bitlines, respectively, and having a control terminal controlled by a wordline; for the selected column and after said step of entering the special test mode, driving both of said first and second bitlines to a selected voltage for a selected time responsive to receiving an input signal at a circuit terminal, wherein in a normal operating mode the circuit terminal selectively enables and disables output circuitry of the memory circuit; and after said driving step, reading the contents of the plurality of memory cells.
Claim 14
Independent Claim
173 words
A method of performing a special test operation on an integrated memory circuit, comprising: writing a known data pattern into a plurality of memory cells in the integrated memory circuit; entering a special test mode; selecting a column of the plurality of memory cells in the circuit, the column of memory cells being associated with first and second differential bitlines, and each memory cell in the selected column having first and second pass transistors having conduction paths connected between first and second memory cell nodes and first and second bitlines, respectively, and having a control terminal controlled by a wordline; for the selected column and after said step of entering the special test mode, driving both of said first and second bitlines to a selected voltage for a selected time responsive to receiving an input signal at a circuit terminal, wherein in a normal operating mode the circuit terminal selectively enables and disables output circuitry of the memory circuit; and after said driving step, reading the contents of the plurality of memory cells.
Claim 15
Dependent Claim
25 words
The method of claim 12, wherein the circuit terminal is an output enable terminal, for selectively enabling and disabling output circuitry of the memory circuit.
Claim 16
Dependent Claim
34 words
The method of claim 12, further comprising: after said writing step, driving the wordline with a signal to turn off the first and second pass transistors of a memory cell in the selected column.
Claim 17
Dependent Claim
34 words
The method of claim 12, further comprising: during said step of driving both of said first and second bitlines to a selected voltage, placing a stress voltage onto a wordline for a selected time.
Claim 18
Dependent Claim
56 words
The method of claim 12, wherein said step of driving both of said first and second bitlines to a selected voltage for a selected time comprises: performing a logical combination of a signal presented to an output enable terminal of the memory circuit with a signal presented to an input data terminal of the memory circuit.
Claim 19
Dependent Claim
11 words
The method of claim 12, wherein the selected voltage is ground.
Claim 20
Dependent Claim
248 words
An integrated memory circuit having a normal operating mode and a special test mode, comprising: a plurality of memory cells, arranged in rows and columns, each column of memory cells associated with a pair of bitlines; means for selecting one of said plurality of memory cells responsive to an address value received at address terminals; output circuitry for presenting the contents of the selected one of said plurality of memory cells at an output terminal during a read operation in the normal operating mode; first and second write drivers, coupled to the pair of bitlines of the column containing the selected one of said plurality of memory cells, for presenting a differential signal on the pair of bitlines corresponding to input data received at an input terminal during a write operation in the normal operating mode; a function terminal having a specified function in normal operating mode; test mode enable circuitry, for causing the memory to enter the special test mode, said test mode enable circuitry presenting a test mode enable signal at an output thereof; and bitline test control circuitry, coupled to said test mode enable circuitry, to the function terminal and to the first and second write drivers, for controlling the write drivers to drive both of the bitlines of a column of memory cells to a selected logic level responsive to the bitline test control circuitry receiving the test mode enable signal and to said function terminal receiving a signal at a first logic level.
Claim 21
Dependent Claim
248 words
An integrated memory circuit having a normal operating mode and a special test mode, comprising: a plurality of memory cells, arranged in rows and columns, each column of memory cells associated with a pair of bitlines; means for selecting one of said plurality of memory cells responsive to an address value received at address terminals; output circuitry for presenting the contents of the selected one of said plurality of memory cells at an output terminal during a read operation in the normal operating mode; first and second write drivers, coupled to the pair of bitlines of the column containing the selected one of said plurality of memory cells, for presenting a differential signal on the pair of bitlines corresponding to input data received at an input terminal during a write operation in the normal operating mode; a function terminal having a specified function in normal operating mode; test mode enable circuitry, for causing the memory to enter the special test mode, said test mode enable circuitry presenting a test mode enable signal at an output thereof; and bitline test control circuitry, coupled to said test mode enable circuitry, to the function terminal and to the first and second write drivers, for controlling the write drivers to drive both of the bitlines of a column of memory cells to a selected logic level responsive to the bitline test control circuitry receiving the test mode enable signal and to said function terminal receiving a signal at a first logic level.
Claim 22
Dependent Claim
56 words
The circuit of claim 18, further comprising: output enable circuitry, coupled to an output enable terminal and to said output circuitry, for selectively enabling and disabling said output circuitry in the normal operating mode responsive to an output enable signal received at the output enable terminal; and wherein said function terminal is the output enable terminal.
Claim 23
Dependent Claim
149 words
The circuit of claim 18, wherein said bitline test control circuitry comprises: control circuitry, having a first input coupled to the function terminal, having a second input coupled to the output of said test mode enable circuitry, and having an output for presenting a bitline test control signal responsive to receiving the test mode enable signal and the first logic level at the function terminal; and a data input buffer having a first input coupled to the input terminal, having a second input coupled to the output of said control circuitry, and having outputs coupled to inputs of said first and second write drivers, for presenting a differential signal at its outputs responsive to a logic level received at the input terminal in the absence of the bitline test control signal, and for presenting a common voltage signal at its outputs responsive to receiving the bitline test control signal.
Claim 24
Dependent Claim
38 words
The circuit of claim 20, wherein the data input buffer presents the common voltage signal at its outputs responsive to receiving the bitline test control signal in combination with receiving a first logic level at the input terminal.
Claim 25
Dependent Claim
13 words
The circuit of claim 18, wherein the selected logic level corresponds to ground.
References Cited (Backward Citations)
US4460978A
Cited
US5051948A
Cited
US5072137A
Cited
US5072138A
Cited
US5134587A
Cited
US5134586A
Cited
US5289475A
Cited
US5255230A
Cited
US5347843A
Cited
US5329175A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-05-12 | 2000-11-11 | 2001-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-05-12 | 2004-11-11 | 2005-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-05-12 | 2008-11-11 | 2009-05-13 | $7700.00 | Window Closed / Lapsed |