US5629244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication method of semiconductor accelerometer
Assignee: NEC Corp
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Filing: 1995-04-27
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Granted: 1997-05-13
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Expires: 2015-04-27
Abstract
Abstract Using a p-type silicon substrate 1 having on its front surface an n-type silicon layer 2 with a thickness of twice or more of the desired thickness for the beam, an electrochemical etching is performed from the rear surface and the etching is stopped at the beam thickness which is twice or more of the desired thickness. Etching for the beam part 8 from the rear surface proceeds along with the etching for the gap part 9 from the front surface, and a desired thickness for the beam can be formed by completing the etching at the timing when the gap part is opened through.
Inventors
- 👤 Tadahiro Matsuzaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:19
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00134; B81C1/00142; G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/0802; B81B; B81B2201/00; B81B2201/02; B81B2201/0228; B81B2201/0235; B81C2201/00; B81C2201/01; B81C2201/0101; B81C2201/0111; B81C2201/0114; G01P2015/0805; G01P2015/0822; G01P2015/0825; G01P2015/0828
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
222 words
A method of fabricating a semiconductor acceleration sensor comprising the steps of: providing a silicon wafer having laminated structure of a first substrate of a first conductivity type silicon and a second substrate of a second conductivity type silicon, said second substrate being provided on a front surface of said first substrate and having a thickness of two or more times a desired thickness of a beam part; forming a first mask for forming a supporting part and a weight part on a rear surface of said first substrate, said beam part being connected to said supporting part and said weight part; removing a portion of said first substrate between said supporting part and said weight part by applying an electrochemical etching to said rear surface of said first substrate via said first mask; stopping the removing step at the interface of said first substrate and said second substrate; providing an opening in said first mask for etching a gap part; forming a second mask for etching said gap part away from said beam part on a front surface of said second substrate in a region between said supporting part and said weight part; and opening said gap part by carrying out an etching from a rear surface and said front surface of said wafer via said first and second masks, respectively.
Claim 2
Independent Claim
222 words
A method of fabricating a semiconductor acceleration sensor comprising the steps of: providing a silicon wafer having laminated structure of a first substrate of a first conductivity type silicon and a second substrate of a second conductivity type silicon, said second substrate being provided on a front surface of said first substrate and having a thickness of two or more times a desired thickness of a beam part; forming a first mask for forming a supporting part and a weight part on a rear surface of said first substrate, said beam part being connected to said supporting part and said weight part; removing a portion of said first substrate between said supporting part and said weight part by applying an electrochemical etching to said rear surface of said first substrate via said first mask; stopping the removing step at the interface of said first substrate and said second substrate; providing an opening in said first mask for etching a gap part; forming a second mask for etching said gap part away from said beam part on a front surface of said second substrate in a region between said supporting part and said weight part; and opening said gap part by carrying out an etching from a rear surface and said front surface of said wafer via said first and second masks, respectively.
Claim 3
Independent Claim
263 words
A method of fabricating a semiconductor acceleration sensor comprising the steps of: providing a silicon wafer having laminated structure of a first substrate of a first conductivity type silicon and a second substrate of a second conductivity type silicon, said second substrate being provided on a front surface of said first substrate and having a thickness of two or more times a desired thickness of a beam part; forming a first mask for forming a supporting part, a weight part and etching end detector region on a rear surface of said first substrate, said beam part being connected to said supporting part and said weight part; removing a portion of said first substrate between said supporting part and said weight part and a portion of said first substrate corresponding to said detector region by applying an electrochemical etching to said rear surface of said first substrate via said first mask; stopping the removing step at the interface of said first substrate and said second substrate; providing openings in said first mask for etching a gap part and a V-shaped groove; forming a second mask for etching said V-shaped groove and said gap part away from said beam part on a front surface of said second substrate in a region between said supporting part and said weight part; opening said gap part and said V-shaped groove by carrying out a second etching from a rear surface and said front surface of said wafer via said first and second masks, respectively; and stopping said second etching by detecting that said V-shaped groove is opened through.
Claim 4
Independent Claim
263 words
A method of fabricating a semiconductor acceleration sensor comprising the steps of: providing a silicon wafer having laminated structure of a first substrate of a first conductivity type silicon and a second substrate of a second conductivity type silicon, said second substrate being provided on a front surface of said first substrate and having a thickness of two or more times a desired thickness of a beam part; forming a first mask for forming a supporting part, a weight part and etching end detector region on a rear surface of said first substrate, said beam part being connected to said supporting part and said weight part; removing a portion of said first substrate between said supporting part and said weight part and a portion of said first substrate corresponding to said detector region by applying an electrochemical etching to said rear surface of said first substrate via said first mask; stopping the removing step at the interface of said first substrate and said second substrate; providing openings in said first mask for etching a gap part and a V-shaped groove; forming a second mask for etching said V-shaped groove and said gap part away from said beam part on a front surface of said second substrate in a region between said supporting part and said weight part; opening said gap part and said V-shaped groove by carrying out a second etching from a rear surface and said front surface of said wafer via said first and second masks, respectively; and stopping said second etching by detecting that said V-shaped groove is opened through.
Claim 5
Dependent Claim
51 words
A method of fabricating a semiconductor acceleration sensor according to claim 2, wherein said second mask has a first opening window for said V-shaped groove and a second opening window for said gap part, and a width of said second opening window is larger than that of said first opening window.
Claim 6
Dependent Claim
24 words
A method of fabricating a semiconductor acceleration sensor according to claim 2, wherein said detecting means comprises a light source and an optical sensor.
Claim 7
Dependent Claim
23 words
A method of fabricating a semiconductor acceleration sensor according to claim 2, wherein each of said first and second substrates has (001) surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-05-12 | 2000-11-11 | 2001-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-05-12 | 2004-11-11 | 2005-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-05-12 | 2008-11-11 | 2009-05-13 | $7700.00 | Window Closed / Lapsed |